Compact Single-Stage Femtosecond Multipass Ti：Sapphire Amplifier at 1 kHz with High Beam Quality

A compact femtosecond Ti：sapphire amplifier system is reported using single-stage multipass configuration with high beam quality. A high dispersion glass stretcher and a pair of double prisms for compression are introduced based on broadband femtosecond seed pulses. The non-grating-based pulse stretcher and compressor are advantageous to increase high beam quality and to reduce the high-order dispersion. A Gaussian filter is used to reduce the gain narrowing effect in amplification. The compact femtosecond Ti：sapphire nine-pass amplifier delivers pulses with a duration of 26 fs and an energy of 800μJ at 7mJ pumping pulses energy at I kHz. The 1-kHz femtosecond amplifier with high beam quality and high stability is very suitable for ultrafast physics research applications, such as attosecond science, ultra-precision micromachining, and THz wave generation.     

碘化钠NaI(Tl)单晶闪烁探测器的应用

碘化钠NaI(Tl)单晶闪烁探测器由射线探测器、计算机多道、高压电源及线性放大器、计算机多道脉冲幅度分析器等部分组成。当放射源发出的γ射线进入闪烁体时,γ光子即与闪烁体中的原子、分子及晶体系统发生相互作用(如光电效应,康普顿散射和电子对效应等)。     

不同LET碳离子束辐照拟南芥干种子的当代损伤效应

本研究以拟南芥（Columbia野生型）干种子为材料,利用兰州重离子研究装置（HIRFL）产生的碳离子束对材料进行辐射处理,统计其存活率、根长、下胚轴长及每果荚种子数,以探讨不同传能线密度（Linear Energy Transfer,LET）的碳离子束辐照对拟南芥当代损伤效应的影响。结果表明,在相同LET辐射条件下,随着辐射剂量的增大,拟南芥的存活率、根长、下胚轴长度、每果荚种子数都呈现下降趋势。在相同剂量不同LET辐射处理情况下,随着LET的增大,存活率、根长、下胚轴长、每果荚种子数都显著下降,可见高LET辐射严重抑制了拟南芥的生长和发育。研究表明,当LET为50 keV/μm时,碳离子束辐射拟南芥干种子对应的最佳诱变剂量为200 Gy,为后续开展碳离子束辐射的诱变效率研究奠定了前期基础。Aimed to study the biological effects of carbon ion beams with different linear energy transfer (LET) values provided by Heavy Ion Research Facility in Lanzhou (HIRFL), dry seeds of Arabidopsis thaliana (Columbia-WT) were irradiated and a series of biological effects of postembryonic development, such as survival rate, primary root length, hypocotyls length and number of seeds per silique, were investigated. The results showed that, under the radiation condition of the same LET value, the survival rate, root length, hypocotyls length and number of seeds per silique were decreased with the increasing dose. In addition, under the radiation conditions with different LET values, but same dose, the extent of the decline of the survival rate, root length, hypocotyls length and number of seeds per silique were reinforced with the increasing LET. It was also found that high LET radiations inhibited the subsequent growth and development of Arabidopsis thaliana severely. In brief, it was suggested that the optimum dose of carbon ion beam with 50 keV/μm value on Arabidopsis thaliana dry seeds was 200 Gy. This research complemented the preliminary theoretical foundation for the comparative study of the highest mutation efficiency of carbon ion beam irradiations at IMP, CAS(Institute of Modern Physics, Chinese Academy of Sciences).     

Thermal entanglement and teleportation in a three-qubit Heisenberg XXZ model with Dzyaloshinski--Moriya anisotropic antisymmetric interaction

This paper investigates the thermal pairwise entanglement of a three-qubit Heisenberg XXZ chain in the presence of the Dzyaloshinski--Moriya (DM) anisotropic antisymmetric interaction and quantum teleportation when using the Heisenberg chain as a channel. The entanglement dependences on the DM interaction and temperature are given in detail. It obtains the relation between the concurrence and average fidelity, and shows that the same concurrence can lead different average fidelities. Moreover, it finds the thermally entangled states which do not violate the Bell inequalities, and can still be used for quantum teleportation.     

Realization of Toffoli gate operation using four-level atoms in cavity QED system

This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom--field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom--cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N-qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.     

重庆地区露天石刻早期封护材料老化产物及其影响研究

重庆市市委会办公大楼旧址前有一组露天存放的清代砂岩石狮子,表面覆盖着黑色硬壳状物质, 发生大面积脱落,起翘和卷曲。为了揭示黑色硬壳状结构组成,研究其形成过程及对文物产生的影响,利用环境扫描电子显微镜(SEM),X-射线衍射仪(XRD),X-射线荧光光谱仪(XRF),傅里叶变换红外光谱仪(FTIR)和X-射线光电子能谱(XPS)对黑色硬壳及文物表层砂岩样品进行了检测分析研究。结果发现：黑色硬壳断面Mapping元素分布图显示其分为底漆层,中间层和表层,系石刻早期封护层的老化产物;中间层含有立德粉(硫化锌和硫酸钡),黑色外观源于表层中含铅颜料(铅白)变色形成黑色硫化铅及树脂碳化所致;红外光谱与光电子能谱显示出黑色硬壳中含有强的羟基(-OH)特征峰,说明封护层中有机物老化后形成了大量羟基,从而增强了自身亲水性,造成易吸水溶胀与干燥收缩情况,导致大面积脱落,起翘和卷曲现象;黑色硬壳起翘和卷曲部位与下层石刻表面之间形成了易于积水的微空隙,能够聚集雨水中的有害物质,造成石刻表层岩石发生腐蚀,例如黑色硬壳背面及下层岩石表面中高含量硬石膏(CaSO₄),经生水化作用后转化为石膏(CaSO₄·2H₂O),发生体积膨胀造成岩石表面松动和酥粉。因此,当露天文物表面上封护层已老化时,及时地进行清除是十分必要的。     

Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors

The total ionizing dose(TID) response of 65-nm CMOS transistors is studied by 10-ke V x-ray and 3-Me V protons up to 1 Grad(SiO_2) total dose.The degradation levels induced by the two radiation sources are different to some extent.The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons.The holes' recombination also contributes to the difference.Compared to these two mechanisms,the influence of the dose rate is negligible.     

磁控溅射制备ZnO薄膜的结构及发光特性研究

采用射频反应磁控溅射法在玻璃衬底上制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射、扫描探针显微镜及荧光分光光度法研究了生长温度对ZnO薄膜微观结构及光致发光特性的影响。结果表明,合适的衬底温度有利于提高ZnO薄膜的结晶质量;在室温下测量样品的光致发光谱(PL),观察到波长位于400 nm左右的紫光、446 nm左右的蓝色发光峰及502 nm左右微弱的绿光峰,随衬底温度升高,样品的PL谱中紫光及蓝光强度逐渐增大,同时,绿光峰的强度也表现出一定程度的增强。经分析得出紫光应是激子发光所致,而锌填隙则是引起蓝光发射的主要原因,502 nm左右的绿光峰应该是氧的深能级缺陷造成的。此外,还测量了样品的吸收谱,并结合样品吸收谱的拟合结果对光致发光机理的分析作了进一步的验证。     

傅里叶光谱仪高精度光谱定标研究

为了提高傅里叶光谱仪光谱定标精度,减小光谱定标误差,基于风云四号大气垂直探测仪实验室气体池光谱定标数据,进行傅里叶光谱仪高精度光谱定标算法研究。首先,分析了傅里叶光谱仪的分光原理,并在对参考激光波数漂移、光线离轴、以及有限视场引起光谱波数偏移的原理进行分析后,得出傅里叶光谱仪光谱定标公式及定标参数的计算方法;接着分析了快速傅里叶变换(FFT)的栅栏效应和干涉图截断产生的sinc函数造成的光谱定标误差较大的原因;然后通过对比几种不同的光谱细化方法,选择高效的快速Chirp Z-transform(CZT)进行光谱细化,解决FFT光谱分辨率较低导致光谱误差较大的问题;通过对气体池参考气体在HITRAN数据库中的理论谱线,用Gaussian线型展宽并卷积sinc函数处理后作为光谱定标参考谱线的方式,减小由sinc函数引起的谱线间串扰造成的光谱定标误差,从而提高光谱定标精度。最后,使用实验测得的数据对该光谱定标算法进行验证,对比使用CZT细化光谱前后定标误差,和参考谱线处理前后的定标误差,证明该算法可以有效提高光谱定标精度,最高可将光谱定标误差减小10倍以上。     

Large-Quantity Synthesis of Single-Crystalline Metal Indium Nano/Sub-Micron Wires

Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.