基于迈克耳逊干涉仪的空间调制型干涉成像光谱仪

试制了一台基于迈克耳逊干涉仪的空间调制型干涉成像光谱仪原理样机。样机将迈克耳逊干涉仪光路中的一面反射镜偏转一个小角度,使经两平面镜反射后的两束光波面之间产生一维连续的光程差,在图像传感器的像面上形成空间调制干涉条纹,构成空间调制型干涉成像光谱仪。一系列原理验证性实验表明:光谱仪原理正确可行,实验结果与理论相符,并且具有高通量,高信噪比,大视场和体积小,重量轻的优点。     

吲哚化合物绿色高效的硫氰酸化反应

本文报道了在温和绿色的条件下,以过氧化氢(H₂O₂)作为氧化剂,进行吲哚化合物区域选择性硫氰酸化反应。结果表明：该反应体系中,无论是氮取代吲哚还是游离氨基吲哚均可获得较高的产率。产物2a～2o的结构经¹H NMR和¹³C NMR表征。该方法的主要特点是反应条件温和,反应时间短,产率高。     

具多偏差变元的n-维p-Laplacian方程周期解的存在性

研究了一类具多偏差变元的n-维p-Laplacian方程周期解的存在性,利用迭合度理论得到了存在周期解的新条件.     

Determination of Pesticide Ethion by Linear Sweep Stripping Voltammetry

IntroductionOrganophosphorus pesticides( OPPs) are widelyused in agriculture as insecticides, but they are foundto contaminate agricultural products such as fruits andvegetables to variable extents. Because of their toxicproperties[1,2]and the potential r…     

聚焦2010年度《分析化学》微流控芯片分析发展和应用

对《分析化学》2010年度有关微流控芯片分析技术作了分类,评述了各种分析技术的特点与应用情况,并与国外μTAS发展的整体趋势进行了对比.     

Angular Distribution of Synchrotron Radiation in Low Frequency

The angular distribution of energy for synchrotron radiation in low frequency band （ω 〈〈 we） is obtained by rigorously solving the Nicolo Tartaglia equation. The result shows that the critical angle increases with decreasing frequency, but it cannot exceed 90°. The relation between critical angle θc. and frequency is common covering all wavelengths. For the small angle case, it is consistent with the result obtained by Jackson. With the increase of emanative angle, the radiant intensity increases first, then decays.     

Bright Red Organic Electroluminescent Devices Based on a Soluble Rare Earth Complex Eu(TTA)_3 Phen

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集值映射的 RS集逼近

本文研究了取值为 Banach空间中子集的上半连续的集值映射的 RS集逼近问题 ,给出了集值映 射用 RS集逼近的特征和唯一性结果 ,从而推广了他人的结果 .     

改进的遥感图像多种信息熵阈值分割算法

给出了一种新的图像信息量的表述方法,提出了五种基于信息熵的科学分割遥感图像的改进方法。用MATLAB对这些算法进行了实验仿真,并进行了算法性能优化。得出了各种不同算法的最佳阈值和耗时,并对它们进行了比较和分析。实验数据表明,新算法较以往的算法在分割效果和速度上都有明显的改善和提高。     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.