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Silicon micropillar electrodes of lithiumion batteries used for characterizing electrolyte additives 下载免费PDF全文
Fangrong Hu 《中国物理 B》2021,30(6):68202-068202
The <100> crystal-oriented silicon micropillar array platforms were prepared by microfabrication processes for the purpose of electrolyte additive identification. The silicon micropillar array platform was used for the study of fluorinated vinyl carbonate (FEC), vinyl ethylene carbonate (VEC), ethylene sulfite (ES), and vinyl carbonate (VC) electrolyte additives in the LiPF6 dissolved in a mixture of ethylene carbonate and diethyl carbonate electrolyte system using charge/discharge cycles, electrochemical impedance spectroscopy, cyclic voltammetry, scanning electron microscopy, and x-ray photoelectron spectroscopy. The results show that the silicon pillar morphology displays cross-shaped expansion after lithiation/delithiation, the inorganic lithium salt keeps the silicon pillar morphology intact, and the organic lithium salt content promotes a rougher silicon pillar surface. The presence of poly-(VC) components on the surface of FEC and VC electrodes allows the silicon pillar to accommodate greater volume expansion while remaining intact. This work provides a standard, fast, and effective test method for the performance analysis of electrolyte additives and provides guidance for the development of new electrolyte additives. 相似文献
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分析了影响金刚石膜热导率的主要因素,指出声子的散射是造成金刚石膜热导率降低的主要原因.采用光热偏转法实现了金刚石薄膜热导率的测试,测量误差小于5%,从减少杂质和晶界对导热声子的散射入手,研究了在不同的制备方法下碳源气体和金刚石膜内晶粒取向对其热导率的影响.结果表明在低碳源气体浓度下采用微波等离子体化学汽相沉积方法制备的具有较高程度(400)晶粒取向的金刚石薄膜具有高的热导率性质.优化的工艺条件制备出热导率为15.2W/(K·cm)左右的金刚石膜.
关键词: 相似文献
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Nd:YAG激光器切割金刚石膜的特性研究 总被引:2,自引:0,他引:2
采用Nd:YAG激光器对金刚石膜进行切割,研究了激光器在不同输出功率下切割金刚石膜的速率和切割深度与时间的关系,以及Nd:YAG激光器切割的金刚石膜在成份和形状上的变化特点,给出了比较理想的切割工艺条件。 相似文献
44.
Effects of N2 and glow discharge on growth behaviours of carbon nanotubes prepared by the hot filament chemical vapour deposition method 下载免费PDF全文
Carbon nanotubes (CNTs) are prepared by the hot filament chemical vapour deposition method using CH4 and H2 as reaction gases, and the growth behaviours are investigated by scanning electron microscopy and transmission electron microscopy. The results indicate that the CNTs prepared in the absence of N2 or glow discharge are bent; however, they are in an aligned state after introducing N2 into the chamber or forming glow discharge under a negative biased voltage. The results also indicate that the CNTs are of a bamboo-like structure when N2 is intruded as a reaction gas and the alignment degree of the CNTs grown under glow discharge is higher than that grown in N2. This illustrates that the nitric environment and glow discharge play important roles in the growth of CNTs. Combining with the theory related to alloy thermodynamics and collisions, we have analysed the growth mechanism of the CNTs in nitric environment and glow discharge. 相似文献
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By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si (100) substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied. 相似文献
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采用等离子体增强热灯丝化学气相沉积方法,以甲烷和氢气为反应气体,在钨丝衬底上制备出准直的碳纳米纤维(CNFs),其生长密度小于10.6cm-2,长度为6—30μm,直径为60—100nm.并采用自制的双探针扫描电子显微镜系统,对所生长的单根CNF作了场发射特性研究.结果表明,其场发射开启电压约为5V/μm,相应的发射电流达到20μA/cm2,同时,对不同长度的CNFs及单根CNF不同位置的场发射研究表明,场发射电流的大小不仅与材料本身的功函数、外电场场强、材料的微观结构以及宏观的几何结构有关,而且电子在输运过程中所受到的散射也是决定场发射电流大小的关键因素.
关键词:
碳纳米纤维
化学气相沉积
场发射
扫描电子显微镜 相似文献
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本文介绍一种为某专用雷达设计制作的工作于L波段的高温超导窄带带通滤波器.该滤波器为10阶微带谐振器级联(CQ)滤波器,引入两个交叉偶合构成一对传输零点形成准椭圆函数传输特性来增加带外陡度.为减小非近临谐振器间寄生耦合对滤波器传输特性的影响,对所采用的谐振器结构进行了精心选择.整个滤波器制作在一块2英寸的MgO衬底YBCO片上,封装后滤波器的整体尺寸为60mm×30mm×18mm.滤波器带宽为5MHz(FBW小于0.4%).实测滤波器带边陡度超过100dB/MHz,在中心频率(3MHz以外频域抑制好于-60dB,滤波器宽带抑制好于-80dB,滤波器最小插损0.3dB. 相似文献
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