排序方式: 共有57条查询结果,搜索用时 15 毫秒
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采用直流电弧等离子体技术成功制备了NiO纳米颗粒,并利用X射线衍射(XRD)、透射电子显微镜(TEM)和相应选区电子衍射(SAED)、傅里叶变换红外光谱(FTIR)、BET氮吸附等测试方法对样品的成分、形貌、晶体结构、比表面积、粒度分布、红外吸收性能进行表征分析.实验结果表明:直流电弧等离子体制备的NiO纳米颗粒为fcc结构的晶态,形貌呈规则的球形,粒度均匀,分散性良好,粒径范围在15~45 nm,平均粒径为25 nm,比表面积为33 m2/g.与普通块体NiO相比,红外吸收峰发生了红移. 相似文献
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1 物理中和谐统一性在物理学习过程中,很多同学都认为物理学定律多、公式多、内容抽象,难以理解和掌握.因此,往往公式和定律死记硬背、应用起来生搬硬套,学习不灵活,不能举一反三,也就出现了死读书现象.然而,物理学作为一门严谨的自然科学,也与其它学科一样是科学系统的一个子 相似文献
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Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates
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Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene(MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding 200 A·W-1is obtained, which enables most optoelectronic application. In addition, according to the analyses of the high photoresponsivity and long photoresponse time, we conclude that the working mechanism of the device is photoconductive effect. The process of photons conversion into conducting electrons is also described in detail. Finally, according to the distinct difference between the photoresponses at 1550 nm and 808 nm, we estimate that the position of the trapping energy is somewhere between 0.4 e V and 0.76 e V, higher than the Fermi energy of MLG. Our work paves a new way for fabricating the graphene photoconductive photodetectors. 相似文献
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采用射频磁控溅射方法在Si衬底上制备了不同掺杂量的La掺杂ZnO(ZnO∶La)薄膜.用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致荧光发光(PL)等表征技术,研究了不同掺杂量对ZnO∶ La薄膜的微观结构和光学特性的影响.结果表明,所有薄膜均只出现的(002)衍射峰,表明La3+可以替代ZB2或者进入ZnO晶格间隙,并未改变ZnO的六角纤锌矿结构.通过计算可知La掺杂可以抑制ZnO的晶粒增长.可见光范围的透过率超过80;,同时随着La掺杂量的增加,薄膜的光学带隙值逐渐增大.通过对光致发光谱的研究表明,La掺杂可以增强ZnO薄膜室温下的紫外光发光强度. 相似文献
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Top-illuminated metamorphic InGaAs p-i-n photodetectors (PDs) with 50% cut-off wavelength of 1.75 μm at room temperature are fabricated on GaAs substrates. The PDs are grown by a solid-source molecular beam epitaxy system. The large lattice mismatch strain is accommodated by growth of a linearly graded buffer layer to create a high quality virtual InP substrate indium content in the metamorphic buffer layer linearly changes from 2% to 60%. The dark current densities are typically 5 × 10^-6 A/cm^2 at 0 V bias and 2.24 × 10^-4 A/cm^2 at a reverse bias of 5 V. At a wavelength of 1.55 μm, the PDs have an optical responsivity of 0.48 A/W, a linear photoresponse up to 5 mW optical power at -4 V bias. The measured -3 dB bandwidth of a 32 μm diameter device is 7 GHz. This work proves that InGaAs buffer layers grown by solid source MBE are promising candidates for GaAs-based long wavelength devices. 相似文献