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提出了知识的Rough熵与Fuzzy熵的概念,综合度量了知识的粗糙性和二元关系的不确定性,讨论了它的性质,给出了若干定理,并应用于目标信息系统的相对约简,得到最小约简,最后举例说明相对约简过程。 相似文献
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为了克服现有复杂网络鲁棒性研究模型只考虑节点失效的局部影响性和网络拓扑鲁棒性的缺陷, 提出了一种利用节点效率来评估复杂网络功能鲁棒性的方法. 该方法综合考虑节点失效的全局影响性, 利用网络中节点的效率来定义各节点的负载、极限负载和失效模型, 通过打击后网络中最终失效节点的比例来衡量网络的功能鲁棒性, 并给出了其评估优化算法. 实验分析表明该方法对考虑节点负载的复杂网络功能鲁棒性的评定可行有效, 对于大型复杂网络可以获得理想的计算能力. 相似文献
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Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment
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This paper reports that the polycrystalline Si0.965Mn0.035:B films have been prepared by cosputtering deposition followed by rapid thermal annealing for crystallization. The polycrystalline thin films consist of two ferromagnetic phases. The low temperature ferromagnetic phase with Curie temperature (Tc) of about 50 K is due to the Mn4Si7 phase in the films, while the high temperature one (Tc~250 K) is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035:B films suggests that the hole carriers play an important role in Si:Mn diluted magnetic semiconductors. 相似文献
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Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films
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This paper reports that the high-quality Co-doped ZnO
single crystalline films have been grown on $a$-plane sapphire
substrates by using molecular-beam epitaxy. The as-grown films show
high resistivity and non-ferromagnetism at room temperature, while
they become good conductive and ferromagnetic after annealing in the
reducing atmosphere either in the presence or absence of Zn vapour.
The x-ray absorption studies indicate that all Co ions in these
samples actually substituted into the ZnO lattice without formatting
any detectable secondary phase. Compared with weak ferromagnetism
(0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn6110M, 7550P, 7280E, 7870D http://cpb.iphy.ac.cn/CN/10.1088/1674-1056/19/5/056101 https://cpb.iphy.ac.cn/CN/article/downloadArticleFile.do?attachType=PDF&id=111756 Co-doped ZnO, diluted magnetic semiconductors, x-ray
absorption fine structure, single crystalline thin films Project partially supported by
National Science Foundation of China (Grant No.~10804017), National
Science Foundation of Jiangsu Province of China (Grant
No.~BK2007118), Research Fund for the Doctoral Program of Higher
Education of China (Grant No.~20070286037), Cyanine-Project
Foundation of Jiangsu Province of China (Grant No.~1107020060),
Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu
Province of China (Grant No.~1107020070) and New Century Excellent
Talents in University (NCET-05-0452). This paper reports that the high-quality Co-doped ZnO
single crystalline films have been grown on $a$-plane sapphire
substrates by using molecular-beam epitaxy. The as-grown films show
high resistivity and non-ferromagnetism at room temperature, while
they become good conductive and ferromagnetic after annealing in the
reducing atmosphere either in the presence or absence of Zn vapour.
The x-ray absorption studies indicate that all Co ions in these
samples actually substituted into the ZnO lattice without formatting
any detectable secondary phase. Compared with weak ferromagnetism
(0.16~$\mu _{\rm B}$/Co$^{2 + })$ in the Zn$_{0.95}$Co$_{0.05}$O
single crystalline film with reducing annealing in the absence of Zn
vapour, the films annealed in the reducing atmosphere with Zn vapour
are found to have much stronger ferromagnetism (0.65~$\mu _{\rm
B}$/Co$^{2 + })$ at room temperature. This experimental studies
clearly indicate that Zn interstitials are more effective than
oxygen vacancies to activate the high-temperature ferromagnetism in
Co-doped ZnO films, and the corresponding ferromagnetic mechanism is
discussed. Co-doped;ZnO;diluted;magnetic;semiconductors;x-ray;absorption;fine;structure;single;crystalline;thin;films This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy.The as-grown films show high resistivity and non-ferromagnetism at room temperature,while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour.The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase.Compared with weak ferromagnetism(0.16 μB/Co2+) in the Zn0.95Co0.05O single crystalline film with reducing annealing in the absence of Zn vapour,the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism(0.65 μB/Co2+) at room temperature.This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films,and the corresponding ferromagnetic mechanism is discussed. 相似文献
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针对航空维修质量多目标评估中存在的不确定性信息,采用区间数的相离度来确定属性的权重,再通过WAA算子得到方案的综合属性值;并根据可能度矩阵求得排序向量,从而得到评估方案.最后的算例证明了模型的可行性和可靠性. 相似文献
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通过柔性配体1,3-丙二胺缩邻香兰素(H2L)与和La(NO3)3.6H2O反应,合成了1个由2个H2L桥连的双核稀土配合物[La2(NO3)6(H2L)2].CH2Cl2(1),该配合物与(NH4)(PF6)继续反应生成了1个由2个NO3-离子桥连的双核配合物[La2(NO3)2(H2L)4](PF6)4.4H2O.2CH2Cl2(2),X-射线单晶衍射分析确定了2个配合物的晶体结构。配合物1和2为结构完全不同的2个双核结构,因抗衡阴离子PF6-有去阴离子的作用,配合物1中的NO3-离子被配体取代,导致配合物1的结构翻转,形成了1个新颖的双核结构2。 相似文献
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融合目标规划、网络分析法和集结算子,提出一种航空维修信息系统的事前评价方法.用目标规划处理资源约束,用网络分析法处理相关性,用集结算子将评价者的评价信息集结成群评价信息.选择诱导有序加权欧氏平均算子作为集结算子,并与已有的诱导有序加权调和平均算子、诱导有序加权几何平均算子、诱导有序加权平均算子三种算子进行了对比,结果表明新算子的有效性.给出保序条件下数据分量的可变范围. 相似文献