An order-by-disorder process in the cyclic phase of spin-2 condensate with a weak magnetic field

We present in this paper a model study on the “order-by-disorder” process in the cyclic phase of spin-2 condensate, which forms a family of incommensurable, spiral degenerate ground states. On the basis of the ordering mechanism of entropic splitting, it is demonstrated that the energy corrections resulting from quantum fluctuations of disorder lift the accidental degeneracy of the cyclic configurations and thus lead to an eventual spiral order called the cyclic order. The order-by-disorder phenomenon is then realized even if the magnetic field exists. Finally, we show that our theoretic observations can be verified experimentally by direct detection of the cyclic order in the ⁸⁷Rb condensate of a spin-2 manifold with a weak magnetic field.     

A non-standard auxiliary integrating sphere and correction method for the realization of diffuse reflectance

To realize spectral diffuse reflectance scale in 0/d geometric condition at National Institute of Metrology in China (NIM), a facility based on a non-standard auxiliary integrating sphere method with special structure has been built up and a correction method for the influence on the thickness of PTFE (polytetrafluoroethylene) coating at the port of auxiliary integrating sphere is mainly discussed. The uncertainty of spectral diffuse reflectance in NIM is approximately 0.25% (k = 2) in 380–800 nm. This facility has been used to establish China diffuse reflectance scales in the VIS–NIR part of the spectrum. This system and correction method presented in this paper can be easily implemented on most commercial spectrophotometers with a lower cost.     

随机动态线性经济系统的稳定性

本文讨论随机动态线性经济系统：Ｙｔ＝ＡＹ＿（ｔ－１）＋ｂ十μ＿ｔ在矩阵Ａ为一般情形下的稳定性问题。并给出该系统稳定的充要条件。     

Nonisothermal Crystallization Behavior of Polypropylene Grafted Silane and Styrene Using γ-Ray Irradiation

Polypropylene grafted silane and styrene (named PP-g-Si/St in this article) was successfully prepared by radical graft polymerization initiated by γ-ray irradiation. The influence of total absorbed dose on the graft ratio of vinyltrimethoxysilane onto PP and the melt flow rate (MFR) of the PP-g-Si/St product were studied. The effect of graft ratios of vinyltrimethoxysilane on the melting point and nonisothermal crystallization kinetics of PP-g-Si/St was investigated by the method of differential scanning calorimetry (DSC). With increasing vinyltrimethoxysilane and styrene (used as viscosity modifier and free radical source) grafted on PP, the melting point of PP-g-Si/St became lower. Several different analysis methods, including those of Avrami, Jeziorny, and Mo and colleagues, were employed to describe the nonisothermal crystallization process of the grafted samples. The results indicate that the peak temperature of crystallization of PP-g-Si/St sample was lower than that of virgin PP. Crystallization kinetics revealed that the rates of nucleation and growth were affected differently by the graft ratio of vinyltrimethoxysilane onto PP. The activation energy was calculated on the basis of the method of Kissinger, and the values were 253.6 and 215.7 kJ/mol for virgin PP and PP-g-Si/St, respectively.     

全内反射瞬逝场照明高精度磁镊及其在DNA解旋酶研究中的应用

传统磁镊的测量精度受限于磁球的布朗涨落, 当磁力小于约10 pN时, 磁球的布朗涨落明显增大, 对应磁镊的空间分辨率显著下降. 为了提高传统磁镊在小力条件下的测量精度, 本文将全内反射荧光技术引入到磁镊技术中, 并建立相适应的“磁球-手柄-荧光微球-待测生物分子”单分子连接系统, 在小力条件下(小于10 pN)获得纳米量级的测量精度. 应用改进的磁镊对DNA发卡的折叠-去折叠态的转变过程进行了研究, 依据DNA发卡的折叠-去折叠态转变的性质对全内反射场的穿透深度进行了校正, 并结合实验结果对改进后的磁镊的测量精度进行分析. 观察了Bloom解旋酶的解旋动力学过程, 获得初步实验结果, 证实了改进的磁镊在单分子研究中的实用性. 关键词： 磁镊 全内反射荧光 DNA发卡 解旋酶     

Vibrational Spectroscopic Investigation and Theoretical Calculations of (E)-3-Phenyl-N-[4-(Phenyl-Amino) Quinazoline-7-yl] Acrylamide

ABSTRACT

Optimized geometrical structure and harmonic vibration frequencies of prior synthesized (E)-3-phenyl-N-[4-(phenyl-amino) quinazoline-7-yl] acrylamide were computed by ab initio HF and DFT/B3LYP methods using both 6-31G* and 6-311G** basis sets and the Moller–Plesset second-order perturbation (MP2) method merely at the 6-31G* level. The infrared (IR) spectrum of the title compound has been measured in the range of 400–4000 cm^?1. Complete vibrational assignments of the IR spectra were proposed. Moreover, the calculated wavenumbers of the title compound were compared with the experimental data. The correlation analyses indicate that good linearity relationships exist between the scaled theoretical vibration frequencies and the experimental values. Additionally, the atoms in molecules (AIM) method was applied to explore the possible intramolecular interactions in the title compound.     

ON THE MIXED PROBLEMS IN AN EIASTIC PIANE WITH PERIODIC CRACKS

ＯＮＴＨＥＭＩＸＥＤＰＲＯＢＬＥＭＳＩＮＡＮＥＩＡＳＴＩＣＰＩＡＮＥＷＩＴＨＰＥＲ１ＯＤＩＣＣＲＡＣＫＳＺｈｅｎｇＫｅ（郑可）（ＷｕｈａｎＵｎｉｖｅｒｓｉｔｙ）ＯＮＴＨＥＭＩＸＥＤＰＲＯＢＬＥＭＳＩＮＡＮＥＩＡＳＴＩＣＰＩＡＮＥＷＩＴＨＰＥＲ１ＯＤＩ...     

Investigations on the g factors of the ground and excited states for Cu2+ ions in ZnO crystal

The g factors g _// and g _⊥ of the ground Γ₆(² T ₂) and excited Γ_4,5(² E), Γ₆(² E) states for trigonal Cu²⁺ centres in ZnO crystals are calculated from three theoretical methods, the complete diagonalization (of the energy matrix) method, the second-order perturbation method (PTM-I) and the simplified second-order perturbation method (PTM-II, this method was described in an earlier paper). These methods are based on the cluster approach in which the spin-orbit coupling parameters ζ, ζ′ and the orbital reduction factors k, k′ are calculated from a semi-empirical molecular orbital method. The crystal-field parameters used in the calculations are obtained from the superposition model and so the defect structure of Cu²⁺ centres in ZnO can be acquired. The calculated g factors from the three methods are in reasonable agreement with the experimental values and the defect structure of Cu²⁺ centres in ZnO is acquired. It appears that in some cases the approximate PTM can be applied in the studies of g factors of various states. The conditions that the PTM are ineffective are discussed.     

Ag-N共掺p型ZnO的第一性原理研究

采用基于密度泛函理论的第一性原理赝势法对Ag-N共掺杂ZnO体 系以及间隙N和间隙H掺杂p型ZnO: (Ag, N)体系的缺陷形成能和离化能进行了研究. 结果表明, 在Ag_Zn和N_O所形成的众多受主复合体中, Ag_Zn-N_O受主对不仅具有较低的缺陷形成能同时其离化能也相对较小, 因此, Ag_Zn-N_O受主对的形成是Ag-N共掺ZnO体系实现p型导电的主要原因. 研究发现, 当ZnO: (Ag, N)体系有额外间隙N原子存在时, Ag_Zn-N_O受主对容易与N_i形成Ag_Zn-(N₂)_{m O}施主型缺陷, 该施主缺陷的形成降低了Ag-N共掺ZnO的掺杂效率因而不利于p型导电. 当间隙H引入到ZnO: (Ag, N)体系时, H_i易与Ag_Zn-N_O受主对形成 受主-施主-受主复合结构(Ag_Zn-H_i-N_O), 此复合体的形成不仅提高了Ag_Zn-N_O受主对在ZnO中的固溶度, 同时还能使其受主能级变得更浅而有利于p型导电. 因此, H辅助Ag-N共掺ZnO可能是一种有效的p型掺杂手段. 关键词： p型ZnO 缺陷形成能 受主离化能 第一性原理