Magnetic and transport properties of bilayered manganites La1.2Sr1.8Mn2-xGaxO7（x=0,0.08）

The magnetic and electrical properties of nonmagnetic Ga +3 ion substitution for Mn site are investigated in the bilayer manganite La 1.2 Sr 1.8 Mn 2 O 7.When the Mn is substituted by Ga,the ferromagnetic property obviously weakens,the magnetic transition temperature decreases and a spin-glass behaviour occurs at low temperature.Meanwhile,doping causes the resistivity to dramatically increase,the metal-insulator transition temperature to disappear,and a greater magneto-resistance effect to occur at low temperature.These effects result from the fact that Ga substitution dilutes the magnetic active Mn-O-Mn network and weakens the double exchange interaction,and further suppresses ferromagnetic ordering and metallic conduction.     

Fold optics path: an improvement for an atomic fountain

A fold optical path is utilized to capture and launch atoms in the atomic fountain.This improved technique reduces the laser power needed by 60 percent,facilitates suppression of the laser power fluctuations,and leads to a more simple and stable system.     

应用多光路主动差分光学吸收光谱仪观测大气污染物的空间分布

研制了一套具有4条测量光路的主动差分光学吸收光谱仪(DOAS)系统,以一盏短孤氙灯为4台集成一体的发射/接收望远镜提供光源,可同时发射4条相互独立的测量光路,4台望远镜的角度可分别独立调整以对准不同位置的角反射镜,光路之间的最大发散角可达28°.为测试仪器性能,使4条光路测量同一区域内的NO₂浓度. 对4条光路的测量结果进行相互对比,任意两条光路的相关系数均在0.97以上,测得NO₂的体积分数平均差异小于10^-9, 表明结果具有良好的一致性 关键词： 差分光学吸收光谱 2')" href="#">NO₂ 2')" href="#">SO₂ 大气污染     

分子间费米共振增强二元溶液体系的受激拉曼散射研究

研究了液芯光纤内不同体积比的甲苯和间二甲苯二元混合溶液的受激拉曼散射.实验结果表明:在不同的体积比之下二元溶液的环呼吸振动模式1002 cm^-1,甲基的CH伸缩振动模式2920 cm^-1 以及芳香环CH对称伸缩振动模式3058 cm^-1的拉曼带同时产生受激拉曼辐射,并且2920 cm^-1 和 3058 cm^-1 拉曼带的一阶受激拉曼散射阈值要低于1002 cm^-1拉曼带的二阶 关键词： 分子间费米共振 二元溶液 受激拉曼散射 拉曼散射截面     

基于弱相干态光源的非正交编码被动诱骗态量子密钥分配

基于改造的弱相干态光源,提出了一种非正交编码被动诱骗态量子密钥分配方案.该方案不主动制备诱骗态,而是根据发送端探测器是否响应,将接收端的探测结果分为响应集合和未响应集合,以此分别作为信号态和诱骗态,并利用这两个集合来估计参量和生成密钥.数值仿真表明,非正交编码被动诱骗态方案的密钥生成效率和安全传输距离都优于现有的被动诱骗态方案,且性能非常接近主动无穷诱骗态方案的理论极限值;未响应集合对密钥生成的参与使方案性能免受发送端探测效率的影响,弥补了实际探测器探测效率低下的缺陷;由于不需要主动制备诱骗态,该方案实现非常简单,适用于高速量子密钥分配的场合. 关键词： 量子光学 量子密钥分配 被动诱骗态 密钥生成效率     

Fe离子注入ZnO生成超顺磁纳米颗粒

过渡族元素掺杂ZnO生成稀磁半导体, 成为近期国际材料科学研究的热点. 在本文中, 研究Fe离子注入ZnO单晶的结构和磁性变化, 目标是建立磁性和结构的对应关系, 澄清铁磁性的来源. 采用卢瑟福背散射/沟道技术 (RBS/Channelling)、同步辐射X射线衍射 (SR-XRD)和超导量子干涉仪 (SQUID), 研究注入温度和退火对样品的晶格损伤、结构及磁性的影响. 研究表明: 样品注入区损伤随注入温度升高而降低; 低温253 K注入样品中, SR-XRD未检测到新相, Fe离子分布于Zn位, ZnO (0002) 峰右侧肩峰可能属于Zn_1-xFe_xO, 5 K下测试样品不具有铁磁性; 623 K注入和823 K真空退火 (253 K注入) 样品中形成α和γ相金属Fe, 5 K下样品具有明显的剩磁和矫顽力, 零场冷却和场冷却 (ZFC/FC) 曲线和300 K下的磁滞回线显示纳米Fe颗粒具有超顺磁性. Fe离子注入ZnO的磁性源于第二相α-Fe和γ-Fe. 关键词： 离子注入 ZnO 同步辐射X射线衍射 超顺磁性     

Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films

The effects of internal stresses and depolarization fields on the properties of epitaxial ferroelectric perovskite thin films are discussed by employing the dynamic Ginzburg-Landau equation (DGLE). The numerical solution for BaTiO₃ film shows that internal stress and the depolarization field have the most effects on ferroelectric properties such as polarization, Curie temperature and susceptibility. With the increase of the thickness of the film, the polarization of epitaxial ferroelectric thin film is enhanced rapidly under high internal compressively stress. With the thickness exceeding the critical thickness for dislocation formation, the polarization increases slowly and even weakens due to relaxed internal stresses and a weak electrical boundary condition. This indicates that the effects of mechanical and electrical boundary conditions both diminish for ferroelectric thick films. Consequently, our thermodynamic method is a full scale model that can predict the properties of ferroelectric perovskite films in a wide range of film thickness.     

Dissipation of a two-mode squeezed vacuum state in the single-mode amplitude damping channel

We explore how a two-mode squeezed vacuum state sechθ e^{a+b+ tanh θ} |00> evolves when it undergoes a singlemode amplitude dissipative channel with rate of decay κ. We find that in this process not only the squeezing parameter decreases, tanh θ → e^-κt tanh θ, but also the second-mode vacuum state evolves into a chaotic state exp{b⁺bln[1 - e^-2κt tanh² θ]}. The outcome state is no more a pure state, but an entangled mixed state.     

Surface modification of polytetrafluoroethylene film using single liquid electrode atmospheric- pressure glow discharge

Polytetrafluoroethylene films are treated by room temperature helium atmospheric pressure plasma plumes, which are generated with a home-made single liquid electrode plasma device. After plasma treatment, the water contact angle of polytetrafluoroethylene film drops from 114°to 46°and the surface free energy increases from 22.0 mJ/m2 to 59.1 mJ/m2. The optical emission spectrum indicates that there are reactive species such as O2+ , O and He in the plasma plume. After plasma treatment, a highly crosslinking structure is formed on the film surface and the oxygen element is incorporated into the film surface in the forms of -C-O-C-, -C=O, and -O-C=O groups. Over a period of 10 days, the contact angle of the treated film is recovered by only about 10 , which indicates that the plasma surface modification is stable with time.     

Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime, carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.