Strength and equation of state of molybdenum triboride under 80 GPa pressure,using radial X-ray diffraction

The strength and equation of state of molybdenum triboride have been determined under nonhydrostatic compression up to 80?GPa, using an angle-dispersive radial X-ray diffraction technique in a diamond anvil cell (DAC). The RXD data yield a bulk modulus and its pressure derivative as K_0?=?342(6)?GPa with K₀′?=?2.11(17) at ψ?=?54.7°. Analysis of diffraction data using the strain theory indicates that the ratio of differential stress to shear modulus (t/G) ranges from 0.002 to 0.050 at pressures of 4–80?GPa. Together with theoretical results on the high pressure shear modulus, our results here show that molybdenum triboride sample under uniaxial compression can support a differential stress of ～10?GPa when it started to yield with plastic deformation at ～30?GPa. In addition, we draw a conclusion that MoB₃ is not a superhard material but a hard material.     

The high response organic ultraviolet photodetectors based on 2-TNATA as donor

Organic ultraviolet photodetectors (OUV-PDs) were fabricated utilizing 2-TNATA as an electron donor with Bphen and TPBi as electron acceptors. A high sensitivity of OUV-PDs to UV light was obtained in the range of 300–420 nm. The optimized OUV-PDs composed of Bphen as the acceptor offered a photocurrent density up to 336 µA/cm² at ?8 V with 365 nm UV light at a power of 1.2 mW/cm². The high response is attributed to the excellent electron transport ability of Bphen and the matched energy level between 2-TNATA and Bphen.     

Deterministic Assisted Clone of an Arbitrary Two- and Three-qubit States via Multi-qubit Brown State

We present two schemes for deterministic assisted clone(DAC) of an unknown two- and three-qubit entangled states with assistance via muti-qubit Brown state. In the schemes, the sender wish to teleport an unknown original entangled state which from the state preparer, and then create a perfect copy of the unknown state at her place. The DAC schemes include two stages. The first stage requires teleportation with Bell-state measurements via a five-qubit Brown state(or seven-qubit Brown state) as the quantum channel. In the second stage, to help the sender realize the quantum cloning, the state preparer performs projective measurements on their own particles which from the sender, then the sender can acquire a perfect copy of the unknown state by means of some appropriate unitary operations. Furthermore, the total success probability for assisted cloning a perfect copy of the unknown state can reach 1 in our schemes.     

Asymptotic Structure of Constrained Exponential Random Graph Models

In this paper, we study exponential random graph models subject to certain constraints. We obtain some general results about the asymptotic structure of the model. We show that there exists non-trivial regions in the phase plane where the asymptotic structure is uniform and there also exists non-trivial regions in the phase plane where the asymptotic structure is non-uniform. We will get more refined results for the star model and in particular the two-star model for which a sharp transition from uniform to non-uniform structure, a stationary point and phase transitions will be obtained.     

Layered lithium-rich oxide nanoparticles: low-temperature synthesis in mixed molten salt and excellent performance as cathode of lithium-ion battery

Layered lithium-rich oxide, 0.5Li₂MnO₃·0.5LiMn_1/3Ni_1/3Co_1/3O₂, is synthesized in a mixed molten salt of KCl and LiCl under 750 °C. Its morphology and structure are characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and nitrogen adsorption and desorption isotherm, and its performances as cathode of lithium-ion battery are investigated by charge–discharge test and electrochemical impedance spectroscopy, with a comparison of the samples synthesized via solid-state reaction. It is found that the resulting product consists of uniform nanoparticles, 50 nm in average, which possesses a well crystallite layered structure although its synthesis temperature is low and thus exhibits excellent cyclic stability and rate capability. The resulting product delivers an initial discharge capacity of 268 mAh g^?1 at 0.1 C and has a capacity retention of 82% after 100 cycles at 1 C, compared to the 243 mAh g^?1 and 73% for the sample synthesized by solid-state reaction under 900 °C.     

辐射成像系统模拟软件NUCRPD的研发与应用

在辐射成像系统的设计研发中,经常需要计算系统的各项物理性能指标。为了提升产品研发的效率,同方威视联合清华大学,基于蒙特卡罗程序包Geant4,研发了国内首套具有自主知识产权的辐射成像系统模拟软件NucRPD(NUCTECH Radiography Performance Design Tools),其能够快速、精确地模拟系统的各项性能指标。该软件对常用的一些辐射成像系统进行了参数化建模,用户通过修改软件界面上的少量参数,就可以快速建立各类辐射成像系统的几何体、源项、物理模型和统计量,然后在服务器上以并行计算方式完成模拟计算,能在较短的时间内模拟出系统的性能指标,并给出直观的图形帮助用户深入理解模拟结果。NucRPD的模拟结果经过了大量的实验验证,其剂量场分布和物理指标等模拟结果和实验结果符合得很好。NucRPD已经应用于同方威视辐射成像系统产品的设计研发,在产品的物理指标优化和辐射防护优化中发挥了重要作用。     

Stress evolution influenced by oxide charges on GaN metal–organic chemical vapor deposition on silicon-on-insulator substrate

GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results. It is mainly due to the difference of the three-dimensional island density and the threading dislocation density in the GaN layer. It can increase the compressive stress in the initial stage of growth of the GaN layer, and helps to offset the tensile stress generated by the lattice mismatch. PACS 81.15.Gh     

高温铝等离子体X光发射谱实验

 在神光-Ⅱ高功率激光装置上,以束匀滑的第九路钕玻璃二倍频激光均匀辐照薄层铝埋点靶,通过激光烧蚀作用产生较均匀的铝高温等离子体,用平面晶体谱仪在靶面前向和切向同时测量了X光发射谱信号,并将前向发射谱进行了定量化还原处理。利用辐射流体力学程序MULTI-1D首先对等离子体状态进行了模拟计算,然后采用基于碰撞辐射模型的光谱程序对该状态下的光谱开展了计算,并将实验测量光谱与理论计算光谱进行了比较和分析,符合得较好。     

MnxGe1－x稀磁半导体薄膜的结构研究

利用X 射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的Mn_xGe_1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明，在Mn的含量较低(7.0%)的Mn_0.07Ge_0.93样品中，只能观察到对应于多晶Ge的XRD衍射峰，而对Mn含量较高(25.0%, 36.0%)的Mn_0.25Ge_0.75和Mn关键词： 磁控溅射 XRD XAFS xGe_1-x稀磁半导体薄膜')" href="#">Mn_xGe_1-x稀磁半导体薄膜