电子束诱导单壁碳纳米管不稳定的新观察

利用透射电镜在室温下对不同形态的单壁碳纳米管进行了原位电子束辐照研究.研究发现:在相同的辐照条件下随着辐照时间(或辐照剂量)的增加,两端固定的单壁碳纳米管径向收缩,且收缩速率越来越快;相同直径的轴向弯曲的单壁碳纳米管比平直的单壁碳纳米管更加不稳定;一端固定另端自由的单壁碳纳米管轴向收缩,但其直径基本不变.利用单壁碳纳米管纳米曲率效应和能量束诱导非热激活效应,对上述单壁碳纳米管不稳定性现象进行了新的、合理的解释.     

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.