双包层光纤激光器微棱镜反射式侧面耦合的新技术

提出了一种双包层光纤激光器侧面耦合技术--微棱镜反射式侧面耦合技术,能高效且方便地将半导体激光器,特别是高功率半导体激光器阵列和叠层的抽运光耦合进双包层光纤中.该技术具有结构简单、加工难度小,抽运效率高、对光纤本身无损伤等特点,更重要的是该技术非常适合半导体激光器列阵的多点抽运.详细阐述了微棱镜反射式耦合技术的基本原理和具体使用方法,理论计算所得耦合效率超过90%,并进行了初步的实验研究,得到了超过50%的耦合效率.通过分析,对光源和棱镜具体尺寸参数提出了具体要求,并指出了其应用范围.     

中间镜式半导体可饱和吸收镜在Nd∶YVO4激光器中被动调Q特性研究

利用一种新型的中间镜式半导体可饱和吸收镜,成功实现了二极管泵浦Nd∶YVO4激光器调Q运转,获得的最短脉冲宽度为8.3 ns,最大平均输出功率为135 mW,重复频率在400 KHz到2 MHz之间.利用这种吸收体被动调Q得到的重复频率大大高于所知的大多数吸收体所进行的被动调Q的重复频率.     

Reflective graphene oxide absorber for passively mode-locked laser operating at nearly 1μm

A low cost and simply fabricated reflective graphene oxide is successfully made. By using this absorber, as well as an end reflector, we obtain a passively mode-locked Yb:LuYSiO5 laser operating at nearly 1 μm. When the pump power is increased up to 5.73 W, stable mode locking is achieved. The central wavelength of the laser spectrum is 1043.2 nm with a pulse duration of 5.0 ps. When the pump power reaches 8.16 W, dual-wavelength mode locking laser pulses at 1036.3 nm and 1043.5 nm are simultaneously detected.     

A Passively Mode－Locked Diode－End－Pumped Nd：YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

We report the experimentM results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductorsaturable absorber mirror (SESAM) from which we achieved a lOps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature. The recovery time wasmeasured to be 0.5 ps, indicating the potential pulse compression to sub-picoseconds.     

激光驱动冲击波的增长与衰减的一维特征线解法

 本文提出一种计算激光产生冲击波的增长与衰减规律的简单方法。用该方法计算了梯形激光脉冲和高斯型脉冲在铝靶中产生冲击波的增长与衰减的情况，并与其他作者所给的结果进行了比较。     

基于WS2可饱和吸收体的脉冲激光器研究

利用WS₂的可饱和吸收特性,在激光二极管侧面抽运Nd:YAG固体激光器Z型腔结构中分别实现了被动调Q和被动调Q锁模运转。实验表明:当泵浦电流为9.5 A时,开始启动调Q运转,当泵浦电流大于9.8 A时,调Q激光脉冲趋于稳定。当泵浦电流为12.8 A时,被动调Q输出的最大平均功率为466 mW,最窄脉冲宽度为3.205 μs,对应的重复频率为71.70 kHz,此时最大单脉冲能量为6.5 μJ。当泵浦电流达到13.4 A时,激光器实现调Q锁模运转。调Q锁模的最高输出功率为590 mW,调Q包络频率为71.98 kHz,单个调Q包络内的脉冲串重复频率123.1 MHz,每个调Q包络中包含369个脉冲,单脉冲能量为22.2 nJ。结果表明WS₂材料可以作为可饱和吸收体用于固体激光器中。     

Flash-lamp-pumped picosecond Nd:YAG regenerative amplifier

A flasli-lamp-pumped Nd:YAG regenerative amplifier has been developed at 1.06 μm, seeded with 10-ps pulses from a diode-end-pumped and mode-locked Nd:YAG oscillator with homemade semiconductor saturable absorber mirror (SESAM). The pulse energy was amplified to 2 mJ by the regenerative amplifier at 10-Hz repetition rate. In two-stages amplifier the regenerative amplified pulse energy was amplified to 100 mJ, and 35-mJ double frequency at 532 nm was obtained by extra-cavity double frequency with a KTP crystal.     

高温超导体的电子比热研究

在vanHove奇异性背景下,从BardeenGooperSchrieffer超导理论和二维紧束缚能带结构出发,推导了各向异性的d波序参量方程和d波的电子比热公式,并研究了在临界温度Tc处的电子比热跃变和低温下电子比热的温度行为及掺杂关系.得出了考虑到vanHove奇异性可以提高Tc处的比热跃变以及d波低温电子比热与温度的平方成线性关系的结论. 关键词：     

新型光泵浦垂直外腔面发射半导体激光器

用量子阱技术生长的半导体材料作激光增益介质,AlGaAs/GaAs对做布喇格反射镜,并以简单的平凹腔做谐振腔,半导体激光器作泵浦源,制作出了光泵垂直外腔面发射半导体激光器.在抽运功率1.5 W时,得到了中心波长1005 nm、最大输出功率40 mW的激光,光－光转换效率2.7%.     

用半导体可饱和吸收镜进行LD泵浦Yb∶YAG激光器被动锁模研究

采用不同的半导体可饱和吸收镜,实现了940nm半导体直接泵浦Yb∶YAG激光器被动锁模,得到了输出中心波长分别在1030nm和1050nm,光谱半宽(FWHM)分别为1nm和2nm的稳定锁模脉冲序列,其重复频率分别为190. 24MHz和178. 6MHz 泵浦光为4W时,两种波长的平均输出功率分别为80mW和60mW。