Amplified low-repetition-rate fs pulsewidth measuring and DLA caused pulse broadening

Amplified low-repetition-rate fs pulse is generated with dye laser amplifier(DLA). The pulsewidth is measured with a computer-aided autocorrelator and the fs pulsewidth broadening caused by the dispersion of the DLA is analyzed. Furthermore, the autocorrelator introduced in this paper could be used as a low scanning autocorrelator to measure high-repetition-rate pulsewidth.     

自由基分子NH2υ2带CO激光磁共振σ谱的观测

采用高灵敏度,高分辨率激光磁共振光谱(LMR)方法在6μm谱段测量了自由基分子NH₂υ₂带的σ谱(△M_J=±1)。重复了前人已测过的谱,结果与之较好符合。并观测到了新谱,在14支激光谱线下共获得约115支塞曼(Zeeman)跃迁谱线,其中在6支激光谱线下新测得的谱线91支。     

沉积物中石英ESR测年功率饱和效应的初步研究

介绍了几组沉积物中石英ESR功率饱和效应的基础实验情况,认为在用石英进行ESR测年时,微波功率的选择是一个重要参数,它直接影响累积剂量(AD)的求取,从而严重影响测年结果。在某些特定的地质环境下(如黄土,海洋沉积物),采用比较高的微波功率,可从沉积物石英的E'心得到较老沉积物(大于50万年)可信的ESR年代。     

Light induced microstructure transformation in a-Si：H films

A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.     

Effects of sintering temperature and atmosphere on magnetism in Mn-doped TiO2 bulk samples

Magnetic properties have been investigated on Mn doped TiO₂(Ti_0.98Mn_0.02O₂) bulk samples prepared by solid state reaction, which were sintered at different temperature ranging from 450 ^°C to 900 ^°C in air and argon atmosphere, respectively. The results show that the magnetic properties were strongly dependent on the sintering temperature and atmosphere. For samples sintered in air, the magnetization initially increase with the increase of sintering temperature up to 600 ^°C and thereafter it decrease. While the magnetization of samples sintered in argon atmosphere decreases monotonically with the increase of sintering temperature. Furthermore, for samples sintered at 600 ^°C in air, the magnetic susceptibility exhibits a dominant Curie-Weiss behaviour and no magnetic transition is observed over the temperature range from 10 to 300 K. In contrast, for samples sintered in argon atmosphere, besides the magnetic transition near 45 K perhaps caused by Mn₃O₄, another magnetic transition appears near room temperature.     

基于幅频自校准的高精度LVDT模拟器设计

LVDT模拟器在航空发动机的测试系统中有着广泛的应用,针对传统模拟器中由于引入变压器导致精度低的缺点,从LVDT传感器原理出发,设计了一种幅频自校准方法,利用乘法型DAC芯片实现了电路合成模拟LVDT传感器的目的并克服了变压器的幅频响应,提高了LVDT模拟器在宽频率范围的仿真精度。该模拟器已成功应用于某型号发动控制系统的地面仿真测试系统中,达到了预期效果。     

Thermoelectric properties of CoSb3 with maize‐like structure

Maize‐like CoSb₃ powders were obtained via the chemical alloying method. After the consolidation of the nanopowder using hot press, the CoSb₃ compact shows a higher Seebeck coefficient and lower thermal conductivity. For the investigated CoSb₃, a ZT of 0.15 at 673 K is shown. Though the achieved ZT does not reach the optimal value (0.17 to 0.18) for pure CoSb₃, due to its lower electrical conductivity, the novel structure fabrication provides an interesting and promising approach to enhancing the thermoelectric performance. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

闪光X射线高速摄影荧光转换屏的设计和性质研究

本文描述了用于中间弹道高速摄影荧光转换屏的设计特点、性能测试和实验结果。文中讨论了Gd2O2S:Tb和(Zn,Cd)S对X射线的吸收系数、发光效率以及荧光光谱与变象管S-20阴极光谱灵敏度曲线相匹配的相关曲线;测试了转换屏的相对发光强度、分辨率及其余辉。实验证明本屏发光亮度比钨酸钙屏高60倍左右,屏分辩率达51p/mm,余辉时间为8μs,多幅摄影结果证明第一幅的图象对第二幅照片无“拖尾”现象,本屏已达到了中间弹道高速摄影转换屏的实用水平。     

膨胀的热的富重子夸克─胶子物质的双轻子产生的抑制

从完全核阻止的假定出发基于３＋１维ＲＨＥ研究了双轻子谱，并得到结论：如果在极端相对论性原子核碰撞中富重子的夸克－胶子物质真地产生了，那么随着初始重子密度的增加，在不变质量２ｍπ和１ＧｅＶ之间双轻子的产生将会显示出强烈的抑制，而且将有一个反常的峰出现在不变质量０．７５ＧｅＶ附近．这些预言可以在ＣＥＲＮ和Ｂｒｏｏｋｈａｖｅｎ即将开展的实验中得到检验．     

诊断中性束加速电源打火检测与保护电路的研究与设计

通过检测打火短路过程中产生较大的di/dt 和du/dt 来实现高压电源的打火短路保护。在研究了中性束加速电源控制和保护特点的基础上, 设计了诊断中性束加速电源在打火短路过程中的di/dt 和du/dt 的检测电路和相应的保护电路, 实现提前对加速器高压电源打火短路的保护。