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101.
102.
针对非规则封闭空间声场建模问题,提出了一种基于Chebyshev-变分原理的声场建模方法。该方法首先选取包络非规则声场的矩形空间并将此矩形空间内的声压函数展开成三重Chebyshev级数形式,然后通过坐标变换得到定义域空间中的声场势能和声场动能,最后按照里茨方法对声场的拉格朗日泛函进行求解,得到声场的特征方程并求得声场固有频率和模态。通过与曲面声场的数值结果对比,验证了本建模方法的正确性和有效性。在此基础上研究具有不同倾角的梯形声场固有特性,分析内部凹槽深度对\ 相似文献
103.
MNA/PMMA有机薄膜光波导 总被引:2,自引:0,他引:2
研究出MNA/PMMA有机薄膜光波导。用棱镜耦合器进行了波导参数的测量,发现薄膜呈现各向异性,有较大的双折射。 相似文献
104.
A glass fiber piezooptical optical bistability device is reported.Basing on pho-toelastic and strain effects of single-mode fiber,we have realized piezooptical modulation andperformed experiments of optical bistability. 相似文献
105.
106.
By solving the time-dependent Schro¨dinger equation, the dependence of photoelectron energy spectra on the binding energy of targets, wavelength and the intensity of laser pulse is exhibited and a scaling law of kinetic energy spectra of both the direct and the rescattered photoelectrons is concluded. The scaling law provides a convenient tool to determine the equivalent photoionization process of various atoms or molecules in various laser fields. The verification of the scaling law by independent methods provides incontestable support to the validity of the scaling law. 相似文献
107.
A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes. 相似文献
108.
109.
The maximally entanglement will become less-entangled state because of the effects of decoherence. However, maximally entangled states are usually important for most of the quantum information processing protocols. So we propose a practical entanglement concentration protocol of an arbitrary four-photon less-entangled state assisted with single photons, which greatly reduces the difficulty of the experimental realization. In our scheme, we only employ three steps, a four-photon cluster state can be acquired with a certain probability by three affiliated photons. The protocol adopts the linear optical elements and weak cross-Kerr media, which make the scheme more simple and feasible in the experiment. 相似文献
110.
A pattern matching based tracking algorithm, named MdcPatRec, is used for the reconstruction of charged tracks in the drift chamber of the BES detector. This paper addresses the shortage of segment finding in the MdcPatRec algorithm. An extended segment construction scheme and the corresponding pattern dictionary are presented. Evaluation with Monte-Carlo and experimental data show that the new method can achieve higher efficiency for low transverse momentum tra 相似文献