加磁场对GZO薄膜结构及光电性能的影响

采用射频磁控溅射法在玻璃基底上制备了Ga掺杂ZnO (GZO)薄膜,在传统磁控溅射系统中引入外加磁场,探究了磁场强度变化对GZO薄膜晶体结构和光电性能的影响.结果表明:所制得的GZO薄膜结构均为六角纤锌结构且在[002]方向沿C轴择优取向;外加磁场强度对薄膜的光电性能具有较大影响,在可见光范围内,薄膜的平均透光率超过93;,并出现了Moss-Burstein效应;薄膜的电学性能得到提升,其电阻率从4.96×10-3 Ω·cm降至3.17×10-4Ω·cm,霍尔迁移率从7.36cm2 ·V-1 ·S-1增至9.53 cm2·V-1·S-1.     

Depth Distribution of Residual Fluorine in a Polyvinylidene Fluoride Film under Electron Bombardment

The influence of the initial energy of electrons on the kinetics of the defluorination of the surface of a polyvinylidene fluoride film (PVDF) under electron bombardment is studied. The kinetic equation of the third order describes this process for any electron energy. The minimum possible fluorine content in the near-surface layer of the PVDF film exposed to long-duration bombardment is determined. The depth of penetration of electrons into the sample, i.e. the free path of bombarding electrons with different initial energies, is calculated. The nonmonotonic depth distribution of residual fluorine in the film, which to a great extent depends on the electron energy, is revealed.     

Evaluation of Cross Section of <Superscript>10</Superscript>Be Radioactive Nuclei Production at Deuteron Interaction with <Superscript>9</Superscript>Be

The demand for more precise nuclear data on beryllium interactions is growing along with the development of controlled fusion facilities, where beryllium is already used or is planned to be used as a structural material in the coating of the first inner wall of the tokamak (the tritium breeding blanket). Evaluated cross sections of the ⁹Be(d, x)¹⁰Be_gs reaction at deuteron energies ranging from 0 to 22 MeV are presented. All available experimental data and the mathematical tools of the SaBa [1] electronic library developed at the Russian Federal Nuclear Center All-Russian Research Institute of Experimental Physics are used to obtain these cross sections.     

Evaluated Integral Cross Sections of the <Superscript>3</Superscript>H(<Emphasis Type="Italic">t</Emphasis>,2<Emphasis Type="Italic">n</Emphasis>)<Superscript>4</Superscript>He Reaction in the Low-Energy Region Obtained with Regard to Electron Screening

procedure is considered for analyzing ³H(t,2n)⁴He reaction proceeding in a gas environment with regard to electron screening [1–4]. Results from such an analysis are presented. An electron screening potential of 121 eV is obtained. The magnitude of this potential is three times higher than the one given in [5]. Starting with a 100 eV energy of particle interaction the cross sections of ³H(t,2n)⁴He reaction are calculated using the above potential. The reaction rates are calculated using the evaluated cross sections in the lowenergy region. Enhancement factors for cross sections and reaction rates are defined.     

采用可见光源和分划板快速装调激光光路

 分析了激光测量光路的特点和装校要求,给出了采用可见光源、分划板装校激光光路的原理。以预放测量模块为例,介绍了装校的流程及装校中的注意事项,分析了装校所能达到的精度,并用内调焦望远镜进行了装校精度检查。结果表明,采用可见光源、分划板装校的激光光路透镜光轴正过心的偏心极限误差小于等于0.07 mm,光轴倾斜极限误差小于等于25″。     

利用浅海声场干涉条纹反演海底参数方法研究

浅海频散特性导致声场在距离-频率平面形成干涉条纹,该干涉条纹蕴含着声源以及海底信息。本文通过降噪、滤波等方法,提取船舶辐射噪声干涉条纹中距离域干涉准周期、波导不变量以及去扩展衰减系数(不考虑扩展损失后接收到噪声级随距离的衰减程度)三种特征量的观测值,基于无限均匀沉积层海底模型,采用简正波计算程序理论计算上述三种特征量作为拷贝,提出一种以模拟退火法作为搜索寻优策略的新的匹配反演海底参数的方法。海试数据处理结果表明,该方法反演估计所得海底密度、声速、衰减系数三参数用于浅海负跃层条件下的声场预报效果比较良好。     

Cs4Sn5S12的溶剂热合成与表征

利用溶剂热法合成了硫代锡酸铯Cs4Sn5S12,单晶X-射线衍射结果表明Cs4Sn5S12属正交晶系,Pbca空间群,a=1.4232(4)nm,b=1.3161(4)nm,c=1.6372(5)nm,α=90°,Z=4。化合物Cs4Sn5S12中含有由八面体Sn S6和三角双锥Sn S5连接形成的层状阴离子[Sn5S12]4-∞。[Sn5S12]4-∞结构中有两种类型硫原子:连接六配位锡原子和五配位锡原子的硫原子以及只与两个五配位锡原子相连的硫原子。紫外-可见漫反射光谱表明Cs4Sn5S12为半导体,禁带宽度为2.3 e V。     

聚呲咯的研究

本文研究了不同电化学氧化聚合条件下所得聚吡咯的红外光谱,X射线光电子能谱、元素分析、X射线衍射图及扫描电子显微镜图等。对聚吡咯的电导性、电导率的依赖性、化学结构及结晶性等进行了讨论。     

高效液相色谱二氮杂冠醚键合相的合成及性能研究

本文报道在硅胶表面进行固－液相反应，合成硅胶键合二氮杂冠醚高效液相色谱固定相。采用有机元素分析、热分析、红外光谱、金属离子的络合容量测定等对键合材料进行鉴定和表征，并对其色谱性能进行了研究。     

New Phases in the Lithiumnitridovanadate System — The Solid Solution Li7‐2xMgx[VN4] with 0 ≤ x ≤ 1

Solid solution phases Li_7‐2xMg_x[VN₄] (0 < x ≤ 1) with varying Mg‐content are obtained as yellow microcrystalline powders from heat treatment of mixtures of VN, Li₃N and Mg₃N₂ or from mixtures of Li₇[VN₄] and Mg₃N₂ at 1370 K in N₂ atmosphere at ambient pressure. At substitution parameter values of x > 0.5 a subsequent distortion from the ideal cubic unit cell to an orthorhombic unit cell is observed. The crystal structure of Li_7‐2xMg_x[VN₄] with x ≈ 1 was refined from neutron and X‐ray powder diffraction data (space group Pbca, No. 61, a = 963.03(3) pm, b = 958.44(3) pm, c = 951.93(2) pm, neutron pattern 14° — 156° 2θ, step non‐linear ≈ 0.0782° 2θ, No. of measured points 1816, R_p = 0.089, R_wp = 0.115, R_Bragg = 0.155, R_F = 0.114; X‐ray pattern 10° — 98° 2θ, step 0.005° 2θ, No. of measured points 17600, R_p = 0.028, R_wp = 0.045, R_Bragg = 0.113, R_F = 0.133, structure variables: 45). The crystal structure resembles a Li₂O type superstructure with the atomic arrangement of β‐Li₇[VN₄] and with two crystallographic Li‐sites each substituted by Mg with statistical occupation factors of 0.5. Chemical analyses prove the composition and XAS spectroscopy at the V K‐edge support the +5 oxidation state assignment for vanadium. XAS data also support the tetrahedral coordination of vanadium by N as indicated by the structure refinements.