辉光放电等离子体辅助XeCl准分子激光溅射沉积碳氮薄膜

利用直流辉光放电等离子体辅助的脉冲激光沉积技术在Si衬底上生长了碳氮薄膜.通过扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱等多种手段,对薄膜的形貌、成分、晶体结构、价键状态等特性进行了分析和确定.结果表明,沉积薄膜为含有非晶SiN和晶态氮化碳颗粒结构,晶态成分呈多晶态,主要为α-C₃N₄相、β-C₃N₄相,晶粒大小为40—60nm.碳氮之间主要以C-N非极性共价键形式相结合. 关键词： 脉冲激光沉积 直流辉光放电 碳氮薄膜     

轰击阴极的重粒子能量分布

采用蒙特卡罗模拟对氮辉光放电等离子体中轰击极阴的重粒子（N2^ ,N^ ,Nf及N2f）能量分布随放电参数的变化规律进行了研究。结果表明：阴极臂前诸粒子的能量分布取决于粒子被加速的能量和碰撞频率,能量较低的快原子Nf的密度比高能粒子N^ 的密度最近两个量级。在活性氮粒子（N^ ,Nf）产率最高的放电条件下,适当降低放电气压,提高阴极位降和气体温度,有利于两种活性氮粒子（N^ ,Nf）达到阴极。     

有序纳米半导体量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性,正在各类量子功能器件中获得成功应用.作为纳米量子点的一种主要制备工艺,自组织生长技术正在受到人们的普遍重视.而如何实现具有尺寸与密度可控纳米量子点的自组织生长,更为材料物理学家们所广泛关注.因为这是由自组织方法形成的量子点最终能否器件实用化的关键.本文简要介绍了有序纳米量子点的自组织生长及其新近研究进展.     

Investigation of the photoelectron decay of silver halide microcrystal

The microwave absorption dielectric spectrum can be used to study the decay process of free photoelectrons and shallow-trapped electrons in semiconductor crystals. The decay curve of free photoelectrons and shallow-trapped electrons of silver halide grains is measured using this technique. The influence of iodide and K_4Fe(CN)_6 shallow electron trap dopants on the photoelectron lifetime of silver halide grains is studied. For the unsensitized cubic AgCl crystals, when the free photoelectron lifetime (FLT) reaches a maximum, the photographic efficiency is optimal. From our analysis, we conclude that FLT is the longest for the cubic AgCl crystals doped with 0.5% iodide at 80% doping position and 1×10^{-6} mol K_4Fe(CN)_6/molAg, whereas, for the highly photosensitized cubic AgBrCl crystals doped with K_4Fe(CN)_6, the photographic efficiency is optimal when the FLT reaches its minimum. The free photoelectron lifetime reaches minimum and the sensitivity of AgBrCl emulsion reaches maximum when the doping position is 30%Ag at K_4Fe(CN)_6 content of 10^{-6}mol/molAg.     

Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy

In this paper, surface photovoltage spectroscopy (SPS) is used to determine the electronic structure of the hydrogenated transition Si films. All samples are prepared by using helicon wave plasma-enhanced chemical vapour deposition technique, the films exhibit a transition from the amorphous phase to the microcrystalline phase with increasing temperature. The film deposited at lower substrate temperature has the amorphous-like electronic structure with two types of dominant defect states corresponding to the occupied Si dangling bond states (D⁰/D^- and the empty Si dangling states (D⁺). At higher substrate temperature, the crystallinity of the deposited films increases, while their band gap energy decreases. Meanwhile, two types of additional defect states is incorporate into the films as compared with the amorphous counterpart, which is attributed to the interface defect states between the microcrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples deposited above 300\du increases first and decreases afterwards, which may be interpreted as a result of the competition between hydrogen release and crystalline grain size increment with increasing substrate temperature.     

利用Ce:KNSBN光折变晶体提高光学图像相关模式识别鉴别率

给出了在相干匹配滤波系统中利用Ce:KNSBN光折变晶体非线性特性实现图像边缘增强光学相关模式识别的理论分析和实验结果。实验中自相关峰半最大值宽度降低了75％，自相关峰与互相关峰的强度比增强了近一倍，自相关峰的边瓣强度和互相关峰的强度得到抑制，系统的信噪比和相关鉴别率得到显著提高。     

ANALYSIS OF F′0+u ION-PAIR STATE OF IODINE

The optical-optical double resonant multiphoton ionization (OODR-MPI) technique and the fluorescent excitation spectroscopy technique have been applied to the study of the F′0⁺_u ion-pair state of iodine. This paper presents OODR-MPI spectrum and fluorescent excitation spectrum of I₂ in the region of 54000-55300cm^-1 by the three-photon resonant, two-photon ionization (1+2+2) and (1+(1+1)+2) processes.     

强红外场作用下BCl3振动态传能动力学研究

基于文献[1],本工作在较高泵浦激光能通量范围,测量并研究了BCl₃分子振动激发v_3吸收谱及时间演变,观察了v₃激发弛豫的几种能量转移过程,以及对泵浦激光能量BCl₃气压等参数的依赖关系。表明泵浦光脉冲产生一个振动态非热分布的系综,转动能量转移对引起这种非热分布有重要作用。用简化碰撞动力学模型讨论了BCl₃振动激发吸收谱的演变过程,得到振动态再分布的简单关系;Pτ_v-v≌c/K′(T_v,T₀,q)和等效振动温度、平均吸收光子数的分析表达式,与实验结果定性地符合。 关键词：     

Photoluminescence Mechanism of ZnO：Zn Investigated by Microwave Dielectric Spectrometry

We investigate the decay process of photoelectrons from a luminescent material of ZnO:Zn using a microwave dielectric spectrometry. Electrons in the conduction band are found to decay exponentially and the lifetime is 781 ns, while the time interval of decay from the maximum to half of this value is 470ns. ZnO:Zn is a green luminescent material at its central wavelength of 510 nm. Compared to the decay of electrons in the conduction band, the decay process of the luminescence is faster, and the time interval of decay from the maximum to half of the maximum is about 100 ns. We believe that the mechanism of the ZnO:Zn visible luminescence is recombination luminescence, and find that our theoretical simulation is in agreement with the experimental results.     

螺旋波等离子体化学气相沉积纳米硅薄膜的光学发射谱研究

利用光学发射谱技术对螺旋波等离子体化学气相沉积纳米硅薄膜的等离子体内活性粒子的光发射特征进行了原位测量.研究了薄膜沉积过程中各实验参量对活性基团SiH^*， H^β以及H^α的发射谱强度的影响.实验结果表明，静态磁场的加入可显著提高反应气体 的解离效率 ；适当的氢稀释可以提高氢活性粒子的浓度，而过高的氢稀释比将使含硅活性基团浓度显著 减小；提高射频馈入功率整体上可以使各活性粒子的浓度增加，并有利于提高到达衬底表面 氢活性粒子的相对比例.结合螺旋波等离子体色散关系和等离子体特点对以上结果进行了分 析.该结果为螺旋波等离子体沉积纳米硅薄膜过程的理解及制备工艺参数的调整提供了基础 数据. 关键词： 光学发射谱 螺旋波等离子体化学气相沉积 纳米硅薄膜