从KL0产生（π±μ干）原子

本文求解了自旋是0-1/2的不等质量的库伦原子的Bethe-Salpeter方程。应用所求得的近似的B-S波函数以及近年来发展的复合粒子量子场论微扰展开理论计算了由K_L⁰产生（π^士μ^干）原子的几率。     

多粒子体系的相对论运动方程(Ⅱ)

本文建立了多粒子体系的相对论运动方程。多体相对论位势是多体B-S方程的不可约序列的确定重排列。在只考虑两体不可约B-S核时,多体位势是两体位势的某种叠加。     

Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization

Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers:(A) a GaN nucleation layer deposited at low temperature(LT);(B) an AlN nucleation layer deposited at high temperature;or(C) an LT thin AlN nucleation layer with an AlN layer and an AlN/AlGaN superlattice both subsequently deposited at high temperature.The samples have been characterized by Xray diffraction(XRD),atomic force microscopy and photoluminescence.The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A,indicating a reduction in crystal defect density.Furthermore,the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely.The improved optical property,corresponding to the enhanced crystal quality,is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements.     

An improved memristor model for brain-inspired computing

Memristors, as memristive devices, have received a great deal of interest since being fabricated by HP labs. The forgetting effect that has significant influences on memristors' performance has to be taken into account when they are employed. It is significant to build a good model that can express the forgetting effect well for application researches due to its promising prospects in brain-inspired computing. Some models are proposed to represent the forgetting effect but do not work well. In this paper, we present a novel window function, which has good performance in a drift model. We analyze the deficiencies of the previous drift diffusion models for the forgetting effect and propose an improved model. Moreover,the improved model is exploited as a synapse model in spiking neural networks to recognize digit images. Simulation results show that the improved model overcomes the defects of the previous models and can be used as a synapse model in brain-inspired computing due to its synaptic characteristics. The results also indicate that the improved model can express the forgetting effect better when it is employed in spiking neural networks, which means that more appropriate evaluations can be obtained in applications.     

用螺线管法测定铁磁材料的磁滞回线

测定铁磁材料磁滞回线的方法一般有冲击法(直流法)和示波法(交流法)。冲击法测磁滞回线的原理稍为复杂,操作麻烦,费时间;示波法测磁滞回线虽迅速,但学生不易了解回线的形成过程,而且用这种方法测得的回线所包围的“面积”代表的磁滞损耗往往还有涡流损耗的成份。这两种方法的主     

水热合成LuF3∶Yb3+，Er3+微晶及其上转换发射与温度传感特性

通过在不同pH值下的简易水热法合成不同Yb³⁺离子（n_Yb³⁺/n_Lu³⁺=5%~15%）和Er³⁺离子（n_Er³⁺/n_Lu³⁺=1%~5%）掺杂浓度的LuF₃∶Yb³⁺,Er³⁺微晶荧光粉。发现pH值对正交相LuF₃∶Yb³⁺,Er³⁺的合成起着关键作用。在980 nm激发下,LuF₃∶Yb³⁺,Er³⁺荧光体呈现出以523 nm（²H_11/2→⁴I_15/2）和539 nm（⁴S_3/2→⁴I_15/2）为中心的强绿光上转换（UC）发射以及以660 nm（⁴F_9/2→⁴I_15/2）为中心弱红光上转换发射。通过使用X射线衍射（XRD）和光致发光（PL）分析测定了最强发射强度的Er³⁺和Yb³⁺的最佳掺杂浓度。浓度依赖性研究表明,达到最强的绿光上转换发光时最佳掺杂浓度为10% Yb³⁺,2% Er³⁺。通过改变泵浦功率来研究LuF₃∶Yb³⁺,Er³⁺荧光粉UC发光机制。通过980 nm二极管激光器在293~573 K的范围内研究了在523和539 nm处的2个绿光UC发射带的荧光强度比（FIR）的温度依赖性,发现在490 K得到最大灵敏度约为15.3×10^-4 K^-1。这表明LuF₃∶Yb³⁺,Er³⁺荧光体可应用于具有高灵敏度的光学温度传感器。     

核内核子费米运动对π核双电荷交换反应的影响

本文考察了核内核子费米运动对π核双电荷交换(DCX)反应传统机制的影响,计算了~(14)C核到同位旋相似态的双电荷交换(DIAs DCX)反应在0～300MeV能区的0°激发函数,在100～300MeV的能区内能够很好地符合实验值,而在50 MeV附近,则比实验值小2～3倍。结果表明:仅用传统机制似乎不能完全解释DIAS DCX的低能反常行为,需要引入新的机制。     

热毛细振荡对流的实验研究

本文用实验的方法研究了半浮区液桥中由定常流向振荡流转捩的过程。发展了两种不接触诊断方法,测量了液桥自由面发生振动时的临界Marangoni数的分布。对于上壁加热和下壁加热两种情况,分别得到了实验结果,这些结果与Rayleigh不稳定性的理论预计相符。本文还讨论了液桥胖瘦程度对产生振荡流的敏感关系,从而表明自由面附近压力分布的重要性。本文的实验是在小液桥中进行的,其Bond数远小于1,因此可模拟微重力环境中的实验情况。     

透平蜗壳中的三元流动试验

一、引言 近年来对径流透平的科研工作已有较多的开展,以期获得新的设计计算方法,改善透平的性能.但蜗壳的设计,至今仍基于一元流动的假设,认为导向叶片进口流场是沿周向均匀的,这种假定不符合实际情况.实际上,由于气体的粘性,在蜗壳内壁面上将产生附面层,此附面层沿气体在蜗壳内的流向而发展.蜗壳壁面上,由于压强与气流的离心力不平衡而造成二次流.再加蜗壳进口本身流场不均匀的影响,蜗壳中的流动明显为三元流