双掺杂TGS晶体——LUTGS

分别在58～54℃和45～38℃温区生长了完整的LUTGS单晶.揭示了两种晶体的生长习性.通过对两种晶体电滞回线、介电、热释电性能的测量,发现两温区生长的LUTGS单晶的热释电材料优值M(P/ε)无大差异,但都比纯TGS有显著提高.     

大口径DKDP元件的辐照损伤分布特性

大口径高能激光装置是各强国积极研究的重点项目。对装置内大口径光学元件损伤特性进行有效评估具有非常重要的意义,在此研究大尺寸光学元件表面损伤。通过分段拍摄、图像拼合、损伤点记录、统计与归纳等工作发现,不同尺寸损伤点的分布特性差异较大。结合统计学方法与类似实验对比、理论计算等方式对损伤点分布与样品辐照环境特性变化的关系进行分析。结果显示,损伤点的位置分布与辐照光束的能量密度关联紧密;系统光束(351 nm)在低于6 J/cm2时能量分布均匀,高于6.7 J/cm2时呈现较为明显的高斯分布状态。可以为大口径高能辐照环境的元件损伤特性评估提供有价值的参考,对大口径紫外激光器的日常运行与维护具有极其重要的工程意义。     

超大尺寸KDP/DKDP晶体研究进展

KDP/DKDP晶体具有生长方法简单、成本较低、光学性能良好等优点,而可生长出的超大尺寸KDP/DKDP晶体是目前唯一可用于高功率激光工程的单晶材料。但是在晶体的生长过程中存在很多影响因素,同时对晶体进行后处理也会影响晶体的性能,这都直接关系到超大尺寸KDP/DKDP晶体的实际应用。鉴于此,本文综述了近些年超大尺寸KDP/DKDP晶体的重要研究进展, 特别是针对传统生长和快速生长中存在的问题和相应的解决对策以及晶体性能相关的研究,并重点对晶体的透过率、氘化率、激光诱导损伤等进行了分析和讨论。     

不同方法DKDP晶体生长和损伤阈值

生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法,利用同种原料从氘化程度为85%的溶液生长了DKDP晶体,并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明,不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反,即由于生长溶液过饱和度的差别,点籽晶快速生长法晶体生长速度为传统方法的10倍,但晶体损伤阈值下降了50%,且紫外波段透过性能下降明显。     

A Thermal Approach to Model Laser Damage in KDP and DKDP Crystals

A thermal model is considered in order to better understand the mechanism of laser induced damage in KDP and DKDP crystals. We demonstrate that the expressions of pinpoint density and damage probability, predicted by the thermal model, are consistent with the experimental data. We also discuss the effect of particle interaction on the thermal model.     

Phase matching characteristics of deuterated ammonium dihydrogen phosphate crystals

Refractive indices for crystals ammonium dihydrogen phosphate(ADP), 30% deuterated ADP(DADP), 50%DADP, and 70% DADP are measured from 253 to 1529 nm with 5 × 10-6accuracy. Numerical fits to modified double-pole Sellmeier equation are made. Second-harmonic generation, third-harmonic generation phase matching(PM) angles, and noncritical PM(NCPM) wavelengths are calculated using the Sellmeier parameters. The deuterated crystals show smaller PM angles than pure crystal. Fourth-harmonic generation process can be realized by DADP in smaller deuterium content than deuterated potassium dihydrogen phosphate(DKDP).The measured NCPM wavelengths are consistent with the calculated value. PM characteristics are compared between DADP and DKDP.     

Growth Characteristics and Mechanism of Surface and Bulk Damage in KDP and DKDP Crystals

By testing the number increase and size growth of surface and bulk laser induced damage in KDP and DKDP crystals, we observe different growth characteristics of surface and bulk damage under multiple 355nm laser irradiations. The size of the surface damage grows exponentially, but that of the bulk damage does not grow. In contrast, the bulk damage number increases, but that of surface damage does not increase significantly. We attribute the differences to the different formation of the damage initiators and the different damage testing volumes.     

Cascaded third-harmonic-generation converter based on a single ADP crystal

Based on a specially designed optical structure, an efficient cascaded third-harmonic-generation(THG) output of a 1064-nm, pico-seconds pulse laser is successively realized by using an NH_4H_2PO_4(ADP) crystal that acts as the secondharmonic-generation component and sum-frequency-generation component. The maximum THG output is 1.61 mJ, and the highest conversion efficiency from 1064 nm to 355 nm reaches 35%, which are obviously superior to the results obtained using a KDP crystal under the same circumstance. The further phase-matching analysis indicates that this THG configuration of ADP crystal can be applied to various fundamental wavelengths in a range of 1 μm–1.1 μm. Compared with the previously reported KDP THG converter, which is based on a similar principle, the present ADP THG converter is favorable for large-energy, high-efficiency operation because of the larger effective nonlinear optical coefficient deffand higher laser damage threshold.     

Na+对KDP晶体生长的影响

本文利用传统的降温法和"点籽晶"快速生长法在不同Na+掺杂浓度的溶液中生长KDP晶体,定量研究了Na+对KDP晶体生长的影响.实验发现:Na+的存在降低了溶液的稳定性,致使KDP晶体柱面容易扩展.Na+的存在对KDP晶体的光学性能基本没有影响.     

不同波长三倍频DKDP晶体的激光损伤

采用传统降温法,利用高纯原料从氘化程度为80%的溶液生长了四方相磷酸二氘钾(DKDP)晶体,并按Ⅱ类三倍频方式切割晶体。三倍频用DKDP晶体的最大问题在于其抗光伤阈值低于KDP晶体,严重限制了激光输出的能量密度和晶体使用寿命。考察了不同波长下三倍频DKDP晶体的损伤阈值,以及激光退火效应。实验表明,激光退火对于DKDP晶体的损伤阈值有显著的提升作用,基频、倍频、三倍频的提升效果分别达到1.4,1.9,2.7倍,是改善DKDP晶体抗光伤能力的有效途径。