Protolytic reactions of 3,3'-dimethylnaphthidine and 3,3'-dimethoxybenzidine

The dissociation constants of diprotonated 3,3'-dimethylnaphthidine (DMN) and 3,3'-dimethoxybenzidine (DMB) have been determined spectrophotometrically. They are: pK(a1) = 2.62 +/- 0.03, pK(a2) = 3.33 +/- 0.09 for DMN: pK(a1) = 2.83 +/- 0.07, pK(a2) = 4.05 +/- 0.12 for DMB. The molar absorptivities (l.mole(-1).cm(-1)) of all forms of the indicators have been also determined: epsilon(B) = 1.68 x 10(4), epsilon(BH(+)) = 9.34 x 10(3), epsilon(BH(2+)(2)) = 1.80 x 10(3) at 300 nm for DMB; epsilon(B) = 7.33 x 10(3), epsilon(BH(+)) = 3.73 x 10(3), epsilon(BH(2+)(2)) = 0 at 330 nm for DMN.     

Two-dimensional model of elastically coupled molecular motors

A flashing ratchet model of a two-headed molecular motor in a two-dimensional potential is proposed to simulate the hand-over-hand motion of kinesins.Extensive Langevin simulations of the model are performed.We discuss the dependences of motion and efficiency on the model parameters,including the external force and the temperature.A good qualitative agreement with the expected behavior is observed.     

Optical planar waveguides in Yb³⁺-doped phosphate glasses produced by He⁺ ion implantation

Optical planar waveguides in Yb 3+-doped phosphate glasses are fabricated by implanting triple-energy helium ions. The guiding modes and the near-field intensity distribution are measured by using the prism-coupling method and the end-face coupling setup with a He-Ne laser at 633 nm The intensity calculation method (ICM) is used to reconstruct the refractive index profile of the waveguide. The absorption and the fluorescence investigations reveal that the glass bulk features are well preserved in the active volumes of the waveguides, suggesting the fabricated structures for possible applications as waveguide lasers.     

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future.     

Effect of the nonlinearity of the CCD in Fourier transform profilometry on spectrum overlapping and measurement accuracy

In Fourier transform profilometry (FTP), we must restrain spectrum overlapping caused by the nonlinearity of the charge coupled device (CCD) and increase the measurement accuracy of the object shape. Firstly, the causes of producing higher-order spectrum components and inducing spectrum overlapping are analysed theoretically, and a simple physical explanation and analytical deduction are given. Secondly, aiming to suppress spectrum overlapping and improve measurement accuracy, the influence of spatial carrier frequency of projection grating on them is analysed. A method of increasing the spatial carrier frequency of projection grating to restrain or reduce the spectrum overlapping significantly is proposed. We then analyze the mechanism of how the spectrum overlapping is reduced. Finally, the simulation results and experimental measurements verify the correction of the proposed theory and method.     

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.     

Designing shielded radio-frequency phased-array coils for magnetic resonance imaging

In this paper, an approach to the design of shielded radio-frequency (RF) phased-array coils for magnetic resonance imaging (MRI) is proposed. The target field method is used to find current densities distributed on primary and shield coils. The stream function technique is used to discretize current densities and to obtain the winding patterns of the coils. The corresponding highly ill-conditioned integral equation is solved by the Tikhonov regularization with a penalty function related to the minimum curvature. To balance the simplicity and smoothness with the homogeneity of the magnetic field of the coil’s winding pattern, the selection of a penalty factor is discussed in detail.     

Calculation of the photoelectron spectra under a scaling transform

By solving the time-dependent Schro¨dinger equation, the dependence of photoelectron energy spectra on the binding energy of targets, wavelength and the intensity of laser pulse is exhibited and a scaling law of kinetic energy spectra of both the direct and the rescattered photoelectrons is concluded. The scaling law provides a convenient tool to determine the equivalent photoionization process of various atoms or molecules in various laser fields. The verification of the scaling law by independent methods provides incontestable support to the validity of the scaling law.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.