Growth of NaBi（WO4）2 Dendrite and Mechanism

The solid-liquid interface motion of NaBi（WO4）2 （NBWO） melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches.     

二阶Volterra系统对平稳正态激励的统计响应的表示定理的数学证明

1974年,Neal根据Kac和Siegert的思想,给出了一个在电子工程、海洋工程、建筑工程、航空工程、自动控制的随机振动中有重要应用的二阶Volterra非线性系统对平稳正态输入的统计响应的表示定理.1984年,Naess对此定理又给出了一个数学证明.经过研究后发现,他们对定理条件的叙述都是模糊的,而且其数学证明都是有问题的.本文重新讨论了这个表示定理,给出了明确的定理条件及严格的数学证明,为它的广泛应用奠定了理论基础.     

浅论《数学实验》课程的基础课地位

本论述了大学本科的《教学实验》课的基础课地位以及它的教学指导思想，阐述了它与相关的其它课程的关系及课程本身的一些特点。     

交变电场作用下单液滴蒸发的分子动力学模拟

利用分子动力学方法研究了正弦形式的交变电场对三维悬浮水滴在超临界氮气环境下蒸发特性的影响,主要考虑了电场幅值和频率对液滴蒸发寿命和液滴瞬时蒸发速率的影响.其中水滴由8000个水分子组成,环境气体由27000个氮气分子组成.首先利用分子动力学方法模拟计算了不同状态下水的物性参数以及亚临界条件下匀强电场对液滴蒸发特性的影响...     

典型卫星轨道辐射环境及在轨软错误率预计模型分析

使用最新版本的Space Radiation 7.0软件对典型卫星轨道(包括地球同步轨道、中地轨道和低地轨道)的空间辐射环境进行提取和计算,分析不同空间天气和屏蔽条件下的轨道离子通量-能量谱和通量-线性能量沉积(LET)谱特点。以一款SOI SRAM为例,结合地面加速器重离子试验获得的单粒子翻转截面-LET值关系曲线,预计该器件的在轨软错误率(SER),并分析关键参数对预计结果的影响规律和内在机理。结果表明,使用Space Radiation软件的四种输入模式获得的预计结果可相差5倍左右;灵敏区厚度的增大导致在轨SER降低数个数量级,原因为灵敏区厚度的设置与灵敏区平均投影面积和符合条件的空间离子通量的大小直接相关;漏斗长度的大小对预计结果有一定的影响。最后,对SER预计模型的适用性和发展趋势进行了讨论。     

Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy

The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy （HVPE） is investigated. By decreasing the reactor pressure from0. 7 to 0.5 mm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is One of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.     

Theoretical study on the mechanism for the excited-state double proton transfer process of an asymmetric Schiff base ligand

Excited-state double proton transfer (ESDPT) in the 1-[(2-hydroxy-3-methoxy-benzylidene)-hydrazonomethyl]-naphthalen-2-ol (HYDRAVH₂) ligand was studied by the density functional theory and time-dependent density functional theory method. The analysis of frontier molecular orbitals, infrared spectra, and non-covalent interactions have cross-validated that the asymmetric structure has an influence on the proton transfer, which makes the proton transfer ability of the two hydrogen protons different. The potential energy surfaces in both S₀ and S₁ states were scanned with varying O-H bond lengths. The results of potential energy surface analysis adequately proved that the HYDRAVH₂ can undergo the ESDPT process in the S₁ state and the double proton transfer process is a stepwise proton transfer mechanism. Our work can pave the way towards the design and synthesis of new molecules.     

关于量子体系的高效相干能量转移的最优初始化的研究

For an energy transfer network, the irreversible depletion of excited electron energy occurs through either an efficient flow into an outer energy sink or an inefficient decay. With a small decay rate, the energy transfer efficiency is quantitatively reflected by the average life time of excitation energy before being trapped in the sink where the decay process is omitted. In the weak dissipation regime, the trapping time is analyzed within the exciton population subspace based on the secular Redfield equation. The requirement of the noise-enhanced energy transfer is obtained, where the trapping time follows an exact or approximate 1/Γ-scaling of the dissipation strength Γ. On the opposite side, optimal initial system states are conceptually constructed to suppress the 1/Γ-scaling of the trapping time and maximize the coherent transfer efficiency. Our theory is numerically testified in four models, including a biased two-site system, a symmetric three-site branching system, a homogeneous onedimensional chain, and an 8-chromophore FMO protein complex.     

旋转双棱镜光束指向控制技术综述

旋转双棱镜系统通过两棱镜的共轴独立旋转改变光的传播方向,可用于调整光束或视轴指向。与传统的两轴、三轴式光电平台相比,基于旋转双棱镜设计的光束或视轴调整装置具有精度高、结构紧凑、动态性能好等优点,已成为传统光电平台的有益补充。本文分析了双棱镜系统的光束指向调整机制;介绍了国内外相关基础研究的热点问题,主要涉及光束转向机制、光束扫描模式、棱镜回转控制以及棱镜引起的光束变形、成像色差、成像畸变的研究。文中描述了该项技术的应用进展,给出了利用该项技术开发的典型产品以及该项技术在激光光束指向调整和目标搜索、识别与跟踪成像方面的应用。最后,探讨了旋转棱镜在扫描模式、光束质量、成像色差与畸变、回转控制等方面面临的技术难题,并对其发展趋势进行了展望。     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).