排序方式: 共有64条查询结果,搜索用时 0 毫秒
61.
Electronic structure and defect states of transition films from amorphous to microcrystalline silicon studied by surface photovoltage spectroscopy
下载免费PDF全文
![点击此处可从《中国物理》网站下载免费的PDF全文](/ch/ext_images/free.gif)
In this paper, surface photovoltage spectroscopy (SPS) is used to
determine the electronic structure of the hydrogenated transition Si
films. All samples are prepared by using helicon wave plasma-enhanced
chemical vapour deposition technique, the films exhibit a transition
from the amorphous phase to the microcrystalline phase with
increasing temperature. The film deposited at lower substrate
temperature has the amorphous-like electronic structure with two
types of dominant defect states corresponding to the occupied Si
dangling bond states (D0/D- and the empty Si dangling
states (D+). At higher substrate temperature, the
crystallinity of the deposited films increases, while their band gap
energy decreases. Meanwhile, two types of additional defect states is
incorporate into the films as compared with the amorphous
counterpart, which is attributed to the interface defect states
between the microcrystalline Si grains and the amorphous matrix. The
relative SPS intensity of these two kinds of defect states in samples
deposited above 300\du increases first and decreases afterwards,
which may be interpreted as a result of the competition between
hydrogen release and crystalline grain size increment with increasing
substrate temperature. 相似文献
62.
The low temperature phase transformation in the Cu_2ZnSnS_4(CZTS) films was investigated by laser annealing and low temperature thermal annealing.The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite(KS) structure and promotes the formation of the partially disordered kesterite(PD-KS) structure in the CZTS films,and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region.Moreover,the above two processes were reversible.The Raman analyses of the CZTS samples prepared under different process show that the PD-KS structure tends to be found at low temperatures and low sulfur vapor pressures.Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films. 相似文献
63.
采用紫外-可见透射光谱仪测量了对靶磁控溅射沉积法制备的氢化非晶硅(a-Si:H)薄膜的透射光谱和反射光谱.利用T/(1-R)方法来确定薄膜的吸收系数,进而得到薄膜的消光系数|通过拟合薄膜透射光谱干涉极大值和极小值的包络线来确定薄膜折射率和厚度的初始值,并利用干涉极值公式进一步优化薄膜的厚度值和折射率|利用柯西公式对得到的薄膜折射率进行拟合,给出了a-Si:H薄膜的色散关系曲线.为了验证该方法确定的薄膜厚度和光学常量的可靠性,将理论计算得到的透射光谱与实验数据进行了比较,结果显示两条曲线基本重合,可见这是确定a-Si:H薄膜厚度及光学常量的一种有效方法. 相似文献
64.
Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3(001) substrates grown by chemical solution deposition
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions. 相似文献