Preparation and electrical conductivity of polypyrrole/WS2 layered nanocomposites

Lithium intercalated tungsten disulfide Li(x)WS(2) with x>1 was solvothermally obtained. It was revealed that Li(x)WS(2) can remain mostly unchanged under vacuum (about 4 kPa) for 5 days. The pH dependences of surface zeta potential for single molecular layers of WS(2) were determined, illustrating that its isoeletric point is approximately at pH 3. The polypyrrole/WS(2) layered nanocomposites were prepared via the combination of the exfoliation-restacking technique and in situ oxidative polymerization. The intercalation of PPy into the host galleries resulted in an interlayer expansion of about 3.7 A, which suggested that the intercalated polymeric chains are in a monolayer arrangement with the pyrrole rings lying parallel to the WS(2) host layers. The resulting material shows good thermal stability with the decomposition of the interacted chains within the disulfide galleries occurring at around 400 degrees C. The electrical conductivity of PPy/WS(2) nanocomposite was found to be high in the order of 10(-2) S cm(-1) at ambient temperature.     

利用OMA谱仪测量飞秒激光的谐波光谱

本文给出了利用光学多道分析(OMA)谱仪测量飞秒激光谐波光谱的一种方法 .该方法是利用OMA谱仪(谱分辨0.1nm)加CCD(1152×1242)相机探测设备,用消色差的相机镜头作为空间分辨,在固体靶前表面测量了激光的二次谐波(2ω_0)光谱.结果显示:在平行于靶面的方向和接近于法线方向分别观测到了2ω_0光谱,但在接近于法线方向的谐波光谱出现了精细结构,并得到2ω_0谐波谱的分裂间隔约为3.183 nm.分析认为,自生磁场的产生和作用是导致二次谐波光谱精细结构及谐波谱分裂的主要原因.     

Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Off Techniques

Ultra-violet （KrF excimer laser,λ =248 nm） laser lift-off （LLO） techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-off （UV-LLO） has been characterized by micro-Raman spectroscopy, miero-photoluminescence, along with high-resolution transmission electron microscopy （HRTEM）. HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagona/GaN. The half-loop-clusterlike UV-LLO interface indicates that the LLO-indueed shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface.     

Entropy correction to stationary black hole via fermions tunneling beyond semiclassical approximation

Recently, fermions tunneling beyond semiclassical approximation from an uncharged static black hole was investigated by Majhi, which was based on the work of Banerjee and Majhi, it was found that the black hole entropy correction can be produced as the quantum effect of a particle is taken into account. In this paper, we further extend this idea to the stationary Kerr black hole to discuss its entropy correction. To get the corrections correctly, the proportionality parameters of quantum corrections of action I _i to the semiclassical action I ₀ in this case are regarded as the inverse of the product of Planck Length and Planck Mass. The result shows that entropy corrections to the stationary black hole also include the logarithmic term and inverse area term in Bekenstein–Hawking entropy beyond semiclassical approximation.     

超热电子输运背向光辐射的实验研究

在100TW掺钛蓝宝石飞秒激光器上利用光学CCD相机和光学多道分析仪,分别在靶背法线方向测量了超热电子光辐射的空间分布和光谱.测量结果显示：光辐射空间分布图案呈圆环状,而辐射区域有发散角和光强分布,且包含多种辐射成分.光辐射光谱在800nm附近出现尖峰,是激光的基频(ω₀)波,这一现象归因于超热电子束在输运的过程中产生的微束团而引起的相干渡越辐射(CTR).随着激光能量的增加,CTR光谱峰向红光方向移动,基频波红移的主要原因是由于等离子体临界面的迅速膨胀.如果考虑超热电 关键词： 超热电子 光辐射 共振吸收 红移     

类铍离子磁四极M2 2s2 1S0-2s2p 3 P2(Z=10-103)禁戒跃迁

利用全相对论多组态:Dirac-Fock方法系统地计算了高离化类铍离子的磁四极M2 2s2 1S0-2s2p3P2 (Z=10-103)自旋禁戒跃迁的能级间隔、跃迁概率和振子强度,计算中考虑了重要核的有限体积效应,Breit修正和QED修正,所得结果和最近的实验数据以及理论值进行了比较,结果表明:高原子序数的高电荷离子(Z≥70)磁四极M2自旋禁戒跃迁几乎可以和中性原子的光学允许跃迁相比拟,不仅在天体等离子体中,在ICF和MCF高温激光等离子体中,磁四极自旋禁戒跃迁和其他自旋禁戒跃迁(磁偶极、电四极)一样不容忽视,在双电子复合、不透明度、自由程等理论计算中应该考虑其影响.     

介观耗散电容耦合电路量子化中的正则变换

针对介观耗散电容耦合RLC电路提出一种一般的正则变换, 并证明了其正确性和合理性. 用这种正则变换研究了双回路介观耗散电容耦合电路的量子化问题, 得出的对角化哈密顿量比文献中多出一非线性项. 这种具有普遍性的一般正则变换可能对研究介观多回路耗散系统的量子涨落、量子噪声等性质具有重要的意义. 关键词： RLC电路')" href="#">RLC电路 量子化 正则变换     

Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well （MQW） ultraviolet light-emltting diodes （UV-LEDs） at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.     

利用渡越辐射研究超热电子在固体靶中的输运过程

为了探索超热电子的输运过程，在100 TW掺钛蓝宝石飞秒激光器上利用光学CCD相机和OMA光学多道分析仪，分别在靶背表面法线方向测量了光发射空间分布图案和光谱. 实验测量结果显示，光发射空间分布图案呈圆盘状，在圆盘中明亮而强的光信号呈局部化分布，该现象表明，超热电子在输运的过程中存在成丝效应，引起严重的不稳定性；光发射光谱在3倍频和3/2倍频附近出现尖峰，分别是3次谐波和3/2次谐波，这一现象归因于超热电子束在传输的过程中产生的微束团而引起的相干渡越辐射(CTR)；光发射光强随靶厚度的增加而减小. 关键词： 超热电子 相干渡越辐射 输运 不稳定性     

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AIGaN Schottky Contacts

Al0.2 Ga0.8N/GaN samples are grown by metalorganic chemical vapour deposition （MOCVD） method on （0001） sapphire substrates. A 10nm-thick Ni layer is deposited on AlGaN as the transparent Schottky contact. The effect of postannealing in oxygen ambient on the electrical properties of Ni/AlGaN is studied by current-voltage- temperature （I-V-T） measurement. The annealing at a relatively low temperature of 300℃ for 90 s results in a decrease of the ideality factor from 2.03 to 1.30 and an increase of the Schottky barrier height from 0.77eV to 0.954 e V. The I-V-T analysis confirms the improvement originated from the formation of NiO, a layer with higher resistance, which could passivate the surface states of AlGaN and suppress the tunnelling current. Furthermore, the annealing also leads to an increase of the transmittance of the contacts from 57.5% to 78.2%, which would be favourable for A1GaN-based photodetectors.