Quantum phase transitions of fermionic atoms in an anisotropic triangular optical lattice

The effect of anisotropy caused by a confining potential on the properties of fermionic cold atoms in a triangular optical lattice is systematically investigated by using the dynamical cluster approximation combined with the continuous time quantum Monte–Carlo algorithm.The quantum phase diagrams which reflect the temperature–interaction relation and the competition between the anisotropic parameter and the interaction are presented with full consideration of the anisotropy of the system.Our results show that the system undergoes a transition from Fermi liquid to Mott insulator when the repulsive interaction reaches a critical value.The Kondo effect also can be observed in this system and the pseudogap is suppressed at low temperatures due to the Kondo effect.A feasible experiment protocol to observe these phenomena in an anisotropic triangular optical lattice with cold atoms is proposed,in which the hopping terms are closely related to the lattice confining potential and the atomic interaction can be adjusted via the Feshbach resonance.     

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Single crystalline GaN nanoribbons were synthesized through nitriding Ga₂O₃ thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively.     

Long-period-grating-assisted optical add-drop filter based on mismatched twin-core photosensitive-cladding fiber

A noninterferometric optical fiber add-drop channel filter based on a mismatched twin-core photosensitive-cladding fiber and long-period fiber grating is demonstrated. With assistance from the fiber grating, co-directional spectrally selective cross coupling between the two cores can be realized with an efficiency of 90%.     

等温结晶化条件对氟化孔洞聚丙烯膜电荷稳定性的显著影响

基于开路热刺激放电电流和电荷等温衰减测量系统地研究了等温结晶化条件对氟化孔洞聚丙烯(PP)膜电荷稳定性的影响.结果表明等温结晶化温度和时间对氟化PP膜的电荷稳定性或电荷陷阱的构造具有显著的影响,即使90 ℃,0.5 h的等温结晶化处理也能显著地加深其电荷陷阱、改善电荷的稳定性.而且随着等温结晶化温度的提高和时间的延长,电荷陷阱进一步被加深、电荷稳定性进一步被改善,如130 ℃,2 h以上的等温结晶化情形.衰减全反射红外分析和宽角X射线衍射分析表明,电荷稳定性的改善归因于PP膜的组成和结构变化.     

波前延拓剪切干涉的数学原理与数值模拟

从数值方法的角度分析了常规剪切干涉存在的缺陷,通过数学原理和数值分析方法提出波前延拓剪切干涉,并证明了它的可行性及其对常规剪切干涉缺陷的克服。最后用数值方法模拟了波前恢复过程。     

环程光程随机扰动时光纤环形腔的有效带宽

对由环境引起的环程光程扰动对光纤环形腔的影响作了详细的理论分析,在扰动为各态历经扰动假设下的理论分析表明：小的慢与快变化扰动的影响是不同的。慢变化扰动影响与人射光时间相干性相同,使有效带宽增大;而快变化扰动对有效带宽的影响很小。然而对大的慢或快变化扰动,都会使环形腔失去它的带通和带阻特性。实验结果证实了一结论。     

Recommendation in evolving online networks

Recommender system is an effective tool to find the most relevant information for onlineusers. By analyzing the historical selection records of users, recommender system predictsthe most likely future links in the user-item network and accordingly constructs apersonalized recommendation list for each user. So far, the recommendation process ismostly investigated in static user-item networks. In this paper, we propose a model whichallows us to examine the performance of the state-of-the-art recommendation algorithms inevolving networks. We find that the recommendation accuracy in general decreases with timeif the evolution of the online network fully depends on the recommendation. Interestingly,some randomness in users’ choice can significantly improve the long-term accuracy of therecommendation algorithm. When a hybrid recommendation algorithm is applied, we find thatthe optimal parameter gradually shifts towards the diversity-favoring recommendationalgorithm, indicating that recommendation diversity is essential to keep a high long-termrecommendation accuracy. Finally, we confirm our conclusions by studying therecommendation on networks with the real evolution data.     

Universal scheme for finite-probability perfect transfer of arbitrary multispin states through spin chains

In combination with the theories of open system and quantum recovering measurement, we propose a quantum state transfer scheme using spin chains by performing two sequential operations: a projective measurement on the spins of ‘environment’ followed by suitably designed quantum recovering measurements on the spins of interest. The scheme allows perfect transfer of arbitrary multispin states through multiple parallel spin chains with finite probability. Our scheme is universal in the sense that it is state-independent and applicable to any model possessing spin–spin interactions. We also present possible methods to implement the required measurements taking into account the current experimental technologies. As applications, we consider two typical models for which the probabilities of perfect state transfer are found to be reasonably high at optimally chosen moments during the time evolution.     

A Bandpass Filter Based on Dielectric Layers with a Strip Conductor Subwavelength Grating at Their Interfaces

Doklady Physics - The design of a multilayer bandpass filter has been investigated, in which each of the half-wavelength resonators consists of two dielectric layers with outer strip conductor...     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.