Stress induced preferred orientation and phase transition for ternary WCxNy thin films

We deposit ternary WC_xN_y thin films on Si (1 0 0) substrates at 500 °C using direct current (DC) reactive magnetron sputtering in a mixture of CH₄/N₂/Ar discharge, and explore the effects of substrate bias (V_b) on the intrinsic stress, preferred orientation and phase transition for the obtained films by virtue of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and selective area electron diffraction (SAED). We find that with increasing the absolute value of V_b up to 200 V the carbon (x) and nitrogen (y) atom concentrations of WC_xN_y films keep almost constant with the values of 0.75 and 0.25, respectively. The XPS and SAED results, combined with the density-functional theory (DFT) calculations on the electronic structure of WC_0.75N_0.25, show our obtained WC_xN_y films are single-phase of carbonitrides. Furthermore, we find that the compressive stress sharply increases with increasing the absolute value of V_b, which leads to a pronounced change in the preferred orientation and phase structure for the film, in which a phase transition from cubic β-WC_xN_y to hexagonal α-WC_xN_y occurs as V_b is in the range of −40 to −120 V. In order to reveal the relationship between the stress and phase transition as well as preferred orientation, the DFT calculations are used to obtain the elastic constants for β-WC_xN_y and α-WC_xN_y. The calculated results show that the preferred orientation is dependent on the competition between strain energy and surface energy, and the phase transition can be attributed to a decrease in the strain energy.     

Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon

Strain-compensated Ge/Si_0.15Ge_0.85 multiple quantum wells were grown on an Si_0.1>Ge_0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n⁺-Si(001) substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.     

Electronic transport properties of zigzag carbon- and boron-nitride-nanotube heterostructures

Using first-principles density functional theory and non-equilibrium Green's function formalism for quantum transport calculation, we have investigated the electronic transport properties of heteronanotubes by joining a zigzag (6,0) carbon nanotube and a zigzag (6,0) boron nitride nanotube with different atomic compositions and joint configurations. Our results show that the atomic composition and joint configuration affect strongly the electronic transport properties. Obvious negative differential resistance behavior and large rectifying behavior are obtained in the heterostructure with certain composition and joint configuration. Moreover, tube length and tube radius can affect strongly the observed NDR and rectifying behaviors. The observed negative differential resistance and rectifying behaviors are explained in terms of the evolution of the transmission spectrum with applied bias combined with molecular projected self-consistent Hamiltonian states analysis.     

Multi-stacked organic light-emitting diodes using zinc oxide nanoparticle interfacial layers

Stacked organic light-emitting diodes (SOLEDs) with 30-nm nanoparticle (NP) interfacial layers were investigated. Zinc oxide (ZnO) was used as an interfacial layer between two green polymer (GP) layers. SOLEDs with NP interfacial layers had higher device efficiency than did a single-unit device due to the high probability of exciton recombination that originated from the Auger electron-assisted energy up-conversion process. Although the current density and luminance of SOLEDs with ZnO NP interfacial layers were smaller than those of the reference device, the efficiency was doubled because of the big band alignment difference and the large band gap between GP and ZnO NP interfacial layers, which induced more radiative-exciton recombination.     

Quantum information splitting of an arbitrary three-qubit state via the cavity input–output process

We propose a realizable quantum information splitting (QIS) scheme for an arbitrary three-qubit state via the cavity input–output process. In our scheme, a four-qubit cluster state and a three-qubit Greenberger–Horne–Zeilinge (GHZ) state are used as quantum channel. The sender and controller only need to perform Bell-state measurements and a single-qubit measurement, respectively. The receiver can reconstruct the arbitrary three-qubit state by classical communication and local operations. Compared with the scheme in Nie et al. [Optics Communications 284 (2011) 1457], the quantum resources and classical information in our scheme are decreased by 5 qubits and 1 bit, respectively. Moreover, we replace the W-state category measurement in the former with Bell-state measurements and a single-qubit measurement, which is more simple and feasible in experiment.     

如何通过测量复摆的周期计算转动惯量

本文给出一种简约可行的方法,用来计算不规则物体绕任意轴转动时的转动惯量,同时,亦可定出质心轴位置.本文讨论的内容对教学有意义.     

电感耦合等离子体发射光谱法检测獭兔肉中的微量元素

研究了用电感耦合等离子体光谱法检测獭兔肉中多种微量元素的实验方法。实验表明,獭兔肉中多种微量元素在选定的最佳条件下能够可靠、准确测得,且精密度在0.59%—8.85%之间,回收率为96.5%—103.5%。该方法具有灵敏度高、干扰少、线性范围宽和多元素同时测定等优点,是科学工作者研究微量元素可行的方法之一;同时该方法准确、快速、简便,适用于同类样品的测定,结果令人满意。     

397 GHz斜注管互作用系统的设计模拟

斜注管是返波振荡器的一种,通过电子注的倾斜,电子距离慢波结构更近,高频场更强,耦合阻抗和互作用效率更高,显著增加输出功率。对带状注斜注管的互作用系统进行了设计,并首次将双排齿慢波结构应用于斜注管。利用电磁模拟软件和3D粒子模拟软件对设计的斜注管的色散曲线和场分布进行了分析,并对其注-波互作用进行了模拟,可以得到大于100 mW的输出功率以及50 GHz的调谐带宽。输出功率在370.5 GHz频点处处达到峰值2.3 W,电子注电压7.0 kV,注电流120 mA,聚焦磁场1.0 T。     

脉冲X射线剂量率测量不确定度分析

“强光一号”短脉冲高能X射线剂量率测量,主要包括脉冲射线总剂量与脉冲射线时间宽度的测量,前者采用热释光剂量计测量,后者采用PIN半导体探测器记录。根据不确定度传递数学模型,分析了影响X射线剂量和脉冲宽度测量结果的因素。针对“强光一号”短脉冲高能X射线测量,定量地给出了各种因素引入的测量不确定度,总剂量测量是影响剂量率测量准确性的决定性因素,其相对标准不确定度为25.1％,脉冲宽度测量不确定度为3.7％,剂量率测量扩展不确定度为50.8%,置信概率95%。     

An Overview of The Photoacoustic Phase Spectra of Rare Earth Complexes

Abstract

The photoacoustic(PA) amplitude and phase spectra of several kinds of rare earth (RE) complexes are reported and summarized briefly. It is observed that both the amplitude and phase spectra well characterize the different energy levels of the RE complexes. The phase angle of the RE complexes is associated with the relaxation time τ and the optical absorption coefficient β concerning with the π-π? transition and the f-f transitions, respectively. After individual detailed discussion of the phase spectra, a reasonable theoretical consideration is given to interpret the results.