Approximation of solutions of operator-differential equations by operator polynomials

We prove theorems that characterize the classes of functions whose best approximations by algebraic polynomials tend to zero with given order. We construct approximations of solutions of operator-differential equations by polynomials in the inverse operator. Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 50, No. 11, pp. 1506–1516, November, 1998.     

Asymptotic behavior of neutron small-angle multiple scattering spectra

The asymptotic behavior of the spectra for large values of the scattering vector for the case of elastic multiple small-angle neutron scattering (SANS) is investigated theoretically and experimentally. An expansion of the spectrum in terms of the reciprocal of the magnitude of the momentum transfer is obtained taking account of the influence of the instrumental line. It is shown that, to within some factor, the leading term of the expansion is identical to the differential single-scattering cross section averaged over a statistical ensemble of particles; several subsequent terms in the expansion are calculated and the range of applicability of the resulting expressions is determined. The asymptotic behavior of the multiple SANS spectrum is measured, using a two-crystal neutron spectrometer, for samples of an HTSC ceramic, the alloy Fe-Ni, and Al powder. The agreement between the experimental results and the theoretical predictions is analyzed. Zh. éksp. Teor. Fiz. 114, 2194–2203 (December 1998)     

Phase transitions in silicon single crystals resulting from directional plastic deformation

The formation of polytypic modifications is observed in dislocation-free silicon single crystals under directional plastic deformation. It is shown that the deformation-stimulated phase appears on the surface of the sample in the form of small grains ranging from several hundred to several thousand angstroms in size. A twin structure in the individual grains is observed. Fiz. Tverd. Tela (St. Petersburg) 40, 746–749 (April 1998)     

Determination of the surface potential of a dielectric layer on a target bombarded by an ion beam

The electric field at the surface of a charge spot created by an ion beam on a dielectric coating of a target is calculated. An expression is obtained which relates the surface potential of the insulator to the potential of the collector corresponding to saturation of the collector secondary-electron current. It permits determination of the potential drop across the oxide layer of a cold cathode without introducing complications in the construction of the experimental apparatus. Zh. Tekh. Fiz. 68, 126–128 (September 1998)     

Influence of composition and annealing on the criteria of superparamagnetism and the interaction of particles in granular electrolytically deposited films of CuCo

Films of nonuniform Cu_100−xCo_x alloys with x = 6, 11, 20, and 35 at. %, obtained by electrolytic deposition, are investigated using quantum magnetometry in fields of up to 5.5 T and temperatures of 2–300 K. In all the compositions a characteristic feature is the deviation from pure superparamagnetic behavior, which increases as the annealing of the films and their cobalt content increase. Institute of Solid State and Semiconductor Physics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 60–62, March, 1998.     

Effect of hydrogen on the current-voltage characteristics of tunneling mis diodes based on gallium arsenide

Results are presented for experimental studies of the static current-voltage characteristics of tunneling MIS diodes based on n-type gallium arsenide. It is shown that the forward branch of the current-voltage characteristics can be used to determine the dependence of the surface potential at the dielectric-semiconductor interface on the voltage and the distribution of the surface state density over energy in the forbidden band. The results of studies of these dependences for diodes prepared by thermal annealing at various temperatures are given. The possible causes of changes in the forward and reverse current, and the dependence of the surface potential on the voltage and distribution of surface state density in energy under the action on the diodes of a gaseous mixture containing hydrogen are analyzed. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 69–83, January, 1998.     

Duality in two-dimensional Z(N)-symmetric spin models on a finite lattice

We propose a method for deriving duality relations for two-dimensional inhomogeneous Z(N)-symmetric models on a finite square lattice wound around a torus. The method is used to obtain duality relations for the vector Potts model, the Berezinskii-Villain Z(N)-model, the Ashkin-Teller model, and the 8-vertex model on a lattice obliquely wound around a torus, as well as an exact relation linking the partition functions of the latter two models. Zh. éksp. Teor. Fiz. 113, 240–260 (January 1998)     

The antiferromagnetic-ferromagnetic transition in the system Zn1−x CuxCr2S4

The magnetization and paramagnetic susceptibility of the system of compounds Zn_1−x Cu_xCr₂S₄ (0<x⩽1) are investigated at low temperatures. It is shown that as the content of Cu increases the system exhibits a transition from an antiferromagnetic to a ferromagnetic state. Fiz. Tverd. Tela (St. Petersburg) 40, 278–279 (February 1998)     

Distinctive features of time-resolved photoluminescence of porous silicon coated with a layer of diamondlike carbon

Time-resolved photoluminescence from porous silicon coated with a diamondlike carbon film is investigated. The intensity of the photoluminescence from the carbon film is obserd to increase after deposition, and there is an accompanying change in the intensity and a shortwavelength shift of the photoluminescence band of porous silicon that depends on the porosity of its original layers. These changes are explained by the formation of carbon nanoclusters on the surface of the silicon filaments. Zh. Tekh. Fiz. 68, 83–87 (April 1998)     

Dynamics of nanodefects on a loaded gold surface

The dynamics of defects with linear dimensions from ≈1 to ≈100 nm on a Au surface under load have been studied by means of tunnelling microscopy. It is found that the origin, growth, and resorption of the defects is caused by displacements of bands of material from 5 to 50 nm wide, parallel to the {111} slip planes. The defects can be separated into two groups: nonsteady-state defects, whose lifetime does not exceed 15 min, while the depth is ⩽20 nm, and quasi-steady-state defects, with a lifetime three orders of magnitude greater than the first. It is assumed that the nonsteady-state defects are formed when the ensemble of dislocations is being reconstructed, while the quasi-steady-state defects are formed at the instant of formation of dislocation substructures during the creep of the loaded metal. Fiz. Tverd. Tela (St. Petersburg) 40, 2180–2183 (December 1998)