Unforeseen formation of 2-bromo-3-hydroxybenzaldehyde by bromination of 3-hydroxybenzaldehyde

Contrary to literature reports, bromination of 3-hydroxybenzaldehyde can afford both 2-bromo-5-hydroxybenzaldehyde and 2-bromo-3-hydroxybenzaldehyde, but 4-bromo-3-hydroxybenzaldehyde was not detected. 2-Bromo-3-hydroxybenzaldehyde was converted into 2-(benzyloxy)-1-bromo-5-methoxy-7-methylnaphthalene. X-ray crystallographic analysis supports the identity of 2-bromo-3-hydroxybenzaldehyde.     

Sensitivity analysis of an optimized bar-spring model with hill-top branching

Summary Characteristics of optimal solutions under nonlinear buckling constraints are investigated by using a bar-spring model. It is demonstrated that optimization under buckling constraints of a symmetric system often leads to a structure with hill-top branching, where a limit point and bifurcation points coincide. A general formulation is derived for imperfection sensitivity of the critical load factor corresponding to a hill-top branching point. It is shown that the critical load is not imperfection-sensitive even for the case where an asymmetric bifurcation point exists at the limit point.     

Application of a generalized residual model to frequency domain modal parameter estimation

Residuals have long been used in frequency domain parameter estimation methods to model the influence of out-of-band modes but, typically, as a fixed set of no more than two or three terms. Recently, a systematic approach to the use of residual polynomials has led to the development of a generalized residual model. The use of a generalized residual model with rational fraction polynomial frequency domain parameter estimation methods allows the contribution of out-of-band modes to be included without increasing the model order and creating additional computational poles. Of particular interest is the use of the generalized residual for single-degree-of-freedom (s.d.o.f.) techniques, which generally do not consider the residual effects and suffer accordingly. With the use of generalized residuals, it becomes possible to properly account for nearby modes and also extract accurate residues with an s.d.o.f. algorithm. The development of the generalized residual polynomial model is outlined and a new s.d.o.f. frequency domain algorithm with generalized residuals is developed.     

Examination of photoproducts in the ablation plume of doped PMMA

Optical emission and laser-induced fluorescence spectroscopies (OES and LIF) are employed to examine the plume ejected into vacuum upon UV pulsed laser ablation (248 nm, 20 ns, and 266 nm, 5 ns) of poly(methyl methacrylate) PMMA films doped with photostable compounds naphthalene (NapH) and phenanthrene (PhenH), and their photolabile iodide derivatives iodonaphthalene (NapI) and iodophenanthrene (PhenI). Spontaneous emissions observed in the irradiation of NapI and PhenI sensitised films can be assigned to excited products resulting from photodissociation of the dopants and to excited C₂, CH, and CN radicals. The presence in the plume of ground state products is revealed by LIF upon excitation at 266 nm. Measurements of the dependence of the spontaneous and LIF emissions on distance to the surface, ablation fluence, and flight velocities of species are discussed with reference to the mechanistic implications derived from the measurements. PACS 52.38.Mf; 61.82.Pv; 82.50     

Mechanisms of n‐butanol formation in butyl acrylate latexes

The mechanisms involved in the formation of n‐butanol during the synthesis of butyl acrylate containing latices were investigated. The experimental results showed that neither the hydrolysis of butyl acrylate nor of the ester bond in the butyl acrylate segments of the polymer played a major role in the formation of n‐butanol, which was mainly generated from the polymer backbone, by transfer reactions to polymer chain followed by cyclization. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5838–5846, 2007     

A case of concomitant polymorphism and spontaneous resolution: the tetragonal phase of 5‐hydroxymethyl‐7,7,N‐trimethyl‐6‐oxabicyclo[3.2.1]octane‐1‐carboxamide

The title compound, C₁₂H₂₁NO₃, crystallizes in two polymorphic forms, viz. the tetragonal form described here and the monoclinic form described previously [Foces‐Foces, López‐Rodríguez, Pérez, Martín & Pérez‐Hernández (2007). Cryst. Growth Des. 7 , 905–911]. The differences in the conformations of the hydroxymethyl and methylaminocarbonyl substituents have important consequences in the hydrogen‐bond interaction motifs and, therefore, in the packing arrangements. These forms are concomitant polymorphs with melting points differing by 3 K.     

Photoluminescent properties and Raman spectra of ZnO-based scintillating glasses

Glasses in SiO₂–ZnO–BaO system with the different ZnO/BaO ratio were studied. In some cases, BaF₂ was introduced to substitute for BaO on the equal base. Photoluminescent spectra showed that ZnO in glass matrices behaved somewhat differently from ZnO crystals. Especially, the introduction of fluorine ions led to dramatic shift of UV emission band of glasses closer to that of ZnO crystals. Raman spectral analysis provided consistent results. In particular, Raman bands in the high frequency region are sensitive to effects of different ZnO/BaO or BaF₂/BaO ratio on structure of glasses.     

Doping of KDP single crystals with cerium: Growth and optical properties

The features of doping of KDP crystals with cerium ions and organocerium complexes with alizarin complexon and arsenazo III have been investigated. It is established that “direct” doping by introducing cerium salts into the initial solution cannot be implemented. The effect of organometallic complexes of cerium on the crystal growth has been studied. Organocerium complexes predominantly enter the prismatic or pyramidal growth sectors. It is shown that the complex arsenazo III + Ce blocks the growth of the prismatic sector. Cerium-doped KDP crystals exhibit a photoluminescence band peaking at the wavelength λ_max= 350 nm.     

The kinetics of the light-induced defect creation in hydrogenated amorphous silicon – Stretched exponential relaxation

Our model for light-induced defect creation in hydrogenated amorphous silicon is applied to its kinetics, i.e., the growing curve of light-induced dangling bond density as a function of illumination time, which is fitted to a stretched exponential function. Two parameters β and τ involved in the function are estimated as functions of saturated dangling bond density in terms of our model. These are compared with two experimental results, i.e., our results obtained from ESR measurements and Shimakawa et al.’s results obtained from photoconductivity measurements. The saturated dangling bond density is also measured as a function of the generation rate of free carriers. The experimental results are compared with calculated results and discussed.     

Dislocation model of a nanotwin

We propose a dislocation model of a nanotwin, which is used to calculate the stress fields in the nanotwin. We consider the role of these stresses in the process of interdislocation interaction and nanotwin growth.