半导体激光器脉冲调制理论分析

本文用龙格-库塔法求解高斯脉冲调制下半导体激光器速率方程,对结果进行了分析。推出了较高偏置直流和高斯脉冲调制下计算激光脉冲延迟时间、脉冲宽度和最大调制码率的公式。给出了调制畸变的实验结果。     

致密微孔壁绝热冷却效果研究

本文采用经热电偶标定的红外热像表面温度测量技术,实验研究了吹风比M(M=0．30-1．59)对致密微孔壁热侧壁面上绝热冷却效果ηaw的影响,并与数值模拟结果进行了比较。实验与数值模拟的结果都表明:与常规气膜冷却在M≥1．0时ηaw随着M增大而减小的现象不同,致密微孔壁的ηaw随着M增大逐渐增加的,但随着M的增大,ηaw增加的幅度越来越小。在相同的吹风比M下,致密微孔壁的绝热冷却效果ηaw明显高于常规气膜冷却的ηaw。     

光致折射晶体中高速调制光束传输和放大的理论研究

本文首次对高速调制光束在先致折射晶体中的耦合进行了理论研究,指出利用光致折射晶体中的双光束耦合可以实现高速调制光束的信息转换和放大,并为实验所证实.     

间硝基苯甲酸稀土配合物的热分解

用TG-DTA,高温X-射线衍射研究了稀土间硝基苯甲酸配合物LnL_3·nH_2O(n=2,Ln=La→Lu+Y;n=0,Ln=Sc,HL=间硝基苯甲酸)的热分解行为,DSC测定其脱水相变过程中的热力学函数,同时用透射电镜观察了热分解产物的超微性。     

互泵浦相位共轭器的阈值耦合强度的分析

从理论上计算具有两个作用区的互泵浦相位区轭器的阈值耦合强度（γＬ）ｔｈ，给出了（γＬ）ｔｈ与输入光强比ｑ、光折变晶体内部通道强度传输系数Ｔｔ的规律。     

Four-State Model for Three-Branch Molecule＇s Two-Photon Absorption Properties

We present a four-state model for calculating the two-photon absorption of multi-branched molecules by using the time-depended function method, The numerical results indicate that the two-photon absorption cross section has a strong enhancement for three-branch molecules compared to two-branch structures, The maximal two-photon-absorption cross section is 2.358 × 10^-47 cm^4s/photon, At the same time, the charge-transfer process for the charge-transfer states is visualized in order to explain mechanism about the maximal TPA cross section.     

Preparation of Cu（In,Ga）Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere

Cu（In, Ga）Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10 Pa. The in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250℃, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu（In,Ga）Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560℃. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu（In, Ga）Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.     

激光干涉法测压电陶瓷的压电常数d31

介绍迈克尔逊干涉仪原理在测微小位移中的应用。确定一种锆钛酸铅镧压电陶瓷的压电常数ｄ３１，得到了一种测ｄ３１的可行可靠的新方法。