Improvement of high-frequency properties of Co_2FeSi Heusler films by ultrathin Ru underlayer

Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm.It is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient remains.The result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external damping.As a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.     

Heat conductivity and Dufour effect in the weakly ionized,magnetized, and kappa-distributed plasma

By using the generalized Boltzmann equation of transport and the first-order approximation of Chapman-Enskog expansion on the κ-distribution function, we study the thermal conductivity and Dufour effect in the weakly ionized and magnetized plasma. We show that the thermal conductivity and Dufour coefficient in the κ-distributed plasma are significantly different from those in the Maxwell-distributed plasma, and the transverse thermal conductivity and Dufour coefficient in the κ-distributed plasma are generally greater than those in the Maxwell-distributed plasma, and the Righi-Leduc coefficient and Hall Dufour coefficient in the κ-distributed plasma are also generally greater than those in the Maxwell-distributed plasma.     

关于控制算子的若干注记

Let B(H) be the set of all bounded linear operators on a Hilbert space H. An operator T∈B(H) is called dominant if (T-λ)(T-λ)^*≤M_λ²(T-λ)^*(T-λ),?λ∈C.The numerical range of T is difined by W (T) = {(Tx, x): ‖x‖ = 1, x∈H}. In Section 1 some new characteristic of dominant operators are given. If C = AB - BA, we prove that O∈W(C)^- then A is a dominart or φ-quasihy ponor-mal. In Section 2 we prove that O∈σ_e(△_A^σ) if A is a dominant, where(?), we also prove that if A∈B(H) is a norm attaining Ф-quasihyponormal, then A has a non-trivial invariant subspace. In Section 3 we discuss the closeness of the range of bounded linear operator F_AB:X→AX-XB, and prove that R(δ_A)∩{A}′∩{Aⁿ}′=0, where δ_A:X→AX-XA.     

Atmospheric oxidation chemistry of 1–methoxy 2–propyl acetate initiated by OH radicals: kinetics and mechanisms

Kinetics and mechanism of the gas-phase reaction of CH₃C(O)OCH(CH₃)CH₂OCH₃ (MPA) with OH radicals in the presence of O₂ and NO have been investigated theoretically by performing a high and reliable level of theory, viz., CCSD(T)/6-311?+?G(d,p)//BH&HLYP/6-311++G(d,p)?+?0.9335×ZPE. The calculations predict that the H-abstraction from the ?CH₂?O? position of MPA is the most facile channel, which leads to the formation of the corresponding alkoxy radicals CH₃C(O)OCH(CH₃)C(O ?)HOCH₃ under atmospheric conditions. This activated radicals CH₃C(O)OCH(CH₃)C(O ?)HOCH₃ will undergo further rearrangement, fragmentation and oxidative reactions and predominantly leads to the formation of various products (methyl formate HC(O)OCH₃ and acetic anhydride CH₃C(O)OC(O)CH₃). In the presence of water, acetic anhydride can convert into acetic acid CH₃C(O)OH via the hydrolysis reaction. The calculated total rate constants over the temperature range 263–372?K are used to derive a negative activation energy (E_a= ?5.88 kJ/mol) and an pre-exponential factor (A?=?1.78×10^?12 cm³ molecule^?1 s^?1). The obtained Arrhenius parameters presented here are in strong agreement with the experimental values. Moreover, the temperature dependence of the total rate constant over a temperature range of 263?1000?K can be described by k?=?5.60 × 10^?14×(T/298?K)^3.4×exp(1725.7?K/T) cm³ molecule^?1 s^?1.     

Synthesis of bandpass grid filter for linear polarized millimeter wave

A method based on equivalent circuit and transmission line model is proposed to design narrow bandpass grid filters in short millimeter wave. Several bandpass filters with 2, 3 or 4 element inductive wire grids in the 70GHz region have been designed with Butterworth or Chebyshev characteristic for linear polarized wave. The agreement between measurement and design theory is good and this proves the rationality and practicality of our design theory.     

新型稀磁半导体Fe掺杂LiZnP的光电性质

采用基于密度泛函理论的第一性原理计算法研究了新型稀磁半导体Li_(1±)_y(Zn_(1-)_xFe_x)P (x=0, 0.0625;y=0, 0.0625)的电子结构、磁性及光学性质.结果表明,Fe的掺入使体系产生自旋极化杂质带,Fe的3d态与Li2s态,Zn4s态以及P3p态的态密度峰在费米能级处出现重叠,产生sp-d轨道杂化,此时体系净磁矩最大,材料表现出金属性,导电性增强.当Li空位时,导电性减弱,但杂质带宽度最大,居里温度最高.而Li填隙时,体系形成能最低,材料变为半金属性,表现为100%自旋注入,表明掺杂体系的磁性和电性可以分别通过Fe的掺入和Li的含量进行调控.对比光学性质发现,Li空位时,在介电函数虚部和复折射率函数的低能区出现新峰,扩大了对低频电磁波的吸收范围.能量损失函数表明掺杂体系具有明显的蓝移效应,且Li填隙时有更强的等离子共振频率.     

Mg2Sn电子结构及热力学性质的第一性原理计算

采用基于第一性原理的赝势平面波方法系统地计算了Mg₂Sn基态的电子结构、弹性常数和热力学性质.计算结果表明Mg₂Sn的禁带宽度为0.1198eV.运用线性响应方法确定了声子色散关系和态密度,得出Mg₂Sn的热力学性质如等容比热和德拜温度.计算Mg₂Sn的热导率并与实验数据相比较. 关键词： 第一性原理 电子结构 弹性常数 热力学性质     

Semiconductor optical amplifier used as regenerator for degraded differential phase-shift keying signals

Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication systems.This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals.The key regeneration mechanism is theoretically analysed.The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Gbit/s differential phase-shift keying 1080-km transmission systems.The results show that regeneration effects are very well.Bit error rate is less than 10 12 with the regenerator.     

Photoemission of graded-doping GaN photocathode

We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.