氧离子激发光谱的精密测量

在2×1.7串列加速器上利用束-箔方法和装有CCD的Spectrapro-500i光谱单色仪的测量装置，在2MeV束能下研究了250nm—350nm波长范围离化态氧原子光谱.在250nm—350nm范围已确定的201条光谱线，确定的跃迁大部分属于OⅡ到OⅣ原子的n，l能级间的跃迁，一些实验结果与现有理论一致.实验发现，在这个范围的光谱大都属于弱跃迁谱线，并且许多谱线是以前没有观测到的. 关键词： 串列加速器 氧离子 CCD 光谱     

Isolation and Characterization of Proteins Interacting with Activin Type Ⅱ Receptors

Introduction Activinisamemberofthetransforminggrowth factor(TGF)βsuperfamilyofextracellularsignaling proteins.Themembersofthisfamilyplayacriticalrole duringembryogenesisandinmaintainingtissuehomeo stasisinadultlife[1—3].DeregulatedTGFfamilysigna lingisi…     

Differential determination of arsenic(III) and total arsenic using flow injection on-line separation and preconcentration for graphite furnace atomic absorption spectrometry

Arsenic(III) can be quantitatively extracted using sodium diethyldithiocarbamate (NaDDTC) as the complexing agent and C18 reversed phase packing as the column material for solid phase extraction. Arsenic(V) must be reduced to its trivalent oxidation state prior to extraction. A mixture of sodium sulphite, hydrochloric acid, sodium thiosulphate and potassium iodide was found to be optimum for on-line reduction. When the sorbent extraction is carried out without and with the addition of the reduction mixture, arsenic(III) and total arsenic can be determined sequentially by graphite furnace atomic absorption spectrometry with detection limits (3 σ) of 0.32 ng for As(III) and 0.43 ng for total arsenic. A 7.6-fold enhancement in peak area compared to direct injection of 40 μl samples was obtained after 60 s preconcentration. Results obtained for sea water standard reference materials, using aqueous standards for calibration, agree well with certified values. A precision of 5.5% RSD was obtained for total arsenic in a sea water sample (1.65 As). Results obtained for synthetic mixtures of trivalent and pentavalent arsenic agreed well with expected values.     

Multi-cracks problem for piezoelectric materials strip subjected to dynamic loading

This paper analyses and models the dynamic interaction among permeable multi-cracks in a piezoelectric strip under anti-plane shear waves by the Schmidt method. The Fourier transform is applied and then two pairs of triple integral equations can be solved using the Schmidt method. The results show that the stress and the electric displacement intensity factors of cracks depend on not only the crack length and the piezoelectric coefficient, but also the thickness of the piezoelectric strip, the distance between multi-cracks and the frequency of incident wave.     

基于变芯径光纤的光学系统在光造型中的应用

光学系统采用变芯径光纤，可大幅度提高光的传输效率，增加光学子系统柔性。描述了光造型工作原理及其理论依据，在介绍所研制的光的成型系统光学子系统的基础上，阐述了紫外光源的选择与设计，及变芯径光纤的设计、传输、耦合与聚焦等技术。该套基于变芯径光纤的光学子系统成本低、体积小、效率高，巳成功应用于所研制的台式低成本快速成型系统中，为该系统的进一步推广奠定了技术基础。     

广义Hénon映射的滑模变结构控制同步

基于可线性化的非线性离散变结构跟踪控制方法实现了广义Hénon映射混沌系统的同步.广义Hénon映射的混沌吸引子比Hénon映射的混沌吸引子要复杂得多,对于保密通信来说,这种复杂性正是所期望的.提出的同步方法允许参数有适当的失配程度,这对工程实现是非常有利的,理论分析和仿真结果证实了该方法的有效性 关键词： 广义Hénon映射 混沌 同步 变结构控制     

HL－1装置中LHCD和等离子体参数的关系

本文研究了在ＨＬ－１托卡马克的不同放电阶段的低混杂波驱动特性。给出了驱动电流及驱动效率和等离子体参数，如电子平均密度ｎｅ、等离子体电流Ｉｐ及纵向磁场的关系。也给出和分析了波驱动和入射波功率的关系。在放电平段，对正反向驱动效率进行了研究和比较。     

Crystallographic report: Bis[bis(N,N‐dibenzyldithiocarbamato)cadmium(II)]

The centrosymmetric structure of {Cd[S₂CN(CH₂Ph)₂]₂}₂ features both bridging and chelating dithiocarbamate ligands so that a square pyramidal S₅ coordination geometry results. Copyright © 2004 John Wiley & Sons, Ltd.     

一种高温超导磁悬浮装置

本文介绍一个基于倒挂吸引式(EMS)原理的高温超导磁悬浮试验装置．这个装置由高温超导磁体、单臂梁金属导轨、位置传感器、控制电路等组成．绕制超导磁体线圈所用的是Bi-2223／Ag高温超导线材．超导磁体工作在激磁电流为3．2A时，在5mm的空气间隙中产生0．21T的磁通密度，与单臂梁金属导轨可产生72N的垂直悬浮力．通过引入压控电流源，利用常规的超前一滞后校正实现了该磁悬浮装置的稳定悬浮和鲁棒控制，在负载变化87．5%的情况下仍能实现超导磁悬浮装置的稳定悬浮．该试验装置首次验证了高温超导线圈的可控性问题，为进一步探索高温超导线圈用于磁悬浮轨道交通系统的可行性打下了基础．     

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn_1−xNi_xO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn_0.86Ni_0.14O. We studied the electronic structure of Zn_0.86Ni_0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy E_F, which is of Ni 3d origin. No emission was found at E_F, suggesting the insulating nature of the film.