硼碳氮纳米管的热解法制备及生长机理研究

以乙二胺、二茂铁和硼氢化钠为原料,以N2和H2为辅气,用钴作催化剂,在不同温度下制备出了具有竹节状结构的硼碳氮(BCN)纳米管.根据透射电子显微镜观察,分析了BCN纳米管的生长机理.B和N的同时掺杂,所形成的五边形结构比单独N掺杂时具有更低的形成能,是竹节状结构形成的主要原因.用Raman光谱可以用来表征BCN纳米管中B和N的掺杂程度及纳米管的质量.分析表明,在860℃下制备的BCN纳米管竹节状结构最密集,质量最好,产率最高.扫描俄歇微探针分析表明,在860℃下制备的BCN纳米管的元素组成比为B∶N∶C= 关键词： BCN纳米管 热解 透射电子显微镜 Raman光谱     

Characteristics of Raman spectra of natural clinochlore at 200 degrees C and 0.95-7.70 GPa

Variation of crystal structure of natural clinochlore with pressure was investigated by the approach of diamond anvil cell (DAC) and in situ micro-Raman spectroscopic measurement at 200 degrees C and up to 7.7 GPa. The 481 and 786 cm(-1) peaks shift towards high-frequency linearly with increasing pressure at 200 degrees C. The linear relations between Raman shift (N, cm(-1)) and pressure (P, GPa) for the two peaks are: N = 11.136P+482.6 (R2 = 0.987 4) and N = 5.055P+785.7 (R2 = 0.983 7), respectively. The 865 cm(-1) peak arising from the stretching mode of the Si-O(nb) shifts slightly because of the strong repulsion between T cations at the tetrahedral sites and M cations at the octahedral sites in the TOT layer. Raman shift of 481 cm(-1) and 786 means the shortening of the length of M-O(br) and Si-CO(br) bonds since the peaks are contributed by the stretching mode of the M-O(br) and Si-O(br) respectively. No phase transition of clinochlore under the experimental condition was found. The results indicate that chlorite minerals may be stable at least at a depth of 80-90 km in the cold subduction zones, and the fluid derived from chlorite dehydration may be an important fact for earthquake occurrence in the subduction zones.     

Enhancing hydrogen evolution of MoS2 basal planes by combining single-boron catalyst and compressive strain

MoS₂ is a promising candidate for hydrogen evolution reaction (HER), while its active sites are mainly distributed on the edge sites rather than the basal plane sites. Herein, a strategy to overcome the inertness of the MoS₂ basal surface and achieve high HER activity by combining single-boron catalyst and compressive strain was reported through density functional theory (DFT) computations. The ab initio molecular dynamics (AIMD) simulation on B@MoS₂ suggests high thermodynamic and kinetic stability. We found that the rather strong adsorption of hydrogen by B@MoS₂ can be alleviated by stress engineering. The optimal stress of −7% can achieve a nearly zero value of ΔG_H (~ −0.084 eV), which is close to that of the ideal Pt–SACs for HER. The novel HER activity is attributed to (i) the B– doping brings the active site to the basal plane of MoS₂ and reduces the band-gap, thereby increasing the conductivity; (ii) the compressive stress regulates the number of charge transfer between (H)–(B)–(MoS₂), weakening the adsorption energy of hydrogen on B@MoS₂. Moreover, we constructed a SiN/B@MoS₂ heterojunction, which introduces an 8.6% compressive stress for B@MoS₂ and yields an ideal ΔGH. This work provides an effective means to achieve high intrinsic HER activity for MoS₂.     

基于波长调制-直接吸收光谱方法的CO分子1567 nm处谱线参数高精度标定

直接吸收光谱(DAS)可直接测量分子吸收率函数,并通过拟合吸收率函数确定待测气体参数.波长调制-直接吸收光谱(WM-DAS)在DAS基础上,结合了波长调制光谱(WMS)中谐波分析思想,利用傅里叶变换复现吸收率函数,可有效提高吸收率函数的测量精度.本文利用WM-DAS方法结合长光程气体吸收池,在室温低压条件下,对CO分子1567 nm处R5-R11近红外弱吸收谱线吸收率函数进行了精确复现,其拟合残差标准差低至3×10^-5,随后根据测得的吸收率函数对谱线的碰撞展宽、Dicke收敛以及速度依赖的碰撞展宽系数等光谱参数进行了高精度标定,并将其与高灵敏度的连续波腔衰荡光谱(CW-CRDS)测量结果进行了比较,实验结果表明该方法与CW-CRDS测量结果具有高度一致性,更具有系统简单、测量速度快、对环境要求低等优点.     

BEPCII直线加速器数字延时触发器的设计与实现

针对北京正负电子对撞机II期（BEPC II）直线加速器升级改造过程中束流位置探测器（BPM）电子学对外部触发信号的需求,设计了一台高精度延时控制、上升时间短和参数灵活调节的数字延时触发器。采用FPGA（现场可编程门阵列）作为主控制器展开设计,重点介绍了基于FPGA的边沿检测模块和多通道延时处理模块的设计与仿真,描述了FPGA和驱动电路的设计方案以及在直线加速器上的应用。经测试,延时可调范围4 ns～4 μs,最小步进4 ns,步进误差0.125%;上升时间2 ns,延时抖动135.4 ps。     

Fabrication and magnetic properties of ordered Fe60Pb40 nanowire arrays electrodeposited in AAO templates

Ordered ferromagnetic-nonmagnetic heterogeneous Fe₆₀Pb₄₀ nanowire arrays were successfully fabricated by alternating current (AC) electrodeposition into nanoporous alumina templates. Transmission electron microscopy (TEM) image and selected-area diffraction (SAED) pattern analysis showed that the Fe₆₀Pb₄₀ nanowires are polycrystalline with an average diameter of 22 nm and lengths up to several micrometers. X-ray diffraction (XRD) observations indicated that α-Fe and fcc Pb phase coexist and do not form metastable alloy phase. The as-deposited samples were annealed at 200, 300, 400 and 500 ^°C, respectively. Magnetic measurements showed that nanowires have high magnetic anisotropy with their easy axis parallel to the nanowire arrays, and the coercivity of the samples increased with the annealing temperature up to 400 ^°C and reached a maximum (2650 Oe). The change of magnetic properties associated with the microstructure was discussed.     

对称相位函数掩模化的研究

本文对各种连续对称相位函数及其特性进行了分析,讨论了相位函数的2π调制、2^N和N-1法量化等问题及数据处理过程,提出二元衍射元件CIF(Caltech Intermediate Form)格式掩模数据的生成方法,并建立了实用软件,为激光直写技术实现二元衍射光学元件制作提供了有效的手段.     

1.54 μm Light emission from Er/O and Er/F doped Si p–i–n diodes grown by molecular beam epitaxy

Various light emitting devices (LED) have been processed using Er/O- and Er/F-doped Si layered structures grown by molecular beam epitaxy (MBE) at low temperature. A comparative study has been carried out in order to provide more understanding of the electroluminescence (EL) excitation and de-excitation mechanisms in particular at a high injection current regime. Comparing the experimental results with model calculations the values of excitation cross section, σ_ex, and effective Auger coefficient, C_A, have been determined for various devices operated at different biases. Time-resolved EL measurements of these Er/O- and Er/F-doped MBE Si structures, using an experimental set-up with a time response of 200 ns, have been performed with different excitation conditions. Besides the spontaneous Er emission (700 μs), some fast EL decay processes associated with the Auger energy transfer via free carriers (4 μs), and the hot carrier effects (200 ns) have been identified.     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.