Levels in182W populated in the decay of182Ta

Theγ-rays emitted in theβ-decay of¹⁸²Ta have been reinvestigated with improved statistics in attempting to clarify the reported new levels at 1460.41, 1592.98, 1620.36, 1712.29 and 1762.91 keV in¹⁸²W observed in theβ-decay of¹⁸²Ta. The present study demonstrated that the fifteen newγ-rays, which were used to support the existence of the five new levels, are not relevant to theγ-decay of¹⁸²Ta. Therefore the five new levels are not populated in this decay. Additionally, theγ-ray with an energy of 1035.6 keV (0 ₂ ⁺ →2 ₁ ⁺ ) deexciting theβ-band head in¹⁸²W is observed for the first time in the present decay study and the previous tentative placement of the 351.0 keVγ-ray in the level scheme is confirmed by the present coincidence measurements.     

Electrical activity of dislocations: Prospects for practical utilization

The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique (EBIC) in a scanning electron microscope. Clean misfit dislocations, i.e. no EBIC contrast, formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at 400° C to 1130° C from a back-side evaporated layer. Qualitative analysis of the electrical activity in relation to the energy levels anticipated for the clean or decorated dislocations is presented. Of particular interest is the case of defect-induced conductivity type inversion which occurred both at the top surface and at the buried dislocated interfaces of the multilayer. The prospects for using dislocations in a beneficial manner as active elements in electronic devices are discussed.     

The intersection local time of the Westwater process

Summary In this paper, self-intersection properties of the Westwater process are investigated. As a result, we obtain that the Westwater process has an intersection local time (x, [0,s] × [t, 1]) which is Hölder continuous with respect tox, s, t)R ³×[0,1/2]×[1/2,1], and the Hausdorff dimension of the double time set is 1/2, as for Brownian motion inR ³.This work is supported in part by the Fundation of National Natural Science of China     

压电石英晶体在电解质水溶液中的振荡性能研究(Ⅱ)——频率、频移特性

根据两面电极浸入液体中的压电晶体等效电路模型和Pierce振荡器振荡方程的解,得到晶体在电解质溶液中的振荡频率(F_1)与溶液电导率(x)的关系式:F_1=(1/2π)(1/C_1+1/C_2)(1/X_e)[(R_e~2+X_e~2)x~2+2R_ex+1]。以自行设计的Pierce晶体振荡器。研究了晶体和主振电路参数、输入电压及检测池外壳屏蔽接地对AT切9MHz石英晶体在KCl、Na_2SO_4水溶液中的频率、相对于纯水频移随溶液电导率变化的影响规律,结果与上式相符。