BeH2材料的制备及在ICF中的应用

 简述了BeH_{2材料的制备方法、结构形式和物理化学性质，并分析了其在惯性约束聚变(ICF)中的应用。BeH2材料主要由二叔丁基铍热解法和元素化学气相沉积法制备，其纯度(质量分数)高达99%。非晶BeH2材料的结构是一种共用氢原子作为顶点的BeH4四面体网络结构。非晶BeH2材料不仅具有铍的优点，还具有聚合物的优点，作为ICF靶可以降低瑞利-泰勒不稳定性，而且掺入高Z元素后还可以降低D-T燃料的预热。非晶BeH2材料作为烧蚀层，掺入高Z元素后可以提高激光-X光的转换效率。}     

平面火花隙三电极开关研制及性能测试

 研制了一种适用于平行板传输连接的平面火花隙三电极开关，开关正负电极为半圆形状，触发电极为细条状。将之替代立体式（半球形电极）火花隙三电极开关并应用于爆炸箔起爆装置中，装置回路参数将得以优化。实验测试了空气间隙为4.12， 3.14和2.2 mm的平面火花隙三电极开关的性能。结果表明，在开关间隙间距一定的情况下，随着电压的升高，开关间隙的放电时延和分散时间呈指数降低，开关电感小于15 nH；对于不同范围内的应用电压，使用不同间隙间距的开关，其分散时间不大于10 ns。该开关应用于较低充电电压（小于10 kV）的脉冲功率装置中，与立体式火花隙三电极开关相比，回路电感降低了约50 nH，放电周期缩短近1/3，峰值电流增加约1/3。     

直接置换法制备包覆型纳米铜-银双金属粉末

 以AgNO₃为主盐,采用直接置换法初步制备了包覆型纳米铜-银双金属粉末,分析了工艺条件对包覆效果的影响,并用透射电子显微镜、X射线能量色散谱仪和X射线衍射仪进行了表征。实验结果表明：纳米铜-银双金属粉末为包覆型结构,平均粒径约70 nm,分散性较好,表面银的原子分数达到74.28%。在洗涤过程中加入一定量的保护剂,有效解决了纳米铜粉的氧化问题。     

溅射功率对直流磁控溅射Ti膜结构的影响

 采用直流磁控溅射方法制备了纯Ti膜,研究了不同功率下Ti膜的沉积速率、表面形貌及晶型结构,并对其应力进行了研究。研究表明：薄膜的沉积速率随溅射功率的增加而增加,当溅射功率为20 W时,原子力显微镜(AFM)图像显示Ti膜光洁、致密,均方根粗糙度最小可达0.9 nm。X射线衍射(XRD)分析表明薄膜的晶体结构为六方晶型,Ti膜应力先随溅射功率增大而增大,在60 W时达到最大值（为945.1 MPa）,之后随溅射功率的增大有所减小。     

银溶胶吸附的维酶素的表面增强共振拉曼散射

获得了银溶胶吸附的维酶素的表面增强共振拉曼散射光谱(SERRS)。维酶素的水溶液加到银胶中形成银胶—维酶素络合物,可使吸收谱带在440—650nm范围出现。维酶素的组分与银溶胶发生了竞争结合,而维酶素的FAD在竞争中占优势,故吸附在银溶胶表面的维酶素的SERRS实际上是FAD的异咯嗪和腺嘌呤二核苷酸的振动光谱。在维酶素中FAD作为辅基与蛋白质相连,它与蛋白质相互作用使其拉曼谱线发生3—8cm~(-1)位移。因此SERRS技术对带发色团的蛋白质结构的研究很有用处。     

激光等离子实验中的低能X射线时间谱解谱方法

利用快速Fourier变换(FFT)算法和反卷积原理对Dante谱议测量波形进行了回推获得了激光等离子体源区低能X射线辐射时间波形。解谱方法采用了W.N.Mcelroy等人提出的SANDⅡ解谱方法并与文献[6]中介绍的限幅迭代和周期性光滑技术相配合计算出了能谱时间关系的16分区结果,给出了1989年6月LF-12强激光装置实验的双束靶、漏靶诊断口,入射口的X射线时间谱以及辐射温度时间关系T_R(i)。     

Research on the ions' axial temperature of a sympathetically-cooled 113Cd+ ion crystal

Molecular dynamics simulation of a sympathetically-cooled ¹¹³Cd⁺ ion crystal system is achieved. Moreover, the relationship between ions' axial temperature and different electric parameters, including radio frequency voltage and end-cap voltage is depicted. Under stable trapping condition, optimum radio frequency voltage, corresponding to minimum temperature and the highest cooling efficiency, is obtained. The temperature is positively correlated with end-cap voltage. The relationship is also confirmed by a sympathetically-cooled ¹¹³Cd⁺ microwave clock. The pseudo-potential model is used to illustrate the relationship and influence mechanism. A reasonable index, indicating ions' temperature, is proposed to quickly estimate the relative ions' temperature. The investigation is helpful for ion crystal investigation, such as spatial configuration manipulation, sympathetic cooling efficiency enhancement, and temporal evolution.     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.