3D-QSAR Study on Apicidin Inhibit Histone Deacetylase

For Histone Deacetylase (HDAC) Inhibitor, four 3D-QSAR models for four types of different activities, were constructed.The cross-valldated q^2 value of CoMFA Model 1 is 0.624 and the noncross-validated r2 value is 0.939. The cross-validated q^2 value of Model 2 for training set is 0.652 and the noncross-validated r^2 value is 0.963. The cross-validated q^2 value for Model 3 is 0.713, with noncross-validated r^2 value 0.947. The crossvalidated q2 value for Model 4 is 0.566 with noncross-validated r^2 value 0.959. Their predicted abilities were validated by different test sets which did not include in training set. Then the relationship between substituents and activities was analyzed by using these models and the main influence elements in different positions (positions 8 and 14) were found. The polar donor electron group of position 8 could increase the activity of inhibition of HDAC, because it could form chelation with the catalytic Zn. Suitable bulk and positive groups at position 14 are favorable to anti-HDAC activity. These models could web interpret the relationship between inhibition activity and apicidin structure affording us important information for structurebased drug design.     

把握珠算教育工作的特点 提高珠算教育的整体功能和效果

从八十年代起,我国各类学校的珠算教育工作已进入一个全新的阶段,其特征表现为: (1)指导思想具体明确。从观念上讲,弘扬中华民族精神,培养学生严肃、认真、团结、向上的学习心理品质。从知识与技能上讲,珠算教育以计算运用为目的,以开发智力为目标,提倡珠脑结合,全面提高青少年身心健康。     

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.     

钴铁氧体/膨胀石墨及其聚吡咯复合物的制备和油水分离性能

用化学共沉淀法和原位乳液聚合法分别制备了钴铁氧体/膨胀石墨复合微粒(CF/EG)和钴铁氧体/膨胀石墨/聚吡咯复合物(CF/EG/PPy)。用现代分析技术表征了样品的组成、结构、形貌、电-磁性能和油水分离性能。结果表明,CF粒子已填嵌入到膨胀石墨的层间,CF/EG/PPy复合物的核(CF/EG)和壳(PPy)之间存在着一定的相互作用,样品的油水分离效果与膨胀石墨的层间空隙成正比,其次序为:EG>CF/EG>CF/EG/PPy。磁性的CF/EG微粒回收容易,重复使用性能优良,循环5次的效率不低于90%。