Analysis of heating effect on the process of high deposition rate microcrystalline silicon

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied.It includes the discharge time-accumulating heating effect,discharge power,inter-electrode distance,and total gas flow rate induced heating effect.It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other.However,all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films,which will affect the properties of the materials with increasing time.This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed.Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon,it is proposed that the discharge power and the heating temperature should be as low as possible,and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.     

Three-dimensional elasticity solutions for bending of generally supported thick functionally graded plates

Three-dimensional elasticity solutions for static bending of thick functionally graded plates are presented using a hybrid semi-analytical approach-the state-space based differential quadrature method （SSDQM）. The plate is generally supported at four edges for which the two-way differential quadrature method is used to solve the in-plane variations of the stress and displacement fields numerically. An approximate laminate model （ALM） is exploited to reduce the inhomogeneous plate into a multi-layered laminate, thus applying the state space method to solve analytically in the thickness direction. Both the convergence properties of SSDQM and ALM are examined. The SSDQM is validated by comparing the numerical results with the exact solutions reported in the literature. As an example, the Mori-Tanaka model is used to predict the effective bulk and shear moduli. Effects of gradient index and aspect ratios on the bending behavior of functionally graded thick plates are investigated.     

Influence of substrate process tolerances on transmission characteristics of frequency-selective surface

Frequency-selective surface(FSS)is a two-dimensional periodic structure consisting of a dielectric substrate and the metal units(or apertures)arranged periodically on it.When manufacturing the substrate,its thickness and dielectric constant suffer process tolerances.This may induce the center frequency of the FSS to shift,and consequently influence its characteristics.In this paper,a bandpass FSS structure is designed.The units are the Jerusalem crosses arranged squarely.The mode-matching technique is used for simulation.The influence of the tolerances of the substrate's thickness and dielectric constant on the center frequency is analyzed.Results show that the tolerances of thickness and dielectric constant have different influences on the center frequency of the FSS.It is necessary to ensure the process tolerance of the dielectric constant in the design and manufacturing of the substrate in order to stabilize the center frequency.     

腰果酚型聚苯并噁嗪基超疏水涂层的制备及其性能

首先合成了腰果酚型苯并噁嗪单体(C-a),然后采用旋涂和热固化的方法制备了腰果酚型聚苯并噁嗪/SiO_2(PC-a/SiO_2)超疏水涂层。通过傅里叶红外光谱(FT-IR)及核磁共振(NMR)等测试手段对单体结构进行了表征,并对PC-a/SiO_2涂层的超疏水性能进行了研究。结果表明,通过调控SiO_2纳米粒子的掺杂量,可制备水接触角为(166±4)°,滚动角为6°的"荷叶效应"型超疏水涂层和水接触角为(151±3)°的"玫瑰花效应"型超疏水涂层。该PC-a/SiO_2超疏水涂层具有良好的热稳定性和抗紫外性能。     

Ti掺杂对Li-Mg-N-H材料储氢性能影响的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波方法,研究了Ti掺杂对Li₂MgN₂H₂材料储氢性能的影响及作用机理,计算给出了杂质替换能、生成焓、能带结构、态密度、差分电荷密度及布居等。研究表明,Ti掺杂Li₂MgN₂H₂体系时,其倾向于替换其中的Mg原子,且当替换8c位置的Mg时,杂质替换能最低,晶体结构最为稳定。生成焓计算结果表明,Ti掺杂能够有效降低Li₂MgN₂H₂的结构稳定性,有利于其吸氢反应的进行。进一步结合电子结构分析发现,Ti掺杂使得Li₂MgN₂H₂材料的晶胞体积增大,能隙降低,同时Ti与N原子之间较强的相互作用使得Li—N和N—H键的成键峰峰值降低,键强减弱,这些因素均有利于Li₂MgN₂H₂材料吸氢动力学性能的提高。     

聚合物/磷酸盐双水相分离乳清分离蛋白中α-乳白蛋白和β-乳球蛋白条件的优化

建立了基于聚(乙二醇-ran-丙二醇)单丁基醚(聚合物)与磷酸盐、氯化钠的双水相体系对乳清分离蛋白(WPI)中的α-乳白蛋白(α-LA)和β-乳球蛋白(β-LG)进行分离,并对其分离条件进行了优化.系统地研究了双水相体系pH值、聚合物与KH2PO4溶液体积比、NaC1添加量和WPI浓度对α-LA和β-LG的分离效果的影响,采用液相色谱法对α-LA和β-LG的分离效果进行评价.结果表明,聚合物/KH2PO4双水相体系pH=4.0,40％ (m/m)聚合物与15.5％ (m/m)KH2PO4的体积比为4 mL∶4 mL,NaCl添加量为0.40 g/10 mL,WPI浓度为1 mg/mL时,α-LA和β-LG分离效果最好,上相中α-LA的萃取率为98.2％,下相中β-LG的萃取率为96.6％.     

HEB太赫兹混频器使用微波补偿的稳定方法

我们对氮化铌(NbN)热电子测热辐射计(Hot Electron Bolometer,简称:HEB)的太赫兹(Terahertz,简称:THz)混频器的稳定性进行了研究,并探讨了相应的简易稳定方法.我们测量了HEB THz混频器在4.2K温度下使用0.65THz本振源(Local Oscillator,简称:LO)的中频输出.为了稳定混频器的工作点,我们采用了一个具有微波补偿功能的反馈回路.在这个反馈回路里,我们使用的微波补偿频率(10GHz)远远低于NbN HEB混频器的工作频率(0.65THz),以补偿混频器的THz LO功率波动.这使系统的艾伦时间(Allan time)增加到22s以上,从而改善了系统的稳定性.     

Design of a low level radio frequency control system for the direct current-superconductive photocathode injector at Peking University

A digital low level radio frequency (LLRF) control system based on a high precision field-programmable gate array (FPGA) is being developed for the stable operation of the upgraded direct current-superconductive (DC-SC) photocathode injector at Peking University. The design of this LLRF control system is described, including both the hardware and the internal algorithm. Analysis of disturbances shows that the system can achieve the requirement of ±0.1% for amplitude stability and ±0.1° for phase stability. Through experiments, preliminary results are presented in the paper.     

Amplitude and phase stability studies in a DC superconducting injector

The DC superconducting injector will be used in the PKU-THz facility which consists of a DC-gun and a 3+1/2-cell superconducting cavity. The cavity must accelerate the electron beam to 5.82 MeV which is susceptible to perturbations because of its narrow bandwidth. In this paper, the sources and influences of the perturbations in the 3+1/2-cell cavity are discussed. It is shown that the control system is essential for the cavity. The design of a feedback based digital RF low level control system for the 3+1/2-cell cavity is accomplished.