用半导体可饱和吸收镜进行LD泵浦Yb∶YAG 激光器被动锁模研究

采用不同的半导体可饱和吸收镜, 实现了940 nm半导体直接泵浦Yb∶YAG激光器被动锁模, 得到了输出中心波长分别在1030 nm和1050 nm, 光谱半宽（FWHM）分别为1 nm和2 nm的稳定锁模脉冲序列, 其重复频率分别为190.24 MHz和178.6 MHz. 泵浦光为4W时, 两种波长的平均输出功率分别为80 mW和60 mW.     

Stable mode-locking in an Yb:YAG laser with a fast SESAM

Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor sat-urable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.     

离子注入SI—GaAs做激光器被动调Q元件的研究

本文从半导体材料GaAs的能级结构出发，探讨了GaAs做固体激光器被动调Q器件的可行性，对离子注入半绝缘GaAs用做Nd：YAG激光器中被动调Q元件的机理进行了实验研究，实验中腔型选择直腔式平平腔，Nd：YAG采用脉冲氙灯抽运，在腔型1Hz下获得了单脉冲宽度为62ns的调Q波形输出。     

High-power passively Q-switched Nd:GdVO_4 laser with a reflective graphene oxide saturable absorber

A single output Q-switched Nd:GdVO4 laser with a reflective graphene oxide(GO) saturable absorber was demonstrated. The shortest pulse duration in the Q-switched laser is 115 ns, and the output power ranges from1.23 W at 1.71 MHz to 2.11 W at 2.50 MHz when the pump power rises from 7.40 to 10.90 W with the utilization of GO Langmuir–Blodgett(LB) films based on the convenient and low-cost LB technique. To the best of our knowledge, it is the highest output power in a Q-switched laser with a GO saturable absorber.     

Passive mode locking of an Yb:YAB laser with a low modulation depth SESAM

A passive mode-locked diode-pumped self-frequency-doubling Yb:YAB laser with a low modulation depth semiconductor saturable absorber mirror operating at 374 MHz is demonstrated.The measured pulse duration is 1.98 ps at the wavelength of 1044 nm.The maximum average power reaches 45 mW.     

Diode-pumped 1123-nm Nd:YAG laser

We demonstrated a diode-pumped Nd:YAG laser with a plano-concave resonator. When the pump power is 1.57 W, the output power of 1123-nm laser is 132 mW at the temperature of 20 ℃, and the power change is less than 2% in an hour. A periodically poled LiNbO3 (PPLN) was used as outer cavity frequency-doubling crystal and 561-nm laser was observed.     

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM). and the pulse repetition rate is 83 MHz.     

低温GaAs被动调Q锁模Nd:Gd0.42 Y0.58VO4 混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:Gd0.42Y0.58VO4混晶激光器的调Q锁模运转.研究了Nd:Gd0.42Y0.588VO4激光器的基频运转特性.在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光-光转换效率为43.9%.并测量了Nd:Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性.实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光-光转换效率为15.7%.     

周期极化铌酸锂制作与应用

详细介绍了一种波长转换效率很高的周期极化铌酸锂(PPLN)的原理、制作及应用。周期极化铌酸锂以其有效非线性系数大于常用块状晶体一个数量级的特点得到迅速发展，PPLN可通过外加电场极化法、质子交换法等方法制备。近年来其制备工艺和光光转化效率有了很大的提高。周期极化铌酸锂可用于固体激光倍频。半导体激光直接倍频光参量振荡和放大等方面。使用PPLN与否。很大程度上已经成为传统非线性激光光源能否继续发展的决定性因素。     

Contrastive study of two SESAMs for passive mode-locking in Nd:YVO_4 laser with low pump power

Two semiconductor saturable absorber mirrors (SESAMs), of which one is coated with 50% reflection film on the top and the other is not, were contrastively studied in passively mode-locked solid-state lasers which were pumped by low output power laser diode (LD). Experiments have shown that reducing the modulation depth of SESAM by coating partial reflection film, whose reflectivity is higher than that between SESAM and air interface, is an effective method to get continuous wave (CW) mode-locking instead of Q-switched mode-locking (QML) in low power pumped solid-state lasers. A simple Nd:YVO4 laser pumped by low power LD, in which no water-cooling system was used, could obtain CW mode-locking by the 50% reflector coated SESAM with average output power of ~ 20 mW.