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In a planar undulator employed free electron laser (FEL), each harmonic radiation starts from linear amplification and ends with nonlinear harmonic interactions of the lower nonlinear harmonics and the fundamental radiation. In this paper, we investigate the harmonic generation based on the dispersion relation driven from the coupled Maxwell-Vlasov equations, taking into account the effects due to energy spread, emittance, betatron oscillation of electron beam as well as diffraction guiding of the radiation field. A 3D universal scaling function for gain of the linear harmonic generation and a 1D universal scaling function for gain of the nonlinear harmonic generation are presented, which promise rapid computation in FEL design and optimization. The analytical approaches have been validated by 3D simulation results in large range. 相似文献
93.
采用飞行时间质谱计测量了纳秒激光诱导C60分子碎裂中轻碎片离子C n(n≤11)的初始平均动能,结果显示轻碎片离子具有相同的初始平均动能(约为0.34 eV),并且该动能在一定范围内不随激光通量的变化而明显改变.结合前人的实验结果,对纳秒激光诱导C60分子碎裂中轻碎片离子C n(n<30)的主要产生模式作了新的阐述,即C60分子级联发射15个C2分子和一个电子形成自身不稳定的C 30离子,在皮秒时间尺度内C 30离子的笼形结构塌陷,进而轻碎片离子产生. 相似文献
94.
Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling 下载免费PDF全文
A three-dimensional finite element models for phase change random access memory (PCRAM) is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure (CS) and the ring-type contact in bottom electrode (RIB) are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in CST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current. 相似文献
95.
Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from Oppm to lOOppm. However, the sensitivity nearly keeps a constant of O. 158 between 30 ppm and 70 ppm. The best working temperature of the gas sensor is 90℃ for NO2 gas concentrations of lOppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor. 相似文献
96.
The laser properties of the Nd:YGG crystal are investigated. The absorption spectrum from 500 to 90Onto and emission spectrum from 850 to 1400nm of Nd:YGG are measured. As much as 1.35 W output power of fundamental laser operating at 935 and 938nm with a slope efficiency of 15.7% and 105mW output power of frequency doubled blue laser are successfully obtained. 相似文献
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Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition (PLD). Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results. 相似文献