Transformation of a hollow Gaussian beam into a ring-shaped beam using a phase aperture

Propagation of a hollow Gaussian beam diffracted by a circular phase aperture is studied without making the paraxial approximation. The analytical expression of the intensity of the apertured hollow Gaussian beam is presented in the far field. The influences of the truncation parameter and the order of hollow Gaussian beam on the intensity distributions are discussed. It is shown that a circular ?-phase aperture can be used to transform a hollow Gaussian beam into a ring-shaped beam in the far field with the appropriate parameters.     

Propagation of a pair of vortices through a tilted lens

The propagation of a pair of vortices nested in a Gaussian beam through a tilted lens is studied. It is shown that after passing through the tilted lens, the relation between the transverse position of vortices and the tilt coefficient is linear in the propagation for isopolar vortex pair and vortex dipole, and in the three-dimensional (3D) case the vortex trajectories are sometimes like U or X shapes. With increasing the orientation angle of the vortex pair, the trajectories of vortices are circles for the both cases. The overlap of vortices may take place for the isopolar vortex pair, while the annihilation and revival of vortices occur for the vortex dipole in the propagation.     

基于Add-drop型微环谐振腔的硅基高速电光调制器设计

相比于传统的All-pass型微环谐振腔硅基电光调制器, Add-drop型微环谐振腔可提供更多的设计自由度, 使调制器在不改变杂质掺杂浓度的情况下就能在调制带宽和消光比性能上获得均衡考虑. 本文设计了基于Add-drop型微环谐振腔的高速、且在低调制电压下实现大消光比的硅基电光调制器, 所用微环谐振腔的半径仅仅为20 μm. 重点分析了直波导与微环谐振腔的耦合对调制器性能的影响, 发现较小的Drop端耦合系数有利于消光比的提高, 但是不能同时达到最佳的调制带宽, 因此设计上存在一个带宽和消光比性能上的折中考虑. 根据优化设计的结果进行了实际器件的制作和测试. 静态光谱测试表明, 在3 V反向偏置电压的作用下, 调制器的消光比最大可达12 dB. 动态电光响应测试中, 在仅仅1.2 V的信号幅值电压下测得了8 Gbps数据传输速率的清晰眼图. 关键词： 电光调制器 绝缘体上的硅 微环谐振腔 载流子色散效应     

脉冲敲击技术对PI微球表面粗糙度的影响

作为点火靶重要候选靶丸之一, 聚酰亚胺 (PI) 空心微球采用降解芯轴技术结合双单体气相沉积聚合法 (VDP) 制备. 在PI涂层过程中微球碰撞对表面质量影响较大, 为了减小碰撞提高表面质量, 选用筛网盘做样品盘, 激励方式由压电振动模式改为脉冲敲击模式进行对比. 实验数据表明微球运动过程中碰撞是引起表面质量变差的原因, 通过理论分析确认了筛网盘通过减少接触点可以减少微球与微球间、微球与样品盘间的碰撞, 并且将压电振动改为脉冲敲击模式可以减小微球碰撞次数. 脉冲敲击模式与压电振动模式相比, 其可控性、微球弹跳幅度、消除静电等方面均优于压电振动. 对于微球壁厚均匀性而言, 压电振动略好于脉冲敲击, 但相差较小. 单个微球的壁厚最大偏差前者为0.68 μm, 优于后者的0.73 μm; 单个微球壁厚平均值在同一批次内的最大起伏, 前者为0.26 μm, 优于后者0.57 μm. 白光干涉仪数据显示脉冲敲击起到了提高微球表面质量的作用, 其表面粗糙度Rq值由52–93 nm 减小到28–44 nm. 关键词： 脉冲敲击技术 聚酰亚胺靶丸 表面粗糙度 壁厚均匀性     

基于互补屏的极化分离结构设计研究

以互补频率选择表面 (CFSS)结构的强耦合作用为基础, 设计一种具有极化分离作用的频率选择表面 (PSS), 当容性表面与感性表面沿周期排布方向具有横向位移时, CFSS成为具有TM带通、TE带阻的极化分离结构. 建立等效电路模型分析PSS结构极化分离原理, 采用耦合积分方程法计算极化分离结构的传输特性以及容性表面和感性表面的电场分布. 理论分析与实验测试结果均表明: PSS具有良好的极化分离特性和角度稳定性, 为极化波产生器和极化分离结构的设计提供借鉴. 关键词： 频率选择表面 极化选择 互补屏频率选择表面     

基于高/多光谱图像空天一体融合仿真方法

提出了一种基于高/多光谱图像的空天一体融合仿真方法. 以航空高光谱数据为基础, 根据航天多光谱遥感相关参数, 通过空天一体光谱维变换、尺度空间变换、辐射强度变换、混合像素变换和噪声变换将 航空高光谱图像中的地物目标进行空天一体映射到航天多光谱图像中, 得到特定地物目标的航天多光谱融合模拟仿真图像. 仿真实验表明该方法简便易行, 有效地减少了地物目标的三维建模和探测器响应建模的巨大工作量, 较好地实现了对特定地物目标航天多光谱图像的模拟, 开拓了遥感图像仿真模拟方法的新领域, 具有重要的研究和应用价值. 关键词： 遥感图像 空天一体 融合仿真 光谱维变换     

液滴振荡模型及与数值模拟的对比

由于碰撞壁面后液滴内部流动的复杂性, 以及气-液-固三相间的相互作用, 对液滴碰撞壁面形态变化的数学理论研究有较大的难度, 因此所见者多为实验和数值模拟. 本文通过对液滴受力状态的分析, 得到了惯性力、黏性力和表面张力带经验系数的表达式, 并进一步建立了液滴碰撞壁面振荡模型, 得到了液滴铺展半径的振荡表达式, 以及表面张力、黏性系数等参数对液滴铺展的影响. 最后通过与液滴衰减振荡数值模拟结果的对比, 确定了液滴振荡模型中的修正系数, 验证了模型的可行性. 关键词： 液滴碰撞 振荡 铺展半径/高度 数值模拟     

Effect of aluminum co-doping on the formation of Yb2+ in Ytterbium-doped high silica glass

Yb3+ singly doped and Yb3+/Al3+ co-doped high silica glass samples are prepared,and their luminescent properties are investigated.Al3+ is considered as a beneficial activator for Yb3+-doped glass.However,the experimental result shows that the addition of Al3+ results in the transformation from Yb3+ to Yb2+ and the improvement in the photon luminescence of Yb2+.These characteristics indicate the role of Al3+ in Yb3+-doped glass.     

Diode-Side-Pumped Passively Q-Switched Mode-Locked 532 nm Laser with a Nd:YAG/Cr4+:YAG/YAG Composite Crystal

We present a diode-side-pumped Q-switched mode-locked (QML) laser operating at 532 nm for the first time employing a composite crystal Nd:YAG/Cr⁴⁺:YAG/YAG and a KTP. The experimental results show that, using a suitable cavity and crystals, one can obtain high-quality QML laser output at 532 nm with a side-pumped system. We measure and analyze the QML performance of the fundamental frequency laser and the green laser. Under a pump power of 127 W, we obtain a QML laser operating at 532 nm with an average power of 4.97 W and a repetition rate of 0.2 GHz for the mode-locked pulses; the corresponding depth of modulation is close to 100%.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.