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本文首次在77K温度的电致发光光谱上,观测到了自由激子和自由激子(Ex-Ex)散射的发射带P。根据半经典理论,得到CdS单晶在高激发密度下的激子有效温度高于晶格温度。并且在77K温度下,通过氮分子激光器3371Å谱线的激发,观察到了Ex-Ex散射的P带的受激发射现象。 相似文献
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选用Mg0.2Zn0.8O陶瓷靶,利用脉冲激光沉积(PLD)法,在单晶Si(100)和石英衬底上生长了一系列MgZnO薄膜(MZO)。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)和紫外可见光透射光谱(UV-Vis)等实验手段,研究了在不同工作压强下生长的薄膜样品的晶体结构、微观形貌和光学性能的变化。结果表明:所有的薄膜样品都是单一的ZnO六方相,禁带宽度随生长压强的升高而增加,变化范围在3.83~4.05eV之间,最短吸收边接近300nm。 相似文献
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Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering
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TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by arf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and 02 atmospheres. The substrate temperature is kept at 300℃. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N ls of β-N (396 eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8 eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3 eV, which is verified by the optical-absorption spectra. 相似文献
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ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition (MOCVD), and the temperature-dependent photoluminescence (PL) properties were investigated. The near-band-edge (NBE) emission of the ZnTe sample at 83K shows an asymmetry line shape, which can be decomposed into two Gaus-siam lines labelled by FE and BE. Temperature-dependent PL intensity of the NBE peak shows two variation regions, and an expression with two dissociation channels fits well to the experimental data. The results of the temperature-dependent full width at half maximum (FWHM) and peak energy were well understood under the framework of the two-dissociation-channel model. That is, at low temperature, the emission from bound excitons governs the NBE peak, while above 157K, the free exciton emission becomes dominant gradually. A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature. 相似文献
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利用等离子体辅助分子束外延设备(P-MBE)在m面的蓝宝石(m-Al2O3)衬底上制备了ZnO/Zn0.85Mg0.15O多量子阱.反射式高能电子衍射谱(RHEED)图样的原位观察表明,多量子阱结构是以二维模式生长的.从光致发光谱中可以看到ZnO/Zn0.85Mg0.15O多量子阱在室温仍具有明显的量子限域效应.在290 K时阱宽为3 nm的ZnO/Zn0.85
关键词:
等离子体辅助分子束外延
ZnO多量子阱
光致发光 相似文献
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利用脉冲激光沉积技术在非晶石英衬底上制备了立方结构MgZnO薄膜,研究了在不同Ar/O2气压比例条件下,立方结构MgZnO薄膜的生长取向、光学带隙和Mg/Zn含量比例的变化规律。当固定氧气分压为2 Pa、通过注入惰性的Ar气使生长气压从2 Pa升高到7 Pa时,MgZnO薄膜的生长取向由(200)向(111)转变。当生长气压从2 Pa升高到6 Pa时,MgZnO薄膜光学带隙变窄。而当生长气压从6 Pa升高到7 Pa时,MgZnO薄膜光学带隙反而变宽。通过XPS数据分析,不同生长气压下MgZnO薄膜光学带隙的变化规律与薄膜Mg/Zn含量比例的变化规律不一致,MgZnO薄膜中Mg和Zn与O的结合情况的变化对薄膜的光学带隙也有影响。 相似文献
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利用脉冲激光沉积技术在非晶石英衬底上制备立方结构MgZnO薄膜,并研究MgZnO薄膜结晶特性、光学带隙随生长温度的变化情况。当生长温度从150℃升高到700℃时,MgZnO薄膜的生长取向由(200)向(111)转变。在600℃以下,MgZnO薄膜光学带隙的变化规律与晶格中Mg和Zn原子比例的变化趋势是一致的;而当温度升至700℃时,虽然MgZnO晶格中Mg和Zn原子比例降低,但由于平均晶粒尺寸变大,薄膜的光学带隙反而上升。在300℃和700℃晶格匹配的情况下,获得了单一(200)和(111)取向的立方MgZnO薄膜。 相似文献