Analysis of photocurrent spectra at polybithienyl film coated on Pt

Photoelectrochemical measurements have been performed at a polybithienyl (PBT) film (doping level of 1 × 10¹⁸/cm³) deposited on a platinum electrode. The cathodic photocurrents and negative slope of the Mott-Schottky plot indicate that the PBT film has the features of a p-type semiconductor. The cathodic photocurrents are interpreted in terms of the Gaertner-Butler model on the basis of the theory of the semiconductor|solution interface. The (i _ph hν)^2/n vs. hν plots taken from the photocurrent spectra show two linearities for n=1 in the wavelength range from 460 nm to 490 nm and for n=4 in the wavelength range λ > 490 nm. The band gaps of the PBT film were determined to be 2.05 ± 0.05 eV for n=1 and 1.55 ± 0.05 eV for n=4. The flat-band potential is 0.33 V (vs SCE). From the slope of the Mott-Schottky plot at the modulation frequency of 3 kHz, the dielectric constant ɛ of the film and the thickness of the depletion layer W ₀ of the PBT film were determined to be 7.4 and 0.29 μm, respectively. Received: 6 January 1999 / Accepted: 6 June 1999     

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Synthese und Halbleitereigenschaften von phthaloeyaninartigen Polymeren mit Tetrathiafulvalen-Einheiten

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Electrical conductivity of partly oxidized aromatic and heteroaromatic polymers

The electrical conductivity of aromatic and heteroaromatic polymers as well as polymers with aromatic, heteroaromatic and vinylene units in the main chain, can be enhanced by oxidation. In a single electron transfer reaction, a polymer with a salt structure (“doped polymer”) can be formed. Such polymers can also be prepared in a one-step reaction from low-molecular weight compounds by oxidants, as well as by electrochemical reaction. Electrochemically produced samples have higher electrical conductivities (as high as 6298K = 0,5 Ω⁻¹ · cm⁻¹) than samples made by chemical oxidation from the same starting material.