Ce~(3+)∶LiCaAlF_6紫外激光器的研究

报道了利用Nd∶YAG四倍频266nm脉冲激光端面泵浦Ce∶LiCAF晶体,采用平凹谐振腔,输出296nm波长紫外激光.当输出镜透过率为20%,入射泵浦能量为13.5mJ时,获得最大输出激光脉冲能量为270μJ,脉冲宽度为3.4ns,输出激光峰值功率为79.4kW,光-光转换效率为2%,斜效率为1.6%.     

稀释磁性半导体Sn1-xMnxO2的室温铁磁性

采用固相反应法，制备了不同成分的稀释磁性半导体Sn_1-xMn_xO ₂(x=002，004，006)．利用x射线衍射和傅里叶变换红外光谱法证明 了锰均匀地掺杂到二氧化锡中．在室温下研究了掺锰二氧化锡基稀释半导体的磁性，发现它具有明显的铁磁性 ，同时对磁性的强弱与锰的含量和烧结温度的关系作了研究． 关键词： 稀释磁性半导体 掺杂 烧结 铁磁性 1-xMn_x O₂')" href="#">Sn_1-xMn_x O₂     

超大规模集成电路互连电迁移自由体积电阻模型

将晶核析出的Avrami 方程应用于描述超大规模集成电路中金属Al薄膜互连电迁移过程中电阻的演变. 根据电子散射理论，晶界电阻主要起源于晶界处空位或者空洞对电子的散射. 为了描述这些离子的特征，引入了自由体积的概念，将晶界处电子散射这个复杂的过程简化用自由体积的有效散射截面来描述，从而建立了自由体积与电阻变化的定量关系，统一描述了电迁移过程中不同阶段的电阻变化. 数值模拟结果表明，在第一个空洞成核时刻电阻会发生急剧变化，这一结果已被实验所证实. 关键词： 电迁移 Al互连 电阻变化     

高分子网络凝胶法低温合成YAG∶Tb3+荧光粉

以金属硝酸盐为原料,丙烯酰胺为聚合单体以及N,N-亚甲基双丙烯桥酰胺为胶联剂,采用高分子网络凝胶法在低温下合成精细粒度Y3Al5O12∶Tb3 (YAG∶Tb3 )荧光粉.分别用热重-差热分析(TG-DTA)、X射线衍射(XRD)、扫描电子显微镜(SEM),以及激发和发射光谱测量对样品进行了表征,考察了烧结温度对样品结晶程度、颗粒大小的影响,以及样品发光性能与烧结温度和Tb3 浓度的关系.结果表明:YAG晶相形成温度为850℃;粉体颗粒大小均匀,随着烧结温度的升高,颗粒粒径增大,结晶程度提高;观察到Tb3 中4f-5d的吸收带以及5D4-7Fj(j=6,5,4,3)的特征发射带,最强吸收与最强发射分别发生在272,541.8 nm,与量子理论(E=1.24/λ)的计算结果相吻合,其发光强度随烧结温度的升高而增强;观察到了Tb3 在Y3Al5O12中的浓度猝灭现象.     

MOSFET辐照诱生界面陷阱形成过程的1/f噪声研究

基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式.利用初始1/f噪声功率谱幅值与氧化层空穴俘获之间的联系,建立了辐照前的1/f噪声幅值与辐照诱生界面陷阱数量之间的半经验公式,并通过实验予以验证.研究结果表明,由于辐照诱生的氧化层内陷阱通过与分子氢作用而直接参与到界面陷阱的建立过程中,从而使界面陷阱生成数量正比于这种陷阱增加的数量,因此辐照前的1/f噪声功率谱幅值正比于辐照诱生的界面陷阱数量.研究结果为1/f噪声用作MOSFET辐照损伤机理研究的新工具,对其抗辐照性能进行无损评估提供了理论依据与数学模型.     

The effect of doping by IV-family elements on the electronic structure and electrical characteristics of Sb2O5

The electronic structures of doped Sb₂O₅ by IV-family elements (Si, Ge and Sn) were examined using the density function theory (DFT). Density of states (DOSs) results showed that the substituted IV-family elements act as acceptors in Sb₂O₅. Partial DOSs indicates that by substituting Ge(Ge _Sb ) or Sn(Sn _Sb ), there may be a larger contribution to the total DOSs near E _F than by substituting Si, which suggests that doping Ge or Sn in Sb₂O₅ produces better ptype doping compared to doping Si. Formation energy results show that IV-family elements are more likely to exist in the substituted position rather than in the interstitial position in Sb₂O₅, decreasing any self-compensation effect and making it easier for IV-family elements to realize ptype doping in Sb₂O₅. Ionization energy results show that Ge _Sb or SnSb, two among the three impurities considered, act as shallow acceptors in Sb₂O₅, thus producing a higher concentration of holes.      

Novel Broadband Reflectarray Antenna with Windmill-Shaped Elements for Millimeter-Wave Application

A novel broadband millimeter-wave reflectarray antenna composed of windmill-shaped elements of variable lengths is proposed. Compared to the conventional single-layer reflectarray elements, the windmill-shaped elements can realize much larger phase variation range (over 600°), leading to broader bandwidth. Using this technique, a 15°-beam-steering reflectarray operating at 30 GHz is designed. The computed results demonstrate the agreement of the main beam steering with the design requirement, and a 1-dB gain bandwidth close to 20% is obtained. The validity of the obtained results is verified by comparing the ones generated by Ansoft High Frequency Structure Simulator (HFSS) with those produced by Ansoft Designer. The antenna is useful for millimeter-wave applications. This work was supported by the National Natural Science Foundation of China (No. 90505001), the High-Tech Research and Development Program of China (No. 2006AA01Z275), and the Creative Research Group Program of UESTC.     

双模最小关联混合态作为量子信道实现量子隐形传态的保真度

基于Braunstein和Kimble提出的B-K方案以双模最小关联混合态作为量子信道实施对未知量子态的隐形传送，并以传送相干态为例进行了研究.结果表明：双模最小关联混合态作为一种广义的Einstein-Podolsky-Rosen型纠缠态在实现量子隐形传态中能很好地担当量子信道的角色，在纠缠度和压缩度选择适当的条件下被传送未知量子态的保真度可以达到1.这是比双模压缩真空态更优越的量子信道. 关键词： 量子隐形传态 双模最小关联混合态 保真度     

核磁共振任意波形发生器的研制

任意波形发生器（又叫函数发生器）作为一种通用的信号源,在物理、电子、计算机等领域有着广泛的应用. 本文提出了一种不依赖PC机总线的、完全独立的、 可用于低场磁共振成像的多用途任意波形发生器（Arbitrary Waveform Generator, AWG）设计方案,围绕着这种方案,研制了80 MHz通用磁共振任意波形发生器. 并提供了实际测试数据和成像实验结果,对研制情况和实验结果进行了总结和讨论.     

Enhanced Efficiency of Polymer Light-Emitting Diodes by Dispersing Dehydrated Nanotube Titanic Acid in the Hole-buffer Layer

Efficiency of polymer light-emitting diodes (PLEDs) with poly(2-methoxy-5-(2-ethyl hexyloxy)-p-phenylene vinylene) (MEH-PPV) as an emitting layer was improved if a dehydrated nanotubed titanic acid (DNTA) doped hole-buffer layer polyethylene dioxythiophene (PEDOT) was used. Photoluminescence (PL) and Raman spectra indicated a stronger interaction between DNTA and sulfur atom in thiophene of PEDOT, which suppresses the chemical interaction between vinylene of MEH-PPV and thiophene of PEDOT. The interaction decreases the defect states in an interface region to result in enhancement in device efficiency, even though the hole transporting ability of PEDOT was decreased.