叠层荧光集光太阳能光伏器件的性能模拟和优化

荧光集光太阳能光伏器件可以减少太阳能电池的用量,有效降低光伏发电的成本.相对于单层荧光 集光太阳能光伏器件,叠层荧光集光太阳能光伏器件能分波段充分利用太阳光谱,提高荧光集光太阳能光伏 器件的效率,进一步降低光伏发电的成本.但是,叠层荧光集光太阳能光伏器件涉及较多的参量,难以通过实验 优化.本文分析了从单层到叠层荧光集光太阳能光伏器件的全部物理过程,建立了数学模型,并相应编制了 计算机模拟软件.运用上述软件,系统研究了器件尺寸、太阳能电池的带隙对光电转换效率的影响.     

具有部分超结的新型SiC SBD特性分析

提出了一种具有部分超结（super junction, SJ）结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(V_B)和比导通电阻(R_on-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2< 关键词： SiC肖特基二极管 super junction 导通电阻 击穿电压     

Investigation of the Potts Model on Triangular Lattices by the Second Renormalization of Tensor Network States

We employ the second renormalization group method of tensor-network states to investigate thermodynamic properties of the ferromagnetic and antiferromagnetic Potts model on triangular lattices. From the temperature dependence of the internal energy and the specific heat, both the critical temperatures and critical exponents are evaluated. For the q = 3 antiferromagnetic Potts model, the critical temperature is found to be Tc = 0.627163±0.000003, which is at least one order of magnitude more accurate than that obtained by other methods.     

New finite-gap solutions for the coupled Burgers equations engendered by the Neumann systems

On the tangent bundle TS^N-1 of the unit sphere S^N-1, this paper reduces the coupled Burgers equations to two Neumann systems by using the nonlinearization of the Lax pair, whose Liouville integrability is displayed in the scheme of the r-matrix technique. Based on the Lax matrix of the Neumann systems, the Abel--Jacobi coordinates are appropriately chosen to straighten out the restricted Neumann flows on the complex torus, from which the new finite-gap solutions expressed by Riemann theta functions for the coupled Burgers equations are given in view of the Jacobi inversion.     

Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

This paper studies boron contamination at the interface between the p and i layers of μ c-Si:H solar cells deposited in a single-chamber PECVD system. The boron depth profile in the i layer was measured by Secondary Ion Mass Spectroscopy. It is found that the mixed-phase μ c-Si:H materials with 40% crystalline volume fraction is easy to be affected by the residual boron in the reactor. The experimental results showed that a 500-nm thick μ c-Si:H covering layer or a 30-seconds of hydrogen plasma treatment can effectively reduce the boron contamination at the p/i interface. However, from viewpoint of cost reduction, the hydrogen plasma treatment is desirable for solar cell manufacture because the substrate is not moved during the hydrogen plasma treatment.     

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.     

Energy Squeeze of Ultrashort Light Pulse by Kerr Nonlinear Photonic Crystals

Self-phase modulation can efficiently shape the spectrum of an optical pulse propagating along an optical material with Kerr nonlinearity. In this work we show that a one-dimensional Kerr nonlinear photonic crystal can impose anomalous spectrum modulation to a high-power ultrashort light pulse. The spectrum component at the photonic band gap edge can be one order of magnitude enhanced in addition to the ordinary spectrum broadening due to self-phase modulation. The enhancement is strictly pinned at the band gap edge by changing the sample length, the intensity or central wavelength of the incident pulse. The phenomenon is attributed to band gap induced enhancement of light-matter interaction.     

基于神经网络的多联变频空调电子膨胀阀控制系统研究

空调制冷系统具有滞后大、非线性等特点,采用普通控制方式时效果不尽人意。采用BP-PID控制器对系统电子膨胀阀开度进行控制,并设计了BP-PID控制器。实践结果表明,该控制方法简单有效,很好地满足了用户的实际需要。     

甚高频等离子体增强化学气相沉积法沉积μc-Si∶H薄膜中氧污染的初步研究

对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜. 关键词： 氢化微晶硅薄膜 甚高频等离子体增强化学气相沉积 氧污染