Angular Distribution of Synchrotron Radiation in Low Frequency

The angular distribution of energy for synchrotron radiation in low frequency band （ω 〈〈 we） is obtained by rigorously solving the Nicolo Tartaglia equation. The result shows that the critical angle increases with decreasing frequency, but it cannot exceed 90°. The relation between critical angle θc. and frequency is common covering all wavelengths. For the small angle case, it is consistent with the result obtained by Jackson. With the increase of emanative angle, the radiant intensity increases first, then decays.     

Bright Red Organic Electroluminescent Devices Based on a Soluble Rare Earth Complex Eu(TTA)_3 Phen

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集值映射的 RS集逼近

本文研究了取值为 Banach空间中子集的上半连续的集值映射的 RS集逼近问题 ,给出了集值映 射用 RS集逼近的特征和唯一性结果 ,从而推广了他人的结果 .     

改进的遥感图像多种信息熵阈值分割算法

给出了一种新的图像信息量的表述方法,提出了五种基于信息熵的科学分割遥感图像的改进方法。用MATLAB对这些算法进行了实验仿真,并进行了算法性能优化。得出了各种不同算法的最佳阈值和耗时,并对它们进行了比较和分析。实验数据表明,新算法较以往的算法在分割效果和速度上都有明显的改善和提高。     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Noncontinuous Solitary Wave Solutions for Double sine-Gordon Equation

Using the tanh method and a variable separated ordinary difference equation method to solve the double sineGordon equation, we derive some new exact travelling wave solutions, especially a new type of noncontinuous solitary wave solutions. These noncontinuous solitary wave solutions are verified by using the conservation law theory.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Gain Measurement and Anomalous Decrease of Peak Gain at Long Wavelength for InAs/GaAs Quantum-Dot Lasers

Mode gain spectrum is measured by the Fourier series expansion method for InAs/GaAs quantum-dot （QD） lasers with seven stacks of QDs at different injection currents. Gain spectra with distinctive peaks are observed at the short and long wavelengths of about 1210nm and 1300nm. For a QD laser with the cavity length of 1060μm, the peak gain of the long wavelength first increases slowly or even decreases with the injection current as the peak gain of the short wavelength increases quickly, and finally increases quickly before approaching the saturated values as the injection current further increases.     

基于多孔径闪烁的湍流强度廓线反演方法研究

以多孔径闪烁方法的理论为基础,分别讨论了孔径滤波函数和光谱响应函数对权重函数的影响.根据包括边界层项的Hufnagel-Valley 5/7模型得到的闪烁指数,采用奇异值分解法反演了垂直方向的湍流强度廓线,结果的量级介于10~(-15)~10~(-17)之间,并随高度的增加不断减小,在量级和趋势上与理论模型基本一致;同时结合Shack-Hartman的实际测量结果,反演了水平方向1 km传输路径上的湍流强度分布状况.水平方向反演结果的量级在10~(-14)~10~(-15)之间,随传播距离的变化趋势与实验场地的实际情况较为符合,随时间的变化趋势与合肥地区同期的统计结果基本一致.