磷在P-ZSM-5沸石中存在的形态

用密度泛函理论和ONIOM (our own N-layer integrated molecular orbital molecular mechanics)方法研究磷改性的ZSM-5沸石中含磷基团的可能存在形态. 计算的反应焓和自由能数据表明P-ZSM-5沸石中以磷进入骨架和在骨架外的形成磷酸根离子对是合理的稳定结构. 而且, 计算结果表明离子对模型F和G更适合在室温下存在, 磷进入骨架的酸性结构C'在高温下更稳定, 而磷进入骨架的结构C对温度变化不敏感. 计算得到的²⁷Al, ³¹P, ²⁹Si化学位移、酸性的变化趋势和结构参数与相关实验数据吻合.     

离散余弦型线圈结构的二极场应用研究

介绍了粒子加速器中超导二极试验磁体中离散余弦型(DCT)超导线圈的电磁设计、线圈制作和验证测试过程。     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

侧链含炔丙基的PLGA-PEG-PLGA三嵌段共聚物的合成与表征

通过简单易行的技术路线合成了炔丙基化乙交酯单体,以1,4-二甲氨基吡啶为催化剂,亲水性和生物相容性良好的聚乙二醇为大分子引发剂,在较滥条件下引发炔丙基化乙交酯和丙交酯的开环共聚,制备了侧链含炔丙基的聚(乳酸-羟基乙酸)-聚乙二醇-聚(乳酸-羟基乙酸)(PLGA-PEG-PLGA)三嵌段共聚物,并对产物的组成与结构进行了表征.为生物孤犊触乳聚酯的分子修饰、生物相容性的提高探索一条简单而有效的途径     

二项式级数在收敛区间端点处的敛散性

给出了二项级数在收敛区间端点x =± 1处的收敛性判别法及证明 ,从而得到二项级数的收敛区间     

一种新型的地塞米松棕榈酸酯脂质体制剂及其对小鼠的抗炎作用研究

本文报道了一种新型的长循环脂质体地塞米松棕榈酸酯 (DPL long-circulating) 的药物运载系统。将磷脂和胆固醇通过薄膜分散-挤压法得到该DPL long-circulating。考察了该DPL long-circulating配方的稳定性。用老鼠实验来评价DPL long-circulating, DPL和DSP的抗炎活性与急毒性。应用薄膜分散-挤压的方法可以成功得到DPL long-circulating。实验结果表明DPL long-circulating有均匀的粒径和稳定的性质。在抗炎实验中,DPL long-circulating和DPL表现出比DSP更强的抗炎效果。急性毒性实验则表明DSP注射液与DPL long-circulating和DPL相比有较小的毒性,提示DPL long-circulating和DPL可能因为被动靶向作用从而提高了生物利用度。使用上述方法得到的DPL long-circulating满足了质量要求,并且有较高的抗炎活性及急毒性。     

大学化学双语教学设计初探

大学双语教学是高校教学改革新尝试,由于中西文化背景、教育体制等差异,给双语教学实施带来难度。本文以无机化学双语教学实践为例,分析双语教学产生的背景,反思双语教学存在的问题,提出大学化学双语教学重在教师参与,得在教学系统完善,贵在模式创新的实施途径。     

纳米稀土镧8-羟基喹啉间羟基苯甲酸/TiO2的红外及拉曼光谱研究

采用沉淀法/溶胶-凝胶复合方法制备了纳米稀土镧8-羟基喹啉间羟基苯甲酸/TiO2复合粒子。并应用红外和拉曼光谱对其进行了表征。红外光谱证明样品为稀土镧8-羟基喹啉间羟基苯甲酸/TiO2复合粒子。拉曼光谱证明其拉曼峰与文献报道的TiO2拉曼峰相比,部分峰位出现了蓝移,部分峰位出现了红移现象,从纳米粒子的表面结构及配合物层的压力出发对此现象进行了定性解释和讨论。     

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence(PL) of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.