低温沉积Ag-Cu薄膜的耐原子氧和摩擦学性能

采用多弧离子镀在低温(173 K)沉积了Ag-Cu薄膜,通过地面原子氧模拟试验机构考察了薄膜的耐原子氧性能,通过X射线衍射(XRD)、原子力显微镜(AFM)和球-盘摩擦试验机对薄膜结构、耐原子氧性能和摩擦学性能进行了表征,并与室温(300 K)及低温(173 K)沉积Ag薄膜进行了比较研究.结果表明:低温沉积Ag-Cu薄膜由面心立方结构的AgCu合金相和少量Ag或Cu组成,Cu元素合金和低温沉积可细化Ag薄膜的晶畴尺寸、提高其致密性,细密的薄膜结构有利于抑制原子氧对薄膜的攻击,因此低温沉积的Ag-Cu薄膜表现出较好的耐原子氧性能;磨损试验结果表明低温沉积的Ag-Cu薄膜表现出较好的耐磨性,这主要归因于其细密的薄膜结构和较高的膜-基结合强度,此外由于其耐原子氧性能的改善,低温沉积Ag-Cu薄膜在原子氧辐照前后磨损率的增加明显低于低温和室温沉积Ag薄膜.     

反相高效液相色谱法分离重组促红细胞生成素

利用反相高效液相色谱法对重组促红细胞生成素进行了纯化。结果表明,利用Ｃ４反相柱和乙腈－三氟乙酸流动相在洗脱梯度和上样样品纯度等条件都较适当时,可以简单、快速、高效地从粗品中分离出重组促红细胞生成素,获得的产品纯度高,接近１００％;比活性好,约为１．９６×１０８ＩＵ／ｇ蛋白。     

Synthesis and room-temperature NO_2 gas sensing properties of a WO_3 nanowires/porous silicon hybrid structure

We report on the fabrication and performance of a room-temperature NO2 gas sensor based on a WO3 nanowires/porous silicon hybrid structure. The W18O49 nanowires are synthesized directly from a sputtered tungsten film on a porous silicon （PS） layer under heating in an argon atmosphere. After a carefully controlled annealing treatment, WO3 nanowires are obtained on the PS layer without losing the morphology. The morphology, phase structure, and crystallinity of the nanowires are investigated by using field emission scanning electron microscopy （FESEM）, X-ray diffractometer （XRD）, and high-resolution transmission electron microscopy （HRTEM）. Comparative gas sensing results indicate that the sensor based on the WO3 nanowires exhibits a much higher sensitivity than that based on the PS and pure WO3 nanowires in detecting NO2 gas at room temperature. The mechanism of the WO3 nanowires/PS hybrid structure in the NO2 sensing is explained in detail.     

基体偏压对反应磁控溅射ZrN/α-SiNx纳米多层薄膜结构及性能的影响

采用中频磁控溅射技术在3种偏压条件下(0、-80、-300V)于AISI 440C钢及单晶Si(100)基体表面制备了ZrN/α-SiNx纳米多层薄膜.通过高分辨透射电子显微镜(HRTEM)分析表征了各纳米多层薄膜微观组织结构,并通过纳米压入仪与真空球-盘摩擦试验机分别测试了各薄膜力学及真空摩擦学性能.重点研究了基体偏压对ZrN/α-SiNx纳米多层薄膜微观组织结构,进而对其力学及摩擦学性能的影响机制.结果表明:较低的基体偏压会导致纳米多层薄膜中ZrN层差的结晶状态,而较高的基体偏压则易于引起ZrN层与SiNx层层间界面的交混.上述两种薄膜组织及结构的变化均不利于该纳米多层薄膜力学及摩擦学性能的改善.在适宜的偏压条件下(-80 V),ZrN/d-SiNx薄膜呈现出具备良好层间界面的晶体/非晶体纳米多层结构,与其他偏压条件制备的纳米多层薄膜相比,该薄膜表现出更好的力学及摩擦学性能.     

A new direct band gap silicon allotrope o-Si32

Silicon is a preferred material in solar cells, and most of silicon allotropes have an indirect band gap. Therefore, it is important to find new direct band gap silicon. In the present work, a new direct band gap silicon allotrope of o-Si32 is discovered. The elastic constants, elastic anisotropy, phonon spectra, and electronic structure of o-Si32 are obtained using first-principles calculations. The results show that o-Si32 is mechanically and dynamically stable and is a direct semiconductor material with a band gap of 1.261 eV.     

First principles study of stability,mechanical, and electronic properties of chromium silicides

Through the first principles calculations, the chemical stability, mechanical, and electronic properties of chromium silicides are predicted. Estimating enthalpies and binding energies, density state density and electron density distribution are combined to analyse the thermodynamic stability and physical properties of chrome-silicon binary compounds. The chromium silicide includes Cr_3 Si, Cr_5 Si_3, CrSi, and CrSi_2. The chemical stability and the information about electronic structure, mechanical properties, Debye temperature, and anisotropy properties are obtained by density functional theory and Debye quasi-harmonic approximation. Meanwhile, the calculation of elastic modulus shows that Cr_3 Si has the highest body modulus value(251 GPa) and CrSi_2 possesses the highest shear modulus(169.5 GPa) and Young's modulus(394.9 GPa). In addition, the Debye temperature and the speed of sound of these Cr–Si compounds are also calculated.Since the calculated bulk modulus is different from Young's modulus anisotropy index, and also different from Young's modulus of a three-dimensional surface shape, the different mechanical anisotropies of all the compounds are obtained.     

磁控直流辉光等离子体放电特性

本文利用单探针诊断等离子体参数来研究自行设计的磁控直流辉光等离子体实验装置的放电特性, 从而得出电子密度与气体压强、电子密度分布与磁场位型以及磁场强度等的关系. 另外, 用有限元的方法对线圈通电产生的磁场进行数值计算, 模拟出不同接线方式的两种磁场位型分布. 通过实验得出这两种不同的位型的磁场均对等离子体的状态有一定的“控制”作用, 而且这种“控制”作用与现有理论相符合.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

The light-enhanced NO2 sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.     

2,2'-联吡啶-3,3',6,6'-四羧酸过渡金属配合物的合成、结构及性质

以2,2'-联吡啶-3,3',6,6'-四羧酸(H₄bptc)为配体,通过水热合成的方法与过渡金属盐合成了3个配合物,其分子式分别为[Co₂(H₂bptc)₂(H₂O)₄]·bpe·9H₂O(1),[Ni₂(H₂bptc)₂(H₂O)₄]·bpe·9H₂O(2),[Ni₂(H₂bptc)₂(H₂O)₄]·0.5bpp·7H₂O(3)(bpe=1,2-二(4-吡啶基)乙烯,bpp=1,2-二(4-吡啶基)乙烷)。用红外光谱,X-射线单晶衍射对化合物的晶体结构进行了表征,并对这3个配合物的热稳定性进行了测试。化合物1~3为单核结构的配合物,它们均通过分子间氢键形成三维超分子结构。