溶胶-凝胶法制备LaNiO3薄膜及其电学性能研究

采用溶胶-凝胶法在SiO2/Si衬底上制备了LaNiO3薄膜,并通过改变退火温度和薄膜厚度对其微结构和电学性能进行了表征测试.X射线衍射(XRD)和电阻率测试结果表明,随着退火温度和厚度的增加,LaNiO3薄膜的结晶质量明显提高,薄膜电阻率也逐渐下降.当退火温度为800℃时,厚度为630 nm的LaNiO3薄膜电阻率最小,达到了1.37 mQ·cm.此外,利用LaNiO3薄膜作为下电极制备的2; Nb-Pb(Zr06Ti0.4)O3薄膜呈良好的钙钛矿相结构,且经过1010铁电循环测试周期以后,2; Nb-Pb(Zr06Ti0.4)O3薄膜的铁电性能未出现明显下降,表明该LaNiO3薄膜是生长PNZT铁电薄膜的优良下电极材料.     

LD泵浦Nd∶GdVO4晶体Cr4+∶YAG被动调Q激光特性研究

考虑腔内光子数密度的空间高斯分布以及晶体热效应的影响,给出了LD泵浦Nd∶GdVO4晶体Cr4+∶YAG被动调Q 1.06 μm激光的耦合速率方程组.数值求解该方程组获得了输出激光的脉冲宽度、重复率、峰值功率以及单脉冲能量随泵浦功率的变化特性,其理论值与实验结果相符.     

工程结构支撑条件优化设计

提出了一种将结构支撑位置和支撑类型作为设计变量的优化设计方法,就支撑条件改变对结构受力的影响进行了分析,论述了如何在遗传算法中实现结构支撑位置和支撑类型的优化．并通过数值算例说明了结构支撑条件的转变对结构的影响,证明结构支撑条件的优化处理对提高结构性能是有效的．     

大孔吸附树脂对款冬花总黄酮的吸附分离特性

选择6种大孔吸附树脂,比较其对款冬花总黄酮的吸附量,解吸率及吸附动力学特性,筛选出较优的款冬花黄酮吸附树脂.结果表明：在静态吸附和动态吸附实验中均以SP825具有较优的吸附和解吸效果.     

CPM网络中机动时间的使用效率及应用

本文研究CPM网络计划中总时差和单时差的使用效率问题及在项目管理中的应用.文章首先探讨了总时差和自由时差的使用对CPM网络中新关键路线形成的影响,得出结论:一般情况下一条路线上各工序分别使用自由时差的方式比某个工序使用总时差的方式具有更高的使用效率.文章随后对这一结论进行了科学性证明,并根据这个结论提出了项目管理中一种运用自由时差节约成本的方法,这种方法能帮助项目管理者提高机动时间使用效率.     

Structure and Stability of Endohedral Complexes X@（HBNH）12

Using quantum chemistry methods B3LYP/6-31＋＋G（d,p） to optimize endohedral complexes X@（HBNH）12 （X=Li^0/＋, Na^0/＋, K^0/＋, Be^0/2＋, Mg^0/2＋, Ca^0/2＋, H and He）, the geometries with the lowest energy were achieved. Inclusion energy, standard equilibrium constant, natural charge, spin density, ionization potentials, and HOMO-LUMO energy gap were also discussed. The calculation predicted that X=Na^0/＋, K^0/＋, Mg^0/2＋, Ca^0/2＋, H and He are nearly located at the center of （HBNH）12 cluster. Li^＋ lies in less than 0.021 nm departure from the center. Li and Be^0/2＋ dramatically deviate from the center. （HBNH）12 prefers to enclose Li^＋, Be^2＋, Mg^2＋, and Ca^2＋ in it than others. Moreover, M@（HBNH）12 （M=Li, Na, K） species are ＂superalkalis＂ in that they possess lower first ionization potentials than the Cs atom （3.9 eV）.     

手性有机酸薄层色谱保留指数的拓扑模型

基于Kier的分子连接性指数及邻接矩阵提出新型分子连接性指数（^mG_t^v）;引入手性指数（w_j）并建立了手性连接性指数（^mG_t^v）：^mG_t^v=^mG_t^v×w_j。^mG_t^v适用于手性分子、非手性分子及内消旋异构体的结构差异表征。用多元统计回归研究18种手性羟酸和氨基酸的薄层色谱保留指数（R_M）与^mG_t^v的定量构效关系,经最佳变量子集回归建立其四元数学模型,传统的判定系数（R²）为0.973,逐一剔除法（leave-one-out,LOO）的交互验证系数（Q²）为0.950,结果证明具有良好的稳健性及预测能力。根据进入该模型的4个手性连接性指数（⁰C_p^v、²C_p^v、C_ch^v、⁵C_p^v）可知,影响手性有机酸保留指数的主要因素是分子的二维结构特征和分子的手性特征以及柔韧性、折叠程度等三维结构因素。从上可见,新建手性连接性指数对手性有机酸的保留指数表征具有合理性与有效性,为预测手性有机酸的保留指数提供了一种有效方法。     

Projective synchronization of hyperchaotic system via periodically intermittent control

We further study the projective synchronization of a new hyperchaotic system. Different from the most existing methods, intermittent control is applied to chaotic synchronization in the present paper. We formulate the intermittent control system that governs the dynamics of the projective synchronization error, then derive the sufficient conditions for the exponential stability of intermittent control system by using Lyapunov stability theory, and finally establish the periodically intermittent controller according to the stability criterion by which the projective synchronization is expected to be achieved. The analytical results are also demonstrated by several numerical simulations.     

Regulation of Zn/Sn ratio in kesterite absorbers to boost 10% efficiency of Cu_2ZnSn(S,Se)_4 solar cells

The Zn/Sn ratio in Cu_2ZnSn(S,Se)_4(CZTSSe)films has been regulated to control the composition-related phase,defect,and photoelectric properties for high performance kesterite solar cells.It is found that the increase in the Zn/Sn ratio can slightly narrow the energy band gap to extend the light absorption range and improve the photocurrent.Optimal Zn/Sn ratio of 1.39 in CZTSSe film is obtained with the least secondary phase,the lowest defect density,and the longest charge recombination lifetime.Up to 10.1%photoelectric conversion efficiency has been achieved by this composition regulation.     

Band structure of silicon and germanium thin films based on first principles

In nanomaterials, optical anisotropies reveal a fundamental relationship between structural and optical properties, in which directional optical properties can be exploited to enhance the performance of optoelectronic devices. First principles calculation based on density functional theory(DFT) with the generalized gradient approximation(GGA) are carried out to investigate the energy band gap structure on silicon(Si) and germanium(Ge) nanofilms. Simulation results show that the band gaps in Si(100) and Ge(111) nanofilms become the direct-gap structure in the thickness range less than 7.64 nm and7.25 nm respectively, but the band gaps of Si(111) and Ge(110) nanofilms still keep in an indirect-gap structure and are independent on film thickness, and the band gaps of Si(110) and Ge(100) nanofilms could be transferred into the direct-gap structure in nanofilms with smaller thickness. It is amazing that the band gaps of Si~((1-x)/2)Ge~xSi~((1-x)/2)sandwich structure become the direct-gap structure in a certain area whether(111) or(100) surface. The band structure change of Si and Ge thin films in three orientations is not the same and the physical mechanism is very interesting, where the changes of the band gaps on the Si and Ge nanofilms follow the quantum confinement effects.