An Unusual Reductive Ring-opening Reaction of Phthalimide with Sodium Hydride in DMF

An unusual reductive ring-opening reaction of phthalimide with sodium hydride in anhydrous DMF was observed for the first time. The presumed mechanism was described in detail.     

The First and Facile Synthesis of (±) Syringaresinol

The first and facile synthesis of (±)syringaresinol was described.     

Crystal Structures of Two Potential Tumor Imaging Agents and Therapeutic Agents Copper（Ⅱ） Ternary Complexes with Salicylidene-tyrosinato Schiff Base and Nitrogen-donor Chelating Lewis Base

The crystal structures of two potential tumor imaging agents and therapeutic agents -copper(Ⅱ) complexes with salicylidene-tyrosinato Schiff base and nitrogen-donor chelating Lewis base, [Cu(sal-tyr)(bipy)] 1 and [Cu(sal-tyr)(phen)]2CH3OH 2 are presented. Our work is helpful to get deep understanding of novel 64Cu tumor imaging agents and therapeutic agents.     

关于群胚作用和李双代数胚态射

在这篇文章中，我们讨论了李双代数胚之间的态射，得到了一些李双代数胚之间态射的性质．研究了泊松群胚在泊松流形上的泊松作用，以及这个泊松作用与被作用流形的切李双代数胚到作用泊松群胚的切李双代数胚之间的态射的关系，得到了一些有用的结论。     

}MSo浸种对大麦种子萌发及若干性状的影响

本文报道二甲亚矾(DMSO)浸种影响大麦“早熟3号”种子的萌发以及浸种后种子的渗漏和呼吸强度等的变化.结果表明:在24℃条件干浸种，。.1%和5芳的DMSO明显促进种子的萌发，5劣DMSO浸种的促进作用尤为明显.然而这种影响效应在zs c条件下浸种则完全相反，对种子萌发有抑制作用，表现明显的温度效应.     

苯基取代聚乙炔中的元激发

苯环取代聚乙炔是一类具有简并基态的发光聚合物.利用扩展的SuSchriefferHeeger模型,研究了这类聚合物链中的孤子、极化子等元激发特性.结果表明:由于苯环与聚乙炔主链间的强π电子耦合,苯环取代抑制了聚乙炔主链的二聚化,减小了导带与价带之间的能隙;因此取代聚乙炔中的元激发具有较小的激发能,同时具有更大的相干长度.尽管苯基取代对元激发有很大的影响,但是非取代聚乙炔中元激发的基本物理规律依然成立,表明这些元激发的基本特性不受取代基团的影响 关键词： 孤子 极化子 苯基取代聚乙炔     

Windows CE.Net嵌入式操作系统本地化研究及实现

本文对嵌入式Windows CE.Net操作系统的主要体系结构进行剖析.研究设计出了维吾尔文本地化环境,利用资源编译器编译和反编译功能,构建了基于Windows CE.Net平台的维吾尔文图形用户界面资源库,实现Windows CE.Net的界面维文化和基于Windows CE.Net的应用程序的维文支持;开发了输入法程序,实现Windows CE.Net的维吾尔文字键盘输入和软键盘输入;通过编制维吾尔文字库,为Windows CE.Net平台下维吾尔文字的显示、打印提供了基础.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p