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991.
The main objects of study in this article are two classes of Rankin–Selberg L-functions, namely L(s,f×g) and L(s, sym2(g)× sym2(g)), where f,g are newforms, holomorphic or of Maass type, on the upper half plane, and sym2(g) denotes the symmetric square lift of g to GL(3). We prove that in general, i.e., when these L-functions are not divisible by L-functions of quadratic characters (such divisibility happening rarely), they do not admit any LandauSiegel zeros. Such zeros, which are real and close to s=1, are highly mysterious and are not expected to occur. There are corollaries of our result, one of them being a strong lower bound for special value at s=1, which is of interest both geometrically and analytically. One also gets this way a good bound onthe norm of sym2(g). 相似文献
992.
993.
Let (X, X
;
d} be a field of independent identically distributed real random variables, 0 < p < 2, and {a
,
; (
,
)
d ×
d,
≤
} a triangular array of real numbers, where
d is the d-dimensional lattice. Under the minimal condition that sup
,
|a
,
| < ∞, we show that |
|− 1/p ∑
≤
a
,
X
→ 0 a.s. as |
| → ∞ if and only if E(|X|p(L|X|)d − 1) < ∞ provided d ≥ 2. In the above, if 1 ≤ p < 2, the random variables are needed to be centered at the mean. By establishing a certain law of the logarithm, we show that the Law of the Iterated Logarithm fails for the weighted sums ∑
≤
a
,
X
under the conditions that EX = 0, EX2 < ∞, and E(X2(L|X|)d − 1/L2|X|) < ∞ for almost all bounded families {a
,
; (
,
)
d ×
d,
≤
of numbers. 相似文献
994.
Songqing Zhao Yuzi Liu Shufang Wang Zhen Liu Ze Zhang Huibin Lu Bolin Cheng 《Applied Surface Science》2006,253(2):726-729
B-doped ZnO thin films have been fabricated on fused quartz substrates using boron-ZnO mosaic target by pulsed-laser deposition technique, and the mechanical properties have been studied by nanoindentation continuous stiffness measurement technique and transmission electron microscope (TEM). Nanoindentation measurement revealed that the hardness of B-doped ZnO films, 9.32 ± 0.90 to 12.10 ± 1.00 GPa, is much greater than that of undoped ZnO films and very close to that of traditional semiconductor Si. The mean transmittance (%) is larger than 81% in the visible range (380-780 nm) for all the films, and the Hall effect measurement showed that the carrier density is around 2 × 1020 cm−3 and the resistivity lower than 3 × 10−3 Ω cm. TEM characteristics show undoped thin films have more amorphous area between grains while the B-doped ZnO films have thin grain boundaries. We suggest that the grain boundaries act as the strain compensation sites and the decrease in thickness of grain boundaries enhances the hardness of the B-doped ZnO films. 相似文献
995.
996.
The aim of this article is to discuss an asymptotic approximation model and its convergence for the minimax semi-infinite programming problem. An asymptotic surrogate constraints method for the minimax semi-infinite programming problem is presented by making use of two general discrete approximation methods. Simultaneously, the consistence and the epi-convergence of the asymptotic approximation problem are discussed. 相似文献
997.
采用高斯分解法(GD)对大非线性相移下的Z扫描特性进行了分析,通过对数值算法的优化,将GD推广到对脉冲入射激光下大非线性相移下的Z扫描理论分析.对不同条件下大非线性相移Z扫描曲线峰谷结构的比较,发现在大非线性相移的情况下,Z扫描曲线的峰和谷随透过光阑或入射光强变化表现出某些新的特性.随着透过光阑孔径的增加,Z扫描曲线峰的变化要明显快于谷的变化,而且在谷明显存在的情况下,峰很快消失.采用皮秒脉冲激光下的纯二硫化碳实验对理论结果加以验证,实验结果和理论分析相一致.我们的分析结果对大非线性相移下Z扫描测量有一定的指导性意义,避免在大非线性相移下对Z扫描结果产生错误的分析.
关键词:
大非线性相移
高斯分解法
Z扫描 相似文献
998.
999.
This paper presents a variational inequality (VI) approach to the problem of minimizing a sum of p-norms. First the original problem is reformulated as an equivalent linear VI. Then an improved extra-gradient method is presented
to solve the linear VI. Applications to the problem of p-norm Steiner Minimum Trees (SMT) shows that the proposed method is effective. Comparison with the general extra-gradient
method is also provided to show the improvements of the new method. 相似文献
1000.
Phenylene vinylene‐based electroluminescent polymers with electron transport block in the main chain
Honghao Sun Chongyu Mei Quanguo Zhou Ze Liu Dongge Ma Lixiang Wang Xiabin Jing Fosong Wang 《Journal of polymer science. Part A, Polymer chemistry》2006,44(11):3469-3478
We report a new route for the design of soluble phenylene vinylene (PV) based electroluminescent polymers bearing electron‐deficient oxadizole (OXD) and triazole (TZ) moieties in the main chains with the aryloxy linkage. Both series of the PV‐based polymers were prepared by Wittig reaction. By properly adjusting the OXD and/or TZ content through copolymerization, we can achieve an enhanced balance of hole‐ and electron injections, such that the device efficiency is significantly improved. Light‐emitting diodes fabricated from P1, P2, P3, P4, P5, P6, and P7 with the configuration of Indium–Tin Oxide (ITO)/Poly (styrene sulfonic acid) doped poly (ethylenedioxythiophene) (PEDOT)/polymer/Ca/Al, emit bright green light with the maximum peak around 500 nm. For the device using the optimal polymer (P4) as emitting layer, a maximum brightness of 1300 cd/m2 at 20 V and a maximum luminance efficiency of 0.325 cd/A can be obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3469–3478, 2006 相似文献