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991.
透射光栅广泛应用于软X射线能谱测量.为了获得用于惯性约束聚变研究的透射光栅的各级衍射效率及其他参数,在北京同步辐射源上200—1600 eV能量范围内对其进行了标定,获得了透射光栅衍射效率的实验结果.扩展了透射光栅衍射效率的计算方法,提出了7边准梯形截面衍射效率计算模型.分析拟合了实验数据,理论结果与实验结果很好符合.得到了7边准梯形的透射光栅栅线截面结构.
关键词:
透射光栅
衍射效率
实验标定
光栅模型 相似文献
992.
Huan
Zheng Guangwei Yuan Xia Cui 《Numerical Methods for Partial Differential Equations》2020,36(6):1845-1867
A fully implicit finite difference (FIFD) scheme with second-order space–time accuracy is studied for a nonlinear diffusion equation with general capacity term. A new reasoning procedure is introduced to overcome difficulties caused by the nonlinearity of the capacity term and the diffusion operator in the theoretical analysis. The existence of the FIFD solution is investigated at first which plays an important role in the analysis. It is established by choosing a new test function to bound the solution and its temporal and spatial difference quotients in suitable norms in the fixed point arguments, which is different from the traditional way. Based on these bounds, other fundamental properties of the scheme are rigorously analyzed consequently. It shows that the scheme is uniquely solvable, unconditionally stable, and convergent with second-order space–time accuracy in L∞(L2) and L∞(H1) norms. The theoretical analysis adapts to both one- and multidimensional problems, and can be extended to schemes with first-order time accuracy. Numerical tests are provided to verify the theoretical results and highlight the high accuracy of the second-order space–time accurate scheme. The reasoning techniques can be extended to a broad family of discrete schemes for nonlinear problems with capacity terms. 相似文献
993.
Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum. 相似文献
994.
The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 下载免费PDF全文
In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density. 相似文献
995.
996.
采用Anderson模型哈密顿量和非平衡态格林函数方法对量子点环以不同构型嵌入A-B干涉器中电子输运的退耦合态及反共振现象进行了理论研究. 结果表明,量子点环A-B干涉器的结构对称性以及穿过A-B干涉器的磁通量是诱发退耦合现象的两种物理机理. 耦合量子点结构的对称性越高,体系在相干电子输运过程中表现出来的退耦合及反共振现象越明显. 而且在具有高度对称性的耦合量子点结构中,通过磁场调节体系的结构参数可以分别使第奇数或第偶数分子本征态从电极上退耦合,从而使电子输运电导表现出奇偶对等振荡现象. 这为设计纳米电子开关器件提供了一个新的物理模型.
关键词:
量子点环
A-B干涉器
退耦合
反共振 相似文献
997.
运用时域有限差分方法,研究了光栅减反层结构对太阳能电池光电转换效率及储能效果的影响.具体从光栅形状、高度以及光栅表面金属薄膜厚度出发.结果表明经光栅减反层优化表面结构的太阳能电池的光电转换效率显著增大,储能效果大大得到提升.尤其是三角形光栅太阳能电池.随着镀层厚度的增加,储能效果增加,但当薄膜厚度过厚时,储能效果反而降低. 相似文献
998.
999.
对不同产地和批次的13个生磁石样品的红外光谱法进行分析,建立磁石的红外光谱指纹图谱,并将炮制品和生品进行分析比较.发现所有生磁石样品指纹图谱的相似度均大于0.97;磁石炮制后相似度和相关系数均降低.傅里叶变换红外光谱指纹图谱可用于商品磁石的分析与品质评价. 相似文献
1000.
Cooley LD Zambano AJ Moodenbaugh AR Klie RF Zheng JC Zhu Y 《Physical review letters》2005,95(26):267002
Electron energy-loss spectroscopy (EELS) was combined with heat capacity measurements to probe changes of electronic structure and superconductivity in Mg(1-x)Al(x)B(2). A simultaneous decrease of EELS intensity from sigma-band hole states and the magnitude of the sigma gap was observed with increasing x, thus verifying that band filling results in the loss of strong superconductivity. These quantities extrapolated to zero at x approximately 0.33 as inferred from the unit cell volume. However, superconductivity was not quenched completely, but persisted with T(c) < 7 K up to about x approximately 55. Only the pi band had detectable density of states for 0.33 < or =x < or = 0.55, implying an inversion of the two-band hierarchy of MgB(2) in that regime. Since pi-band superconductivity is active in other materials such as intercalated graphite, implications for new materials with high T(c) are discussed. 相似文献