波长可调谐取样光纤光栅激光器的输出特性研究

建立了具有两个取样周期略有不同的取样光纤光栅反射镜的Vernier波长调谐机制的光纤分布布拉格反射式激光器的数值仿真模型,对激光器的输出特性进行了分析. 研究了激光器输出特性随着激光器前后光栅反射镜波长以及前后光栅反射镜反射率的变化关系. 提出了对两取样光栅反射率的优化配置方案,可以使输出激光的边模抑制比有所提高;同时对波长调节方式也进行了探讨;进行了实验研究. 关键词： 取样光纤光栅 光纤激光器 波长可调谐激光器     

Tm,Ho:BaY2F8晶体光谱性能与能量传递

采用提拉法,生长钬铥双掺氟化钇钡[分子式:Tm3+Ho3+:BaY2F8,简称Tm,Ho:BYF]激光晶体.工艺参数:拉速0.5 mm·h-1,转速5 r·min-1,冷却速率lO℃·h-1.XRD表明:属于单斜晶系,空间群C12/ml.计算出晶格参数:a=0.69973 nm,6=1.05293 nm,c=0.42784 nm,β=99.710°.测试了晶体的吸收及荧光光谱,同时计算了784 nm处吸收峰的半高宽、吸收系数及吸收截面,分别为3.2 nm,2.23 cm-1,7.44x10-21 cm2.该吸收峰对应于Tm3+离子从基态3H6到激发态3h6的跃迁.Tm,Ho:BYF晶体存2.06μm附近有很强的荧光发射峰,在该荧光峰的发射截面和荧光寿命分别为4.96x10-21cm2,10.1 ms.Tm3+→Ho3+的正向、反向能量转换系数之比是10.4.     

全正色散多波长被动锁模耗散孤子掺镱光纤激光器

报道了一种带有周期性双折射光纤滤波器的全正色散多波长被动锁模耗散孤子掺镱光纤激光器. 通过数值模拟发现加入滤波器后激光器能输出多波长耗散孤子脉冲, 调节滤波器带宽大小可以得到不同波长个数和波长间隔的多波长锁模耗散孤子脉冲. 在激光器产生的四波长和五波长耗散孤子脉冲中观察到了耗散孤子分子, 并且通过调节滤波器参数和饱和功率可以改变多波长脉冲中耗散孤子分子的个数和波长. 这是在被动锁模光纤激光器中首次实现包含有耗散孤子分子的多波长脉冲. 另外还在实验上实现了全正色散双波长被动锁模耗散孤子的产生. 关键词： 全正色散 耗散孤子 多波长脉冲 孤子分子     

采用环形再生腔结构的飞秒激光啁啾脉冲放大研究

采用环形再生腔结构的啁啾脉冲放大技术方案, 在重复频率100 Hz,单脉冲能量33.1 mJ的532 nm激光抽运下, 从钛宝石激光中获得了单脉冲能量9.84 mJ的放大输出, 对应的斜效率达33.1%.在重复频率10 Hz的情况下, 同样获得了单脉冲能量为9.64 mJ, 对应斜效率达36.8%的高效率放大结果. 通过色散补偿压缩该啁啾激光脉冲后的单脉冲能量为6.36 mJ, 脉冲宽度为59.7 fs. 测量结果表明典型的能量不稳定度为1.85%. 关键词： 啁啾脉冲放大 再生放大 飞秒激光 环形腔     

Measurement and analysis of the 238U(n, 2n) reactionrate in depleted uranium/polyethylene shells

In order to check the conceptual design of the subcritical blanket in a fusion-fission hybrid reactor, a depleted uranium/polyethylene simulation device with alternate shells has been established. The measurement of the ²³⁸U(n, 2n) reaction rate was carried out using an activation technique, by measuring the 208 keVγ rays emitted from ²³⁷U. The self-absorption of depleted uranium foils with different thicknesses was experimentally corrected. The distribution of the ²³⁸U(n, 2n) reaction rate at 90° to the incident D⁺ beam was obtained, with uncertainty between 5.3% and 6.0%. The experiment was analyzed using MCNP5 code with the ENDF/BVI library, and the calculated results are all about 5% higher than the measured results.     

基于组合透镜与渐变折射率光纤改进激光器耦合效率的新方法

提出一种利用组合透镜系统与渐变折射率光纤相结合改进激光 器管芯到单模尾纤耦合性能的新方法. 这种方法首先利用组合透镜系统对具有像 散的激光器输出光束进行整形, 然后采用渐变折射率光纤对整形后的光束进行聚焦处理, 并将处理后的的光束耦合进入普通单模光纤. 利用Jones矩阵理论分析表明, 采用这种方法可以得到86%的功率耦合效率, 1 dB插入损耗对应的渐变折射率光纤长度、 横向偏移和倾斜角容差分别为60 μm, 30 μm和2.4°, 且结构简单, 便于操作, 特别适合于大功率激射的激光模块到单模光纤的耦合. 对于提高激光器输出功率, 改善光束质量具有重要意义.     

火焰原子吸收光谱法测定城市污泥中镍的不确定度评定

根据方法CJ/T 221-2005,建立了火焰原子吸收光谱法测定污泥中镍不确定度数学模型,分析了测试过程中不确定度的来源,并对各不确定度分量进行量化,城市污泥中镍的测定结果为37.72士2.08mg/kg,K=2,即测定结果置信水平95％.     

原子轨道的函数表示及可视化

量子化学中,Gaussian型函数是常用的一种基组函数。但最初原子核外单电子波函数的解析解是Slater型函数。介绍了2者之间的差异,以及Gaussian型函数被广泛采用的原因。在介绍这些概念的同时,作者将所涉及的函数形式使用免费的绘图软件gnuplot进行可视化,并给出相应代码,以助于学生更好地理解物理概念以及抽象的数学形式。     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots

Self-assembled quantum dots capping with a GaAs/Gasb combined strain-reduced layer （CSRL） are grown by MBE. Their structural and optical properties are investigated by AFM and photoluminescence （PL）. PL measurements have shown that stronger emission about 1.3μm can be obtained by Sb irradiation and capping QDs with 3 ML GaAs/2 ML GaSh CSRL at room temperature. The full width at half maximum （FWHM） of the PL spectrum is about 20.2 meV （19.9 meV） at room temperature （2OK）, indicating that the QDs have high uniform, The result of FWHM is much better than the recently reported result, which is due to the fact that lower QD growth rate and growth interruption after the QDs deposition are adopted in our experiments.