对一道高考题的再探究

文1中徐道老师对2011年江苏省高考数学试卷第13题进行了讨论与推广,文中的解法及所获结论均不正确.本文将指出文1中解法的错误,并给出正确的结论.例1(2011年江苏省高考数学试卷第13题)设1=a1≤a2≤…≤a7,其中a1,a3,a5,a7成公比为q的等比数列,a2,a4,     

超高真空下过渡金属Nb与Nb、Ta、Ti、W相互间粘附特性的试验研究

本文在超高真空(10~(-7)Pa)条件下量测了Nb-Nb(110)、Nb-Ta(110)、Nb-W(110)及Nb-Ti4个粘附对的粘附力,并从接触表面形貌的角度求得了真实接触面积,进而得到了各粘附对间的粘附强度,结果与采用简单紧束缚自洽矩方法计算所得理论结果一致。研究表明,超高真空下过渡金属间存在一种相互作用——由两金属间共用电子引起的化学键,而且主要由其外层d电子态密度所决定。过渡金属Nb与Nb、Ta、W、Ti之间粘附强度的实测值介于每对原子0.2～2.0eV之间。当样品受热升温后,由于C、N、B、S等少量非金属杂质的表面偏析致使粘附强度明显降低。     

水舌空中左右碰撞的水力特性及其作用下的河床基岩冲刷平衡深度估算

应用紊动射流理论和水流动量方程，提出了水舌空中左右碰撞时合水舌的碰撞流速矢量、碰撞消能效率的计算公式。分析和比较了水舌空中左右碰撞与上下碰撞方式下合水舌的碰撞角，碰撞消能效率和其空中扩散方面的差异，提出了水舌空中左右碰撞作用下河床基岩冲刷平衡深度的一种估算方法。以模型实验资料验证，预测值和实测值基本吻合。因此表明，对水舌空中碰撞的水力特性分析是正确的，河床基岩冲刷平衡深度的估算方法是合理可行的。研究成果可为高坝下游消能防冲参考。     

微晶硅薄膜的制备及结构和稳定性研究

采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明：随衬底温度的升高，材料 中的氢含量总的趋势下降；傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加（在10¹⁹cm^-3量级）；与高衬底温度相 比，低衬底温度制备的材料易于后氧化，这说明低温制备材料的稳定性不好. 关键词： 甚高频等离子体增强化学气相沉积 微晶硅薄膜 傅里叶变换红外吸收     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

Influence of Intertube Additional Atoms on Sliding Behaviors of Double-Walled Carbon Nanotube

The effects of intertube additional atoms on the sliding behaviors of double-walled carbon nanotubes(DWCNTs) are investigated using molecular dynamics(MD) simulation method.The interaction between carbon atoms is modeled using the second-generation reactive empirical bond-order potential coupled with the Lennard-Jones potential.The simulations indicate that intertube additional atoms of DWCNT can significantly enhance the load transfer between neighboring tubes of DWCNT.The improvement in load transfer is guaranteed by the addition of intertube atoms which are covalently bonded to the inner and outer tubes of DWCNT.The results also show that the sliding behaviors of DWCNT are strongly dependent of additional atom numbers.The results presented here demonstrate that the superior mechanical properties of DWCNT can be realized by controlling intertube coupling.The general conclusions derived from this work may be of importance in devising high-performance CNT composites.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

基于Landsat 8 OLI数据的玉米冠层含水量反演研究

植被含水量是作物长势好坏的指示因子,利用遥感技术及时准确监测植被含水量对农业生产、作物估产和干旱状况评价具有重要意义。基于新一代对地观测计划Landsat 8 OLI传感器(Operational Land Imager,陆地成像仪),评价其植被含水量反演的能力与局限性。首先,利用ProSail冠层模型模拟冠层光谱反射率数据集,分析OLI传感器的植被含水量敏感波段以及土壤背景对各波段反射率的影响,然后利用基于Landsat OLI影像计算的植被水分指数和2013年6月1日—8月14日期间采样的植被含水量数据,比较12种植被水分指数与地面实际采样的植被含水量的相关性,评价估算植被含水量的最佳植被水分指数。结果表明：OLI传感器的红、近红外和两个短波红外对植被含水量敏感,其中近红外波段最为敏感;在低植被覆盖度时,土壤背景反射率的太阳辐射将达到光谱传感器影响植被水分指数与植被含水量之间的关系,利用ProSail模拟干湿土壤背景反射率结果也表明土壤背景对植被冠层反射率的影响很大;引入优化土壤调整植被指数(OSAVI)去除土壤背景对植被水分指数的影响;在12种植被水分指数中,MSI2与植被含水量的拟合关系最好(R2=0.948),植被含水量的平均拟合误差为0.52 kg·m-2;在植被生长晚期即植被含水量大于2 kg·m-2时,各植被水分指数出现饱和情况,植被含水量的估算结果不佳。     

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide(ZnO:In) thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate.1 and 2 at.% indium doped single-layer ZnO:In thin films with different amounts of acetic acid added in the initial solution were fabricated.The 1 at.% indium doped single-layers have triangle grains.The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82×10-3Ω·cm and particle grains.The doublelayers structure is designed to fabricate the ZnO:In thin film with low resistivity(2.58×10-3Ω·cm) and good surface morphology.It is found that the surface morphology of the double-layer ZnO:In film strongly depends on the substratelayer,and the second-layer plays a large part in the resistivity of the double-layer ZnO:In thin film.Both total and direct transmittances of the double-layer ZnO:In film are above 80% in the visible light region.Single junction a-Si:H solar cell based on the double-layer ZnO:In as front electrode is also investigated.     

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied.It includes the discharge time-accumulating heating effect,discharge power,inter-electrode distance,and total gas flow rate induced heating effect.It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other.However,all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films,which will affect the properties of the materials with increasing time.This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed.Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon,it is proposed that the discharge power and the heating temperature should be as low as possible,and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated.