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We reported a passive Q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. 相似文献
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Stable continuous-wave passive mode-locking of diode-end-pumped Nd:GdVO4 and Nd:YAG lasers with semiconductor saturable absorber mirrors (SESAMs) are reported. The comparative study shows that the Nd:GdVO4 crystal is efficient to decrease the Q-switched mode-locking tendency, and easier to continuous-wave (CW) mode lock than Nd:YAG. 相似文献
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A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated. The measured pulse duration is 1.98 ps at the wavelength of 1044 nm. The maximum average power reaches 45 mW. 相似文献
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We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semiinsulating GaAs wafer. The wafer was implanted with 400-kev As+ in the concentration of 1016 ions/cm2.To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 ℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films,respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse. 相似文献
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