Controlled quantum state sharing of arbitrary two-qubit states with five-qubit cluster states

In this paper, we propose a controlled quantum state sharing scheme to share an arbitrary two-qubit state using a five-qubit cluster state and the Bell state measurement. In this scheme, the five-qubit cluster state is shared by a sender (Alice), a controller (Charlie), and a receiver (Bob), and the sender only needs to perform the Bell-state measurements on her particles during the quantum state sharing process, the controller performs a single-qubit projective measurement on his particles, then the receiver can reconstruct the arbitrary two-qubit state by performing some appropriate unitary transformations on his particles after he has known the measured results of the sender and the controller.     

Molecular dynamics study of mechanical properties of carbon nanotube-embedded gold composites

The mechanical properties of nano-single crystal gold and carbon nanotube-embedded gold (CNT/Au) composites under axial tension were investigated using molecular dynamics (MD) simulation method. The interactions between atoms were modeled using the many-body tight-binding (TB) potential and the empirical Tersoff potential coupled with the Lennard-Jones (L-J) potential. We get the yield strain and the yield stress of nano-single crystal gold 0.092, 5.74 GPa, respectively. The computational results show that the increase in Young's modulus of the long CNT-embedded gold composite over pure gold is much large. From the simulation, we also find that the yield stress and the yield strain of short CNT-embedded gold composite are evidently less than that of the nano-single crystal gold.     

Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various temperatures

Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 °C for the B-doped films, while it is around 700-800 °C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm⁻¹ for P- and B-doped sample after 1000 °C annealing.     

Controlled Remote State Preparation of an Arbitrary Two-Qubit State by Using Two Sets of Four-Qubit GHZ States

Recently, Huang and Zhao (Int. J. Theor. Phys. 56, 678, 2017) proposed a new scheme for controlled remote state preparation of an arbitrary two-qubit state by using two sets of three-qubit GHZ states as the quantum channel. In the scheme, Alice and Bob choose four different kinds of two-qubit projective measurement bases to measure their local qubits, respectively. We demonstrate that two sets of four-qubit GHZ states can be used to realize the deterministic controlled remote state preparation of an arbitrary two-qubit state by performing only two-qubit projective measurements.     

非简谐振动和形变对ZnSe类石墨烯德拜温度热容量以及极性的影响

应用哈里森(Harrison)键联轨道法和固体物理理论和方法,考虑到原子的高阶非简谐振动,计算了ZnSe类石墨烯化合物的σ键和π键的极性、简谐系数和非简谐系数,得到它的德拜温度和定容热容量随温度变化的解析式以及形变引起的极性参量的改变量,探讨了形变对ZnSe类石墨烯极性的影响,并讨论了原子非简谐振动对化合物热力学性质的影响,结果表明:在300 K到1600 K温度区间内,简谐近似下,ZnSe的德拜温度为常量,热容量随着温度的升高呈非线性增大,其中温度较低时变化较快,温度较高时变化较慢并随着温度的升高而趋于常量.考虑到非简谐项后,德拜温度随着温度升高而增大,几乎为正比关系,而热容量的值比简谐近似的值有所减小,与第一非简谐项的影响相比,第二非简谐项的影响很小.形变对ZnSe类石墨烯的极性有重要的影响,在它的几种形变中,剪切形变对σ键的极性的影响最大,而键长形变对π键的极性的影响最小.温度愈高,非简谐效应愈显著.     

Optical properties of methane to 288 GPa at 300 K

Optical properties of solid methane (CH₄) were studied at high pressure and room temperature using a diamond anvil cell. Reflectivity and transmission measurements were used to measure the refractive index to 288 GPa. Fabry-Perot interferometery was used to measure the sample thickness to 172 GPa. This data was fitted to the derived expression of thickness vs. pressure that was then used to calculate the thickness to 288 GPa. This in turn was combined with optical absorption experiments to obtain the absorption coefficient and hence the extinction coefficient k^*. From combined reflection and absorption experiments the refractive index n=n_s+ik^* was obtained. The index of refraction and the ratio of molar refraction to molar volume showed a large increase between 208 and 288 GPa. This behavior indicated that a phase transformation of insulator-semiconductor might have occurred in solid CH₄ by 288 GPa.     

Numerical Modeling on Heat Transport Across Stochastic Magnetic Field

The heat diffusion across the stochastic magnetic field is studied numerically. The stochastic field is generated by the overlap of two magnetic islands. The parameter w/w_c, is found tobe an important parameter in charactering the transport, where w is the magnetic island width, and w_c is the critical island width for flattening the electron temperature across an island. For w/w_c < 1, the enhanced radial heat diffusivity χ_r is proportional to the parallel heat diffusivity χ_∥, and the heat transport is dominated by the additive effect of individual islands. For w/w_c > 3, χ_r is also proportional to χ_∥ and the additional degradation of the energy confinement due to stochastic magnetic field becomes apparent. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

三维介观超导环涡旋态的研究

通过数值求解非线性金兹堡-朗道(G-L)方程组,研究了三维介观超导环中的涡旋态。发现了在细环中只能存在巨涡旋态,以及存在顺磁、抗磁迈斯纳效应和间隙性超导现象。在粗环中,发现了多涡旋态和巨涡旋态共存的混合态。相应讨论有助于理解介观超导环中涡旋态相变。     

碳酸盐岩储层流体包裹体差分拉曼光谱的研究

拉曼微探针分析法对单个气液包裹体的化学成分和相态的无破坏性测量来说,目前几乎是唯一最好的方法.但是由于众多因素的影响,特别是主矿物具有较强荧光时,提高信噪比的问题急待解决.本工作对碳酸盐岩储层包裹体样品制成的薄片进行了显微观察、荧光测试及拉曼分析,并进行了空间上横向XY扫描、纵向上深度剖析(Z扫描)和冷热台上变温的流体包裹体筹分拉曼光谱测量方法的研究.结果表明,所得到的差谱揭示了包裹体更真实的光谱曲线,消除了主矿物对包裹体的干扰,以较高的信噪比显现出包裹体中流体(-170℃温度下的冰)位于位移波数3 098 cm-1附近的宽拉曼散射峰,明显的改善了信噪比.     

Semiconductor SERS on Colourful Substrates with Fabry-Pérot Cavities

Non-metallic materials have emerged as a new family of active substrates for surface-enhanced Raman scattering (SERS), with unique advantages over their metal counterparts. However, owing to their inefficient interaction with the incident wavelength, the Raman enhancement achieved with non-metallic materials is considerably lower with respect to the metallic ones. Herein, we propose colourful semiconductor-based SERS substrates for the first time by utilizing a Fabry-Pérot cavity, which realize a large freedom in manipulating light. Owing to the delicate adjustment of the absorption in terms of both frequency and intensity, resonant absorption can be achieved with a variety of non-metal SERS substrates, with the sensitivity further enhanced by ≈100 times. As a typical example, by introducing a Fabry-Pérot-type substrate fabricated with SiO₂/Si, a rather low detection limit of 10⁻¹⁶ M for the SARS-CoV-2S protein is achieved on SnS₂. This study provides a realistic strategy for increasing SERS sensitivity when semiconductors are employed as SERS substrates.